Properties of Schottky Barrier Diodes on (InxGa1–x)2O3 for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach

H. von Wenckstern, D. Splith, A. Werner, S. Müller, M. Lorenz and M. Grundmann

ACS Comb. Sci., 2015, 17, 710
DOI: 10.1021/acscombsci.5b00084

Lattice parameters and Raman-active phonon modes of (InxGa1–x)2O3 for x < 0.4

Christian Kranert, Jörg Lenzner, Marcus Jenderka, Michael Lorenz, Holger von Wenckstern, Rüdiger Schmidt-Grund and Marius Grundmann

Journal of Applied Physics, 2014, 116
DOI: 10.1063/1.4886895

Combinatorial Material Science and Strain Engineering Enabled by Pulsed Laser Deposition Using Radially Segmented Targets

Max Kneiß, Philipp Storm, Gabriele Benndorf, Marius Grundmann and Holger von Wenckstern

ACS Comb. Sci., 2018, 20, 643
DOI: 10.1021/acscombsci.8b00100

Energy-selective multichannel ultraviolet photodiodes based on (Mg,Zn)O

Zhipeng Zhang, Holger von Wenckstern and Marius Grundmann

Applied Physics Letters, 2013, 103
DOI: 10.1063/1.4826596

Anisotropic strain relaxation through prismatic and basal slip in α-(Al, Ga)2O3 on R-plane Al2O3

M. Grundmann and M. Lorenz

APL Materials, 2020, 8
DOI: 10.1063/1.5144744

Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition

Sofie Bitter, Peter Schlupp, Michael Bonholzer, Holger von Wenckstern and Marius Grundmann

ACS Comb. Sci., 2016, 18, 188
DOI: 10.1021/acscombsci.5b00179

Monolithic Forward‐Looking Photodetector for Use as Ultra‐Compact Wavemeter with Wide Spectral Range

Marius Grundmann

Physica Status Solidi (a), 2018, 215
DOI: 10.1002/pssa.201800651

Modeling of a Waveguide‐Based UV–VIS–IR Spectrometer Based on a Lateral (In,Ga)N Alloy Gradient

Marius Grundmann

Physica Status Solidi (a), 2019, 216
DOI: 10.1002/pssa.201900170

Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure

Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner and Marius Grundmann

Applied Physics Letters, 2016, 108
DOI: 10.1063/1.4954375

Structural and Elastic Properties of α‐(AlxGa1−x)2O3 Thin Films on (11.0) Al2O3 Substrates for the Entire Composition Range

Anna Hassa, Philipp Storm, Max Kneiß, Daniel Splith, Holger von Wenckstern, Michael Lorenz and Marius Grundmann

Physica Status Solidi (b), 2021, 258
DOI: 10.1002/pssb.202000394

Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films

A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva and M. Grundmann

APL Materials, 2019, 7
DOI: 10.1063/1.5054394

Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two‐dimensional lateral composition spread

Abdurashid Mavlonov, Steffen Richter, Holger von Wenckstern, Rüdiger Schmidt‐Grund, Jörg Lenzner, Michael Lorenz and Marius Grundmann

Physica Status Solidi (a), 2015, 212, 2850
DOI: 10.1002/pssa.201431932

Band Alignment of Al2O3 on α-(AlxGa1-x)2O3

Xinyi Xia, Nahid Sultan Al-Mamun, Chaker Fares, Aman Haque, Fan Ren, Anna Hassa, Holger von Wenckstern, Marius Grundmann and S. J. Pearton

ECS J. Solid State Sci. Technol., 2022, 11, 025006
DOI: 10.1149/2162-8777/ac546f

Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1–x)2O3 thin films

V. Prozheeva, R. Hölldobler, H. von Wenckstern, M. Grundmann and F. Tuomisto

Journal of Applied Physics, 2018, 123
DOI: 10.1063/1.5022245

Progression of group-III sesquioxides: epitaxy, solubility and desorption

Anna Hassa, Marius Grundmann and Holger von Wenckstern

J. Phys. D: Appl. Phys., 2021, 54, 223001
DOI: 10.1088/1361-6463/abd4a4

Identification of Biofilm Inhibitors by Screening Combinatorial Libraries of Metal Oxide Thin Films

Michal M. Dykas, Stuti K. Desai, Abhijeet Patra, Mallikarjuna Rao Motapothula, Kingshuk Poddar, Linda J. Kenney and T. Venkatesan

ACS Appl. Mater. Interfaces, 2018, 10, 12510
DOI: 10.1021/acsami.8b02246

(AlxGa1-x)2O3-based materials: Growth, properties, and device applications

Haojie Li, Zhengyuan Wu, Siyu Wu, Pengfei Tian and Zhilai Fang

Journal of Alloys and Compounds, 2023, 960, 170671
DOI: 10.1016/j.jallcom.2023.170671

Unravelling the Crystallization Process in Solution-Derived YBa2Cu3O7-δ Nanocomposite Films with Preformed ZrO2 Nanocrystals via Definitive Screening Design

Hannes Rijckaert, Pablo Cayado, Jens Hänisch, Jonas Billet, Manuela Erbe, Bernhard Holzapfel and Isabel Van Driessche

J. Phys. Chem. Lett., 2021, 12, 2118
DOI: 10.1021/acs.jpclett.1c00135

A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays

H. von Wenckstern, Z. Zhang, J. Lenzner, F. Schmidt and M. Grundmann

MRS Proc., 2014, 1633, 123
DOI: 10.1557/opl.2014.19

Masked-assisted radial-segmented target pulsed-laser deposition: A novel method for area-selective deposition using pulsed-laser deposition

Laurenz Thyen, Daniel Splith, Max Kneiß, Marius Grundmann and Holger von Wenckstern

Journal of Vacuum Science & Technology A, 2023, 41
DOI: 10.1116/6.0002275

Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74

Chaker Fares, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, Eric Lambers and S. J. Pearton

APL Materials, 2019, 7
DOI: 10.1063/1.5110498

Investigating the ranges of (meta)stable phase formation in (InxGa1−x)2O3 : Impact of the cation coordination

C. Wouters, C. Sutton, L. M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler and M. Albrecht

Phys. Rev. Materials, 2020, 4
DOI: 10.1103/PhysRevMaterials.4.125001

Monolithic Multichannel Ultraviolet Photodiodes Based on (Mg,Zn)O Thin Films With Continuous Composition Spreads

Zhipeng Zhang, Holger von Wenckstern and Marius Grundmann

IEEE J. Select. Topics Quantum Electron., 2014, 20, 106
DOI: 10.1109/JSTQE.2014.2319457

From high-Tcsuperconductors to highly correlated Mott insulators—25 years of pulsed laser deposition of functional oxides in Leipzig

Michael Lorenz, Holger Hochmuth, Max Kneiß, Michael Bonholzer, Marcus Jenderka and Marius Grundmann

Semicond. Sci. Technol., 2015, 30, 024003
DOI: 10.1088/0268-1242/30/2/024003

Demonstration of Two Multi‐Component Target Ablation Approaches and Their Application in Combinatorial Pulsed Laser Deposition

A. Jörns, H. von Wenckstern, S. Vogt, P. Schlupp and M. Grundmann

Advanced Physics Research, 2024
DOI: 10.1002/apxr.202300140

Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1−x)2O3

Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner, Michael Lorenz and Marius Grundmann

Applied Physics Letters, 2016, 108
DOI: 10.1063/1.4944860

Oxide bipolar electronics: materials, devices and circuits

Marius Grundmann, Fabian Klüpfel, Robert Karsthof, Peter Schlupp, Friedrich-Leonhard Schein, Daniel Splith, Chang Yang, Sofie Bitter and Holger von Wenckstern

J. Phys. D: Appl. Phys., 2016, 49, 213001
DOI: 10.1088/0022-3727/49/21/213001

Thin-Film Processing Routes for Combinatorial Materials Investigations—A Review

Paul J. McGinn

ACS Comb. Sci., 2019, 21, 501
DOI: 10.1021/acscombsci.9b00032

Lattice parameters and Raman-active phonon modes of β-(AlxGa1−x)2O3

Christian Kranert, Marcus Jenderka, Jörg Lenzner, Michael Lorenz, Holger von Wenckstern, Rüdiger Schmidt-Grund and Marius Grundmann

Journal of Applied Physics, 2015, 117
DOI: 10.1063/1.4915627

Monolithic Waveguide-Based Linear Photodetector Array for Use as Ultracompact Spectrometer

Marius Grundmann

IEEE Trans. Electron Devices, 2019, 66, 470
DOI: 10.1109/TED.2018.2877407

Superconducting HfO2-YBa2Cu3O7−δ Nanocomposite Films Deposited Using Ink-Jet Printing of Colloidal Solutions

Hannes Rijckaert, Pablo Cayado, Rainer Nast, Javier Diez Sierra, Manuela Erbe, Pedro López Dominguez, Jens Hänisch, Klaartje De Buysser, Bernhard Holzapfel and Isabel Van Driessche

Coatings, 2019, 10, 17
DOI: 10.3390/coatings10010017

Pulsed laser deposition with rapid beam deflection by a galvanometer mirror scanner

S. Maruyama, N. Sannodo, R. Harada, Y. Anada, R. Takahashi, M. Lippmaa and Y. Matsumoto

Review of Scientific Instruments, 2019, 90
DOI: 10.1063/1.5104291

Al Composition Dependence of Band Offsets for SiO2 on α-(AlxGa1−x)2O3

Xinyi Xia, Chaker Fares, Fan Ren, Anna Hassa, Holger von Wenckstern, Marius Grundmann and S. J. Pearton

ECS J. Solid State Sci. Technol., 2021, 10, 113007
DOI: 10.1149/2162-8777/ac39a8

Large-scale growth of few-layer two-dimensional black phosphorus

Zehan Wu, Yongxin Lyu, Yi Zhang, Ran Ding, Beining Zheng, Zhibin Yang, Shu Ping Lau, Xian Hui Chen and Jianhua Hao

Nat. Mater., 2021, 20, 1203
DOI: 10.1038/s41563-021-01001-7

Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65

Chaker Fares, Max Kneiß, Holger von Wenckstern, Marko Tadjer, Fan Ren, Eric Lambers, Marius Grundmann and S. J. Pearton

ECS J. Solid State Sci. Technol., 2019, 8, P351
DOI: 10.1149/2.0261906jss

Solubility limit and material properties of a κ-(AlxGa1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD

A. Hassa, C. Sturm, M. Kneiß, D. Splith, H. von Wenckstern, T. Schultz, N. Koch, M. Lorenz and M. Grundmann

APL Materials, 2020, 8
DOI: 10.1063/1.5141041

Combinatorial electrochemistry – Processing and characterization for materials discovery

Paul J. McGinn

Materials Discovery, 2015, 1, 38
DOI: 10.1016/j.md.2015.10.002

Group‐III Sesquioxides: Growth, Physical Properties and Devices

Holger von Wenckstern

Adv Elect Materials, 2017, 3
DOI: 10.1002/aelm.201600350

Dielectric function in the NIR-VUV spectral range of (InxGa1−x)2O3 thin films

R. Schmidt-Grund, C. Kranert, T. Böntgen, H. von Wenckstern, H. Krauß and M. Grundmann

Journal of Applied Physics, 2014, 116
DOI: 10.1063/1.4891521

A Review of the Segmented‐Target Approach to Combinatorial Material Synthesis by Pulsed‐Laser Deposition

Holger von Wenckstern, Max Kneiß, Anna Hassa, Philipp Storm, Daniel Splith and Marius Grundmann

Physica Status Solidi (b), 2020, 257
DOI: 10.1002/pssb.201900626

Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon

H von Wenckstern, D Splith, M Purfürst, Z Zhang, Ch Kranert, S Müller, M Lorenz and M Grundmann

Semicond. Sci. Technol., 2015, 30, 024005
DOI: 10.1088/0268-1242/30/2/024005

Temperature dependent self-compensation in Al- and Ga-doped Mg0.05Zn0.95O thin films grown by pulsed laser deposition

Abdurashid Mavlonov, Steffen Richter, Holger von Wenckstern, Rüdiger Schmidt-Grund, Michael Lorenz and Marius Grundmann

Journal of Applied Physics, 2016, 120
DOI: 10.1063/1.4968544

Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc–Tin–Oxide with Various Cation Compositions

Sofie Bitter, Peter Schlupp, Holger von Wenckstern and Marius Grundmann

ACS Appl. Mater. Interfaces, 2017, 9, 26574
DOI: 10.1021/acsami.7b06836

Oxid‐Halbleiter mit ultrabreiter Bandlücke

Marius Grundmann

Vak Forsch Prax, 2020, 32, 32
DOI: 10.1002/vipr.202000747

Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25–0.74

Chaker Fares, Minghan Xian, David J. Smith, Martha R. McCartney, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren and S. J. Pearton

Journal of Applied Physics, 2020, 127
DOI: 10.1063/5.0002875

Flexible hardware concept of pulsed laser deposition for large areas and combinatorial composition spreads

Michael Lorenz, Holger Hochmuth, Holger von Wenckstern and Marius Grundmann

Review of Scientific Instruments, 2023, 94
DOI: 10.1063/5.0142085

Cation segregation observed in an (In,Ga) 2O3 material thin film library beyond the miscibility limit of the bixbyite structure

S. Montag, D. Splith, M. Kneiß, M. Grundmann, J. Garcia Fernandez, Ø. Prytz and H. von Wenckstern

Phys. Rev. Materials, 2023, 7
DOI: 10.1103/PhysRevMaterials.7.094603

Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1−x)2O3 for x = 0.25–0.74

Chaker Fares, Minghan Xian, David J. Smith, M. R. McCartney, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren and S. J. Pearton

ECS J. Solid State Sci. Technol., 2020, 9, 045001
DOI: 10.1149/2162-8777/ab8364