Issue 12, 2024

A high-performance broadband phototransistor array of a PdSe2/SOI Schottky junction

Abstract

There is great interest in the incorporation of novel two-dimensional materials into Si-based technologies to realize multifunctional optoelectronic devices via heterogeneous integration. Here, we demonstrate a gate-tunable, self-driven, high-performance broadband phototransistor array based on a PdSe2/Si Schottky junction, which is fabricated by pre-depositing a semi-metallic PdSe2 film on a SOI substrate. In addition, thanks to the zero bandgap of the PdSe2 material and the PdSe2/Si vertical heterostructure, the prepared phototransistor exhibits pronounced photovoltaic properties in a wide spectral range from ultraviolet to near-infrared. The responsivity, specific detectivity and response time of the device at the incident light wavelength of 808 nm are 1.15 A W−1, 9.39 × 1010 Jones, and 27.1/40.3 μs, respectively, which are better than those of previously reported PdSe2-based photodetectors. The photoelectric performance can be further improved by applying an appropriate gate voltage to the phototransistor and the responsivity of the device increases to 1.61 A W−1 at VG = 5 V. We demonstrate the excellent imaging capabilities of a 4 × 4 array image sensor using PdSe2/SOI phototransistors under 375 nm, 532 nm, and 808 nm laser sources.

Graphical abstract: A high-performance broadband phototransistor array of a PdSe2/SOI Schottky junction

Supplementary files

Article information

Article type
Paper
Submitted
28 des. 2023
Accepted
19 feb. 2024
First published
20 feb. 2024

Nanoscale, 2024,16, 6078-6086

A high-performance broadband phototransistor array of a PdSe2/SOI Schottky junction

Y. Chen, Q. Zhu, J. Sun, Y. Sun, N. Hanagata and M. Xu, Nanoscale, 2024, 16, 6078 DOI: 10.1039/D3NR06643F

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