Issue 5, 2024

Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices

Abstract

Write-variability and resistance instability are major reliability concerns impeding implementation of oxide-based memristive devices in neuromorphic systems. The root cause of the reliability issues is the stochastic nature of conductive filament formation and dissolution, whose impact is particularly critical in the high resistive state (HRS). Optimizing the filament stability requires mitigating diffusive processes within the oxide, but these are unaffected by conventional electrode scaling. Here we propose a device design that laterally confines the switching oxide volume and thus the filament to 10 nm, which yields reliability improvements in our measurements and simulations. We demonstrate a 50% decrease in HRS write-variability for an oxide nano-fin device in our full factorial analysis of modulated current–voltage sweeps. Furthermore, we use ionic noise measurements to quantify the HRS filament stability against diffusive processes. The laterally confined filaments exhibit a change in the signal-to-noise ratio distribution with a shift to higher values. Our complementing kinetic Monte Carlo simulation of oxygen vacancy (re-)distribution for confined filaments shows improved noise behavior and elucidates the underlying physical mechanisms. While lateral oxide volume scaling down to filament sizes is challenging, our efforts motivate further examination and awareness of filament confinement effects in regards to reliability.

Graphical abstract: Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices

Supplementary files

Article information

Article type
Communication
Submitted
23 nóv. 2023
Accepted
12 mar. 2024
First published
15 mar. 2024
This article is Open Access
Creative Commons BY license

Nanoscale Horiz., 2024,9, 764-774

Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices

P. Stasner, N. Kopperberg, K. Schnieders, T. Hennen, S. Wiefels, S. Menzel, R. Waser and D. J. Wouters, Nanoscale Horiz., 2024, 9, 764 DOI: 10.1039/D3NH00520H

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