Issue 8, 2023

Two dimensional NbSe2/Nb2O5 metal–semiconductor heterostructure-based photoelectrochemical photodetector with fast response and high flexibility

Abstract

Two dimensional (2D) metal-semiconductor heterostructures are promising for high-performance optoelectronic devices due to fast carrier separation and transportation. Considering the superior metallic characteristics accompanied by high electrical conductivity in NbSe2, surface oxidation provides a facile way to form NbSe2/Nb2O5 metal-semiconductor heterostructures. Herein, size-dependent NbSe2/Nb2O5 nanosheets were achieved by a liquid phase exfoliation method and a gradient centrifugation strategy. These NbSe2/Nb2O5 heterostructure-based photodetectors show high responsivity with 23.21 μA W−1, fast response time of millisecond magnitude, and wide band detection ability in the UV-Vis region. It is noticeable that the photocurrent density is sensitive to the surface oxygen layer due to the oxygen-sensitized photoconduction mechanism. The flexible testing of the NbSe2/Nb2O5 heterostructure-based PEC-type photodetectors exhibits high photodetection performance even after bending and twisting. Beyond that, the solid-state PEC-type NbSe2/Nb2O5 photodetector also achieves relatively stable photodetection and high stability. This work promotes the application of 2D NbSe2/Nb2O5 metal-semiconductor heterostructures in flexible optoelectronic devices.

Graphical abstract: Two dimensional NbSe2/Nb2O5 metal–semiconductor heterostructure-based photoelectrochemical photodetector with fast response and high flexibility

Supplementary files

Article information

Article type
Communication
Submitted
03 maí 2023
Accepted
26 maí 2023
First published
02 jún. 2023

Nanoscale Horiz., 2023,8, 1113-1121

Two dimensional NbSe2/Nb2O5 metal–semiconductor heterostructure-based photoelectrochemical photodetector with fast response and high flexibility

X. Xu, C. Lu, Y. Wang, X. Bai, Z. Liu, Y. Zhang and D. Hua, Nanoscale Horiz., 2023, 8, 1113 DOI: 10.1039/D3NH00172E

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