Issue 19, 2021

Air-stable and efficient electron doping of monolayer MoS2 by salt–crown ether treatment

Abstract

To maximize the potential of transition-metal dichalcogenides (TMDCs) in device applications, the development of a sophisticated technique for stable and highly efficient carrier doping is critical. Here, we report the efficient n-type doping of monolayer MoS2 using KOH/benzo-18-crown-6, resulting in a doped TMDC that is air-stable. MoS2 field-effect transistors show an increase in on-current of three orders of magnitude and degenerate the n-type behaviour with high air-stability for ∼1 month as the dopant concentration increases. Transport measurements indicate a high electron density of 3.4 × 1013 cm−2 and metallic-type temperature dependence for highly doped MoS2. First-principles calculations support electron doping via surface charge transfer from the K/benzo-18-crown-6 complex to monolayer MoS2. Patterned doping is demonstrated to improve the contact resistance in MoS2-based devices.

Graphical abstract: Air-stable and efficient electron doping of monolayer MoS2 by salt–crown ether treatment

Supplementary files

Article information

Article type
Communication
Submitted
26 feb. 2021
Accepted
13 apr. 2021
First published
15 apr. 2021
This article is Open Access
Creative Commons BY license

Nanoscale, 2021,13, 8784-8789

Air-stable and efficient electron doping of monolayer MoS2 by salt–crown ether treatment

H. Ogura, M. Kaneda, Y. Nakanishi, Y. Nonoguchi, J. Pu, M. Ohfuchi, T. Irisawa, H. E. Lim, T. Endo, K. Yanagi, T. Takenobu and Y. Miyata, Nanoscale, 2021, 13, 8784 DOI: 10.1039/D1NR01279G

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