Recent developments in fabrication and performance of metal halide perovskite field-effect transistors

Abstract

In the past few years, metal halide perovskites (MHPs) have received numerous attention for being applied in photovoltaics, light-emitting diodes and photodetectors due to their excellent optoelectronic characteristics. However, the utilization of MHPs for field-effect transistors (FETs) lags much behind, which is mainly attributed to the challenges in device fabrication and the less-than-expected performance of MHP-based FETs. Summarizing the recent developments in fabrication and performance of MHP-based FETs is essential to further optimize device fabrication processes and to enhance device performance. This review focuses on the recent advances and developments in the fabrication and performance of MHP-based FETs. To begin with, the basics of FETs are briefly introduced. Next, the advances of FETs using 3D and 2D MHPs as semiconductor layers are summarized and the strategies, which can be employed to enhance device performance, are discussed. Finally, brief conclusions and perspectives of MHP FETs are given. Overall, this review brings together important information that aids the fabrication of MHP-based FETs with reliable and enhanced performance, aiming to promote the advancement and application of MHP-based FETs.