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Issue 39, 2015
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Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires

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Abstract

InGaAs nanowires offer great promise in fundamental studies of ternary compound semiconductors with variable composition and opens up a wide range of applications due to their bandgap tunability and high carrier mobility. Here, we report a study on the growth of Au-seeded InGaAs nanowires by metal–organic vapour phase epitaxy and present a model to explain the mechanisms that govern the growth and composition evolution in ternary III–V nanowires. The model allows us to further understand the limitations on the growth rate and incorporation of the two group III species imposed by the deposition conditions and some intrinsic properties of the material transport and nucleation. Within the model, the evolution of InGaAs nanowire growth rate and composition with particle size, temperature and V/III ratio is described and correlates very well with experimental findings. The understanding gained in this study should be useful for the controlled fabrication of tunable ternary nanowires for various applications.

Graphical abstract: Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires

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Article information


Submitted
22 jún. 2015
Accepted
25 ágú. 2015
First published
27 ágú. 2015

Nanoscale, 2015,7, 16266-16272
Article type
Paper
Author version available

Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires

A. S. Ameruddin, P. Caroff, H. H. Tan, C. Jagadish and V. G. Dubrovskii, Nanoscale, 2015, 7, 16266
DOI: 10.1039/C5NR04129E

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