Issue 10, 2023

Raman spectroscopy and carrier scattering in 2D tungsten disulfides with vanadium doping

Abstract

Doped 2D transition metal dichalcogenides have attracted much attention as room-temperature ferromagnetism can be realized in such semiconductors. For example, the magnetism of vanadium-doped WS2 (V-WS2) has been revealed, but there is still confusion about how the substituted vanadium atoms affect the carrier scattering of V-WS2. Here, we study the electron–phonon coupling and carrier scattering of V-WS2 by temperature-dependent Raman spectroscopy and electrical transport measurements. We identify a characteristic Raman peak at ∼212 cm−1, a fingerprint for V-WS2. We also reveal that the electron–phonon coupling is strengthened in V-WS2 and becomes more sensitive to temperature, which suppresses the carrier mobility and improves the sensitivity of its electronic performance to temperature. Moreover, the substituted vanadium not only causes an n- to p-type transition of the carrier transport behavior but also serves as charged impurities, making ionization scattering dominate the carrier transport process in V-WS2. Such modulation of carrier transport behavior in V-WS2 will facilitate its application in electronic and spintronic devices.

Graphical abstract: Raman spectroscopy and carrier scattering in 2D tungsten disulfides with vanadium doping

Supplementary files

Article information

Article type
Research Article
Submitted
27 okt. 2022
Accepted
27 feb. 2023
First published
28 feb. 2023

Mater. Chem. Front., 2023,7, 2059-2067

Raman spectroscopy and carrier scattering in 2D tungsten disulfides with vanadium doping

J. Zou, Y. Xu, X. Miao, H. Chen, R. Zhang, J. Tan, L. Tang, Z. Cai, C. Zhang, L. Kang, X. Zhang, C. Ma, H. Cheng and B. Liu, Mater. Chem. Front., 2023, 7, 2059 DOI: 10.1039/D2QM01108E

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