Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers

Jonghoon Shin, Haengha Seo, Kun Hee Ye, Yoon Ho Jang, Dae Seon Kwon, Junil Lim, Tae Kyun Kim, Heewon Paik, Haewon Song, Ha Ni Kim, Seungyong Byun, Seong Jae Shin, Kyung Do Kim, Yong Bin Lee, In Soo Lee, Jung-Hae Choi and Cheol Seong Hwang

J. Mater. Chem. C, 2024, 12, 5035
DOI: 10.1039/D4TC00061G

A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping

Catalin Palade, Ana-Maria Lepadatu, Adrian Slav, Ovidiu Cojocaru, Alin Iuga, Valentin Adrian Maraloiu, Antoniu Moldovan, Maria Dinescu, Valentin Serban Teodorescu, Toma Stoica and Magdalena Lidia Ciurea

J. Mater. Chem. C, 2021, 9, 12353
DOI: 10.1039/D1TC02921E

Highly stable performance of flexible Hf0.6Zr0.4O2 ferroelectric thin films under multi-service conditions

Wen-Yan Liu, Jia-Jia Liao, Jie Jiang, Yi-Chun Zhou, Qiang Chen, Sheng-Tao Mo, Qiong Yang, Qiang-Xiang Peng and Li-Mei Jiang

J. Mater. Chem. C, 2020, 8, 3878
DOI: 10.1039/C9TC05157K

Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory

Min Hyuk Park, Young Hwan Lee and Cheol Seong Hwang

Nanoscale, 2019, 11, 19477
DOI: 10.1039/C9NR05768D

Ferroelectric and field-induced ferroelectric phase formation in atomic-layer-deposited ZrO2 thin films with TiN electrodes

Jae Hee Song, Kyung Do Kim, Jonghoon Shin, Seong Jae Shin, Suk Hyun Lee, Seung Yong Byun, In Soo Lee, Han Sol Park, Yeon Jae Kim, Hyun Woo Nam and Cheol Seong Hwang

J. Mater. Chem. C, 2025, 13, 14751
DOI: 10.1039/D5TC01449B

Low coercive field in quasi-epitaxial Al-doped HfO2 films for energy-efficient ferroelectric memories

In Pyo Hong, Rui He, Thi My Huyen Nguyen, Jae ho Park, Min Joon Kim and Chung Wung Bark

J. Mater. Chem. A, 2025, 13, 25673
DOI: 10.1039/D5TA02301G

Grain size engineering via a Hf0.5Zr0.5O2 seed layer for FeFET memory and synaptic devices

Junhyeok Park, Chulwon Chung, Boncheol Ku, Seunghyeon Yun, Kyungsoo Park and Changhwan Choi

Nanoscale, 2025, 17, 10324
DOI: 10.1039/D4NR05381H

Charge-compensated co-doping stabilizes robust hafnium oxide ferroelectricity

Gang Li, Yulin Liu, Shaoan Yan, Ningjie Ma, Yongguang Xiao, Minghua Tang and Zhilin Long

J. Mater. Chem. C, 2024, 12, 6257
DOI: 10.1039/D4TC00281D

Theoretical understanding of the in-plane tensile strain effects on enhancing the ferroelectric performance of Hf0.5Zr0.5O2 and ZrO2 thin films

Kun Hee Ye, Taeyoung Jeong, Seungjae Yoon, Dohyun Kim, Cheol Seong Hwang and Jung-Hae Choi

Nanoscale, 2025, 17, 540
DOI: 10.1039/D4NR03333G

Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices

Kisung Chae, Andrew C. Kummel and Kyeongjae Cho

Nanoscale Adv., 2021, 3, 4750
DOI: 10.1039/D1NA00230A

Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without annealing

Hyo-Bae Kim, Moonyoung Jung, Youkyoung Oh, Seung Won Lee, Dongseok Suh and Ji-Hoon Ahn

Nanoscale, 2021, 13, 8524
DOI: 10.1039/D1NR01535D

Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

Min Hyuk Park, Dong Hyun Lee, Kun Yang, Ju-Yong Park, Geun Taek Yu, Hyeon Woo Park, Monica Materano, Terence Mittmann, Patrick D. Lomenzo, Thomas Mikolajick, Uwe Schroeder and Cheol Seong Hwang

J. Mater. Chem. C, 2020, 8, 10526
DOI: 10.1039/D0TC01695K

Evolution of crystallographic structure and ferroelectricity of Hf0.5Zr0.5O2 films with different deposition rate

Taeho Kim, Minho An and Sanghun Jeon

AIP Advances, 2020, 10
DOI: 10.1063/1.5121454

High-k HfxZr1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal

Dipjyoti Das and Sanghun Jeon

IEEE Trans. Electron Devices, 2020, 67, 2489
DOI: 10.1109/TED.2020.2985635

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Shu Shi, Haolong Xi, Tengfei Cao, Weinan Lin, Zhongran Liu, Jiangzhen Niu, Da Lan, Chenghang Zhou, Jing Cao, Hanxin Su, Tieyang Zhao, Ping Yang, Yao Zhu, Xiaobing Yan, Evgeny Y. Tsymbal, He Tian and Jingsheng Chen

Nat Commun, 2023, 14
DOI: 10.1038/s41467-023-37560-3

Highly enhanced ferroelectricity in HfO 2 -based ferroelectric thin film by light ion bombardment

Seunghun Kang, Woo-Sung Jang, Anna N. Morozovska, Owoong Kwon, Yeongrok Jin, Young-Hoon Kim, Hagyoul Bae, Chenxi Wang, Sang-Hyeok Yang, Alex Belianinov, Steven Randolph, Eugene A. Eliseev, Liam Collins, Yeehyun Park, Sanghyun Jo, Min-Hyoung Jung, Kyoung-June Go, Hae Won Cho, Si-Young Choi, Jae Hyuck Jang, Sunkook Kim, Hu Young Jeong, Jaekwang Lee, Olga S. Ovchinnikova, Jinseong Heo, Sergei V. Kalinin, Young-Min Kim and Yunseok Kim

Science, 2022, 376, 731
DOI: 10.1126/science.abk3195

Progress in computational understanding of ferroelectric mechanisms in HfO2

Tianyuan Zhu, Liyang Ma, Shiqing Deng and Shi Liu

npj Comput Mater, 2024, 10
DOI: 10.1038/s41524-024-01352-0

Enhancement of ferroelectricity in chemical-solution-deposited ZrO2 thin films through fine phase transition control

Yue Sun, Jianping Ning, Juan Xi, Jinqi Duan and Dayu Zhou

Ceramics International, 2024, 50, 27371
DOI: 10.1016/j.ceramint.2024.05.035

Optimization of the In Situ Biasing FIB Sample Preparation for Hafnia-Based Ferroelectric Capacitor

Qilan Zhong, Yiwei Wang, Yan Cheng, Zhaomeng Gao, Yunzhe Zheng, Tianjiao Xin, Yonghui Zheng, Rong Huang and Hangbing Lyu

Micromachines, 2021, 12, 1436
DOI: 10.3390/mi12121436

Uniform Al0.87Sc0.13N Thin Film Deposition at Wafer Scale through Magnetron Sputtering

Mei Wang, Xinhang Wang, Jun Gao, Zhengwang Cheng, Shengjia Li, Wendou Ding, Aobo Wang, Huating Bo, Zhenghao Guo, Wei Zou, Minghu Pan and Xinguo Ma

Crystal Growth & Design, 2025, 25, 7446
DOI: 10.1021/acs.cgd.5c00401

Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD

M. Lederer, T. Kämpfe, R. Olivo, D. Lehninger, C. Mart, S. Kirbach, T. Ali, P. Polakowski, L. Roy and K. Seidel

Applied Physics Letters, 2019, 115
DOI: 10.1063/1.5129318

Hafnia-based ferroelectrics: alloying, doping, and applications

Soo Jin Jung, Ji Hye Park, Hyojung Kim and Ho Won Jang

J. Korean Ceram. Soc., 2026
DOI: 10.1007/s43207-025-00574-2

A Kinetic Pathway to Orthorhombic HfZrO

Guan-Hua Chen, Yu-Rui Chen, Zefu Zhao, Jia-Yang Lee, Yun-Wen Chen, Yifan Xing, Rachit Dobhal and C. W. Liu

IEEE J. Electron Devices Soc., 2023, 11, 752
DOI: 10.1109/JEDS.2023.3336077

Advancements in artificial synapses: The role of fluorite–structured ferroelectrics

P.R. Sekhar Reddy

Nano Trends, 2025, 9, 100074
DOI: 10.1016/j.nwnano.2025.100074

Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering

Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux and Bertrand Vilquin

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2019, 37
DOI: 10.1116/1.5060643

Monolithic integration and ferroelectric phase evolution of hafnium zirconium oxide in 2D neuromorphic synaptic devices

W.L. Sarney, A.L. Glasmann, J.S. Pearson, C.K. McGinn, P.M. Litwin, R.S. Bisht, S. Ramanathan, S.J. McDonnell, C.A. Hacker and S. Najmaei

Materials Today Nano, 2023, 24, 100378
DOI: 10.1016/j.mtnano.2023.100378

Effects of shear strain on HZO ferroelectric orthorhombic phases

Yun-Wen Chen and C. W. Liu

Applied Physics Letters, 2023, 123
DOI: 10.1063/5.0159700

Switching Dynamics in Anti‐Ferroelectric Transistor for Multimodal Reservoir Computing

Yufei Shi, Ngoc Thanh Duong, Yu‐Chieh Chien, Sifan Li, Heng Xiang, Haofei Zheng and Kah‐Wee Ang

Adv Funct Materials, 2024, 34
DOI: 10.1002/adfm.202400879

Highly Stable Epitaxially Crystallized Ferroelectric Hf0.5Zr0.5O2 Films

Xueliang Lyu, Tingfeng Song, Alberto Quintana, Ignasi Fina and Florencio Sánchez

ACS Appl. Electron. Mater., 2023, 5, 6142
DOI: 10.1021/acsaelm.3c01085

A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors

Baek Su Kim, Seung Dam Hyun, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Hyeon Woo Park, Yong Bin Lee, Jangho Roh, Beom Yong Kim, Ho Hyun Kim, Min Hyuk Park and Cheol Seong Hwang

Nanoscale Res Lett, 2020, 15
DOI: 10.1186/s11671-020-03301-4

The fundamentals and applications of ferroelectric HfO2

Uwe Schroeder, Min Hyuk Park, Thomas Mikolajick and Cheol Seong Hwang

Nat Rev Mater, 2022, 7, 653
DOI: 10.1038/s41578-022-00431-2

Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf1-xZrxO2 by first principle calculations

Kun Hee Ye, In Won Yeu, Gyuseung Han, Taeyoung Jeong, Seungjae Yoon, Dohyun Kim, Cheol Seong Hwang and Jung-Hae Choi

Applied Physics Reviews, 2023, 10
DOI: 10.1063/5.0160719

Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films

Boncheol Ku, Yu-Rim Jeon, Moonsuk Choi, Chulwon Chung and Changhwan Choi

Applied Surface Science, 2022, 601, 154039
DOI: 10.1016/j.apsusc.2022.154039

Optimizing the Ferroelectric Properties of Hf1–xZrxO2 Films via Crystal Orientation

Chih-Yu Teng, Chia-Chieh Cheng, Kai-Shin Li, Chenming Hu, Jhih-Min Lin, Bi-Hsuan Lin, Mau-Tsu Tang and Yuan-Chieh Tseng

ACS Appl. Electron. Mater., 2023, 5, 1114
DOI: 10.1021/acsaelm.2c01582

Nanoscale Investigation of the Effect of Annealing Temperature on the Polarization Switching Dynamics of Hf0.5Zr0.5O2 Thin Films

Sang Won An, Seong Bin Bae, Beomjun Kim, Yoon Ki Kim, Jaeseung Kim, Tae Hyun Jung, Jae Heon Lee, Sang Woo Lee, Yu Bin Park, Hyunjung Kim, Hyobin Yoo and Sang Mo Yang

Adv Materials Inter, 2024, 11
DOI: 10.1002/admi.202400156

Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

Maximilian Lederer, Thomas Kämpfe, Norman Vogel, Dirk Utess, Beate Volkmann, Tarek Ali, Ricardo Olivo, Johannes Müller, Sven Beyer, Martin Trentzsch, Konrad Seidel and Lukas M. Eng

Nanomaterials, 2020, 10, 384
DOI: 10.3390/nano10020384

Ultralow operating voltage for energy conversion performance in Hf1–Zr O2 thin films

Ying Hou, Baoyuan Wang, Zhen Luo, Xinzhe Du, Zijian Wang, Yi Fang and Xiaoguang Li

Journal of Materiomics, 2024, 10, 1206
DOI: 10.1016/j.jmat.2024.01.001

Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility

Dae Seon Kwon, Jasper Bizindavyi, Gourab De, Attilio Belmonte, Annelies Delabie, Laura Nyns, Gouri Sankar Kar, Jan Van Houdt and Mihaela Ioana Popovici

ACS Appl. Mater. Interfaces, 2024, 16, 41704
DOI: 10.1021/acsami.4c08988

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

Robin Materlik, Christopher Künneth, Max Falkowski, Thomas Mikolajick and Alfred Kersch

Journal of Applied Physics, 2018, 123
DOI: 10.1063/1.5021746

Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfₓZr₁₋ₓO₂Capacitors

Dipjyoti Das, Batzorig Buyantogtokh, Venkateswarlu Gaddam and Sanghun Jeon

IEEE Trans. Electron Devices, 2021, 68, 1996
DOI: 10.1109/TED.2021.3061963

Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

Shuxian Lyu, Xiao Long, Yang Yang, Wei Wei, Yuanxiang Chen, Hong Xie, Bowen Nie, Boping Wang, Yuan Wang, Pengfei Jiang, Tiancheng Gong, Yan Wang and Qing Luo

Adv Elect Materials, 2025, 11
DOI: 10.1002/aelm.202400466

Wake-Up and Endurance Characteristics in Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitor Depending on the Crystal Orientation of the TiN Bottom Electrodes

Dong Hee Han, Ae Jin Lee, Min Kyeong Nam, Seungwoo Lee, Su Jin Choi, Youngjin Kim, Taehwan Moon and Woojin Jeon

IEEE Trans. Electron Devices, 2023, 70, 1983
DOI: 10.1109/TED.2023.3243579

Synergistic design of interfacial conditions and textured Pt electrodes for enhanced ferroelectricity in ZrO2 ultrathin films

Shu-Chih Chang, Hsiang-Chih Chan, Hsin-Yu Hsieh, Chin-Lung Kuo, Miin-Jang Chen and Jay Shieh

Acta Materialia, 2025, 296, 121215
DOI: 10.1016/j.actamat.2025.121215

Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO2 thin film

Boncheol Ku, Yue Ma, Hoonhee Han, Wang Xuan and Changhwan Choi

Nanotechnology, 2022, 33, 425205
DOI: 10.1088/1361-6528/ac7cf7

Greatly enhanced fatigue resistance in Hf0.5Zr0.5O2/La0.7Sr0.3MnO3 superlattices

Peijie Jiao, Zhiyu Liu, Hongying Chen, Mingkai Qing, Yurong Yang, Yu Deng and Di Wu

Phys. Rev. Applied, 2024, 21
DOI: 10.1103/PhysRevApplied.21.054024

Recent Advances in Hafnium Oxide Nanomaterials: From Controlled Synthesis, Structure, and Surface Engineering to Biomedical Applications

Mothana Hussein Tarawneh, Mohammed Ali Dheyab, Azhar Abdul Rahman, Mutaz Mohammad Alsardi, Azlan Abdul Aziz, Saleh T. Alanezi, Wesam Abdullah, Sara Abdulwahab and Mehran Ghasemlou

Rare Metals, 2026, 45
DOI: 10.1002/rar2.70204

A new approach to achieving strong ferroelectric properties in TiN/Hf0.5Zr0.5O2/TiN devices

Hyungwoo Kim, Alireza Kashir, Seungyeol Oh and Hyunsang Hwang

Nanotechnology, 2021, 32, 055703
DOI: 10.1088/1361-6528/abc115

Wake-Up and Imprint Effects in Hafnium Oxide-Based Ferroelectric Capacitors during Cycling with Different Interval Times

Yaru Ding, Zeping Weng, Zhangsheng Lan, Chu Yan, Daolin Cai, Yiming Qu and Yi Zhao

Electronics, 2024, 13, 1021
DOI: 10.3390/electronics13061021

Extra hole threshold in HfO2 ferroelectric phase stabilization

Xixiang Jing, Yuhao Yue, Shuning Lv, Kang Jia, Kepeng Song, Fatoye Sawyerr, Qi Hu, Zekun Zhang, Shu Shi, Shifeng Wen, Li-Min Liu, Jingsheng Chen, Xiaoli Fan, Zheng Wen and Tengfei Cao

Commun Phys, 2025, 8
DOI: 10.1038/s42005-025-02438-x

High annealing temperature assisted broadening of the ferroelectric concentration window in Al:HfO2 MFS structures

Xin Liu, Lulu Yao, Yonghong Cheng and Bing Xiao

Jpn. J. Appl. Phys., 2019, 58, 090903
DOI: 10.7567/1347-4065/ab3494

Time‐Dependent Imprint in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Kenshi Takada, Shuya Takarae, Kento Shimamoto, Norifumi Fujimura and Takeshi Yoshimura

Adv Elect Materials, 2021, 7
DOI: 10.1002/aelm.202100151

Unveiled Ferroelectricity in Well‐Known Non‐Ferroelectric Materials and Their Semiconductor Applications

Dong Hyun Lee, Younghwan Lee, Yong Hyeon Cho, Hyojun Choi, Se Hyun Kim and Min Hyuk Park

Adv Funct Materials, 2023, 33
DOI: 10.1002/adfm.202303956

The effect of stress on HfO2-based ferroelectric thin films: A review of recent advances

Runhao Han, Peizhen Hong, Shuai Ning, Qiang Xu, Mingkai Bai, Jing Zhou, Kaiyi Li, Fei Liu, Feng Shi, Feng Luo and Zongliang Huo

J. Appl. Phys., 2023, 133, 240702
DOI: 10.1063/5.0146998

Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (HfxZr1−x)O2 thin films

H. Alex Hsain, Younghwan Lee, Gregory Parsons and Jacob L. Jones

Applied Physics Letters, 2020, 116
DOI: 10.1063/5.0002835

Precrystallization Engineering of Hf0.5Zr0.5O2 Film in Back-End-of-Line Compatible Ferroelectric Device for Enhanced Remnant Polarization and Endurance

Yuan Wang, Yang Yang, Pengfei Jiang, Shuxian Lv, Boping Wang, Yuting Chen, Yaxin Ding, Tiancheng Gong and Qing Luo

IEEE Electron Device Lett., 2023, 44, 396
DOI: 10.1109/LED.2023.3238120

Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors

Yu-Sen Jiang, Kuei-Wen Huang, Sheng-Han Yi, Chin-I Wang, Teng-Jan Chang, Wei-Chung Kao, Chun-Yuan Wang, Yu-Tung Yin, Jay Shieh and Miin-Jang Chen

Journal of the European Ceramic Society, 2022, 42, 6997
DOI: 10.1016/j.jeurceramsoc.2022.07.031

Advancements in materials, devices, and integration schemes for a new generation of neuromorphic computers

Sina Najmaei, Andreu L. Glasmann, Marshall A. Schroeder, Wendy L. Sarney, Matthew L. Chin and Daniel M. Potrepka

Materials Today, 2022, 59, 80
DOI: 10.1016/j.mattod.2022.08.017

First‐Principles Calculation of Basic Properties of Rhombohedral Hafnium Oxide with Space Group R3

Alexander Reznik, Vyacheslav Konstantinov, Ekaterina Ganykina and Askar Rezvanov

Physica Status Solidi (b), 2025, 262
DOI: 10.1002/pssb.202400105

Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

So-Yeong Na, So-Jung Yoon, Seung-Youl Kang, Seung-Eon Moon and Sung-Min Yoon

Jpn. J. Appl. Phys., 2019, 58, 070907
DOI: 10.7567/1347-4065/ab2c62

Polarization switching kinetics of the ferroelectric Al-doped HfO2 thin films prepared by atomic layer deposition with different ozone doses

So-Jung Yoon, So-Yeong Na, Seung-Eon Moon and Sung-Min Yoon

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2019, 37
DOI: 10.1116/1.5110621

A Bibliometric Analysis of Fluorite Resource Utilization Technology: Global and Chinese Development in the Past 25 Years

Zhengbo Gao, Chenxu Zhang and Belinda McFadzean

Minerals, 2025, 15, 679
DOI: 10.3390/min15070679

In Situ Characterization of Ferroelectric HfO2 During Rapid Thermal Annealing

Vijay Kris Narasimhan, Martin E. McBriarty, Donata Passarello, Valerio Adinolfi, Michael F. Toney, Apurva Mehta and Karl A. Littau

Physica Rapid Research Ltrs, 2021, 15
DOI: 10.1002/pssr.202000598

Origin of morphotropic phase boundary in thin-film Hf0.5Zr0.5O2 on the TiN electrode

Il Young Lee and Jaejun Yu

Journal of Applied Physics, 2023, 134
DOI: 10.1063/5.0159496

Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf0.5Zr0.5O2 Fatigue

Zimeng Zhang, Isaac Craig, Tao Zhou, Martin Holt, Raul Flores, Evan Sheridan, Katherine Inzani, Xiaoxi Huang, Joyeeta Nag, Bhagwati Prasad, Sinéad M. Griffin and Ramamoorthy Ramesh

Adv Elect Materials, 2024, 10
DOI: 10.1002/aelm.202300877

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Yu Yun, Pratyush Buragohain, Ming Li, Zahra Ahmadi, Yizhi Zhang, Xin Li, Haohan Wang, Jing Li, Ping Lu, Lingling Tao, Haiyan Wang, Jeffrey E. Shield, Evgeny Y. Tsymbal, Alexei Gruverman and Xiaoshan Xu

Nat. Mater., 2022, 21, 903
DOI: 10.1038/s41563-022-01282-6

Epitaxial Ferroelectric Hf0.5Zr0.5O2 with Metallic Pyrochlore Oxide Electrodes

Zimeng Zhang, Shang‐Lin Hsu, Vladimir A. Stoica, Hanjong Paik, Eric Parsonnet, Alexander Qualls, Jianjun Wang, Liang Xie, Mukesh Kumari, Sujit Das, Zhinan Leng, Martin McBriarty, Roger Proksch, Alexei Gruverman, Darrell G. Schlom, Long‐Qing Chen, Sayeef Salahuddin, Lane W. Martin and Ramamoorthy Ramesh

Advanced Materials, 2021, 33
DOI: 10.1002/adma.202006089

Structural characteristics and polarization switching behaviors in HfO2-ZrO2 ferroelectric nanolaminates

Zhibin Yang, Binjian Zeng, Changfan Ju, Jiajia Liao, Shuaizhi Zheng, Min Liao and Yichun Zhou

Journal of Alloys and Compounds, 2024, 1004, 175909
DOI: 10.1016/j.jallcom.2024.175909

Local epitaxial-like templating effects and grain size distribution in atomic layer deposited Hf0.5Zr0.5O2 thin film ferroelectric capacitors

S. F. Lombardo, M. Tian, K. Chae, J. Hur, N. Tasneem, S. Yu, K. Cho, A. C. Kummel, J. Kacher and A. I. Khan

Applied Physics Letters, 2021, 119
DOI: 10.1063/5.0057782

Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

Robin Khosla and Satinder K. Sharma

ACS Appl. Electron. Mater., 2021, 3, 2862
DOI: 10.1021/acsaelm.0c00851

Improvement of memory storage capacity and prolongation of endurance/retention through H2 plasma treatment of IGZO/HZO structure

Cheng-Rui Liu, Yu-Tzu Tsai, Yu-Ting Chen, Zheng-Kai Chen, Zi-Rong Huang, Sheng-Min Wang, Chia-Shuo Pai and Ying-Tsan Tang

Journal of Applied Physics, 2024, 136
DOI: 10.1063/5.0214983

Effects of random ferroelectric and dielectric phase distributions on junctionless ferroelectric field effect transistors

Honglei Huo, Weifeng Lü, Yubin Wang, Shuaiwei Zhao and Xinfeng Zheng

Micro and Nanostructures, 2024, 196, 207997
DOI: 10.1016/j.micrna.2024.207997

Comprehensive Study on the Kinetic Formation of the Orthorhombic Ferroelectric Phase in Epitaxial Y-Doped Ferroelectric HfO2 Thin Films

Yuki Tashiro, Takao Shimizu, Takanori Mimura and Hiroshi Funakubo

ACS Appl. Electron. Mater., 2021, 3, 3123
DOI: 10.1021/acsaelm.1c00342

A perspective on the physical scaling down of hafnia-based ferroelectrics

Ju Yong Park, Dong Hyun Lee, Geun Hyeong Park, Jaewook Lee, Younghwan Lee and Min Hyuk Park

Nanotechnology, 2023, 34, 202001
DOI: 10.1088/1361-6528/acb945

Unveiling Ferroelectric HZO Cryogenic Performance (4–300 K): Kinetic Barrier Engineering and Underlying Mechanism

Dong Zhang, Yang Feng, Zijie Zheng, Chen Sun, Qiwen Kong, Yue Chen, Xiaolin Wang, Yuye Kang, Kaizhen Han, Gan Liu, Zuopu Zhou, Zhilun Zhang, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen and Xiao Gong

IEEE Trans. Electron Devices, 2025, 72, 1788
DOI: 10.1109/TED.2025.3546871

Fabrication and Characterization of Ferroelectric Capacitors with a Symmetric Hybrid TiN/W/HZO/W/TiN Electrode Structure

Ha-Jung Kim, Jae-Hyuk Choi, Seong-Eui Lee, So-Won Kim and Hee-Chul Lee

Materials, 2025, 18, 3547
DOI: 10.3390/ma18153547

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

Jike Lyu, Ignasi Fina, Josep Fontcuberta and Florencio Sánchez

ACS Appl. Mater. Interfaces, 2019, 11, 6224
DOI: 10.1021/acsami.8b18762

Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer

Beom Yong Kim, Hyeon Woo Park, Seung Dam Hyun, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Deok‐Yong Cho, Min Hyuk Park and Cheol Seong Hwang

Adv Elect Materials, 2022, 8
DOI: 10.1002/aelm.202100042

Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

Markus Neuber, Maximilian Walter Lederer, Konstantin Mertens, Thomas Kämpfe, Malte Czernohorsky and Konrad Seidel

Crystals, 2022, 12, 1115
DOI: 10.3390/cryst12081115

Designing Topotactic Ion-Exchange Reactions in Solid-State Oxides Through First-Principles Calculations

Issei Suzuki, Masao Kita and Takahisa Omata

Chem. Mater., 2024, 36, 4196
DOI: 10.1021/acs.chemmater.3c03016

Impact of Zr Precursor on Electrical Characteristics of HfZrO Laminated Structure

Seungwon Go, Hyungju Noh, Dong Keun Lee, Seonggeun Kim, Jae Yeon Park, Unhyun Im, Hojoong Lee, Sihyun Kim and Sangwan Kim

IEEE Electron Device Lett., 2024, 45, 2001
DOI: 10.1109/LED.2024.3435547

Progress on hafnium oxide-based emerging ferroelectric materials and applications

Zihao Zhu, Bangmin Zhang and Yue Zheng

Microstructures, 2025, 5
DOI: 10.20517/microstructures.2025.32

Physical origin of hafnium-based ferroelectricity

Shuning Lv, Tengfei Cao, Zihe Wang, Tingxiao Xie, Shuang Gao, Gilberto Teobaldi, Qi Hu and Li-Min Liu

Computational Materials Today, 2024, 4, 100010
DOI: 10.1016/j.commt.2024.100010

Improved leakage and fatigue properties of W/Hf0.5Zr0.5O2/W capacitor through the insertion of Pt metallic layer

Dao Wang, Yan Zhang, Yongbin Guo, Zhenzhen Shang and Danfeng He

Materials Science in Semiconductor Processing, 2025, 188, 109165
DOI: 10.1016/j.mssp.2024.109165

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

Anna G. Chernikova, Maxim G. Kozodaev, Dmitry V. Negrov, Evgeny V. Korostylev, Min Hyuk Park, Uwe Schroeder, Cheol Seong Hwang and Andrey M. Markeev

ACS Appl. Mater. Interfaces, 2018, 10, 2701
DOI: 10.1021/acsami.7b15110

Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction

Min Hyuk Park, Ching‐Chang Chung, Tony Schenk, Claudia Richter, Karl Opsomer, Christophe Detavernier, Christoph Adelmann, Jacob L. Jones, Thomas Mikolajick and Uwe Schroeder

Adv Elect Materials, 2018, 4
DOI: 10.1002/aelm.201800091

Random ferroelectric and dielectric phase distribution-induced device variation of negative capacitance field-effect transistors

Weifeng Lü, Dengke Chen, Caiyun Zhang, Weijie Wei and Ying Han

Results in Physics, 2023, 47, 106388
DOI: 10.1016/j.rinp.2023.106388

Ultra-thin ferroelectrics

Huimin Qiao, Chenxi Wang, Woo Seok Choi, Min Hyuk Park and Yunseok Kim

Materials Science and Engineering: R: Reports, 2021, 145, 100622
DOI: 10.1016/j.mser.2021.100622

Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films

Hyangsook Lee, Duk-Hyun Choe, Sanghyun Jo, Jung-Hwa Kim, Hyun Hwi Lee, Hyun-Joon Shin, Yeehyun Park, Seunghun Kang, Yeonchoo Cho, Seontae Park, Taehwan Moon, Deokjoon Eom, Mirine Leem, Yunseok Kim, Jinseong Heo, Eunha Lee and Hyoungsub Kim

ACS Appl. Mater. Interfaces, 2021, 13, 36499
DOI: 10.1021/acsami.1c08718

Structural evolution of epitaxial CeO2-HfO2 thin films using atomic-scale observation: Formation of ferroelectric phase and domain structure

Takahisa Shiraishi, Sujin Choi, Takanori Kiguchi and Toyohiko J. Konno

Acta Materialia, 2022, 235, 118091
DOI: 10.1016/j.actamat.2022.118091

Metastability at Defective Metal Oxide Interfaces and Nanoconfined Structures

Vincenzo Esposito and Ivano E. Castelli

Adv Materials Inter, 2020, 7
DOI: 10.1002/admi.201902090

Neuromorphic devices based on fluorite‐structured ferroelectrics

Dong Hyun Lee, Geun Hyeong Park, Se Hyun Kim, Ju Yong Park, Kun Yang, Stefan Slesazeck, Thomas Mikolajick and Min Hyuk Park

InfoMat, 2022, 4
DOI: 10.1002/inf2.12380

Exploring the role of TiN electrodes in the formation of ferroelectric HfxZr1-xO2 thin films through transmission electron microscopy

Sojin Kim, Jaewook Lee, Jong Hyeok Seo, Jinseok Hong, Ji-Hwan Kwon, Min Hyuk Park and Seung-Yong Lee

J. Korean Ceram. Soc., 2024, 61, 327
DOI: 10.1007/s43207-023-00361-x

Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding

Dong Zhang, Jixuan Wu, Qiwen Kong, Zijie Zheng, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Yuye Kang, Gerui Zheng, Jiezhi Chen and Xiao Gong

IEEE Trans. Electron Devices, 2023, 70, 6665
DOI: 10.1109/TED.2023.3317007

Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO2 Thin Film

Kunwoo Park, Dongmin Kim, Kyoungjun Lee, Hyun-Jae Lee, Jihoon Kim, Sungsu Kang, Alex Lin, Alexander J. Pattison, Wolfgang Theis, Chang Hoon Kim, Hyesung Choi, Jung Woo Cho, Peter Ercius, Jun Hee Lee, Seung Chul Chae and Jungwon Park

ACS Nano, 2024
DOI: 10.1021/acsnano.4c08721

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Haiming Qin, Nan He, Cong Han, Miaocheng Zhang, Yu Wang, Rui Hu, Jiawen Wu, Weijing Shao, Mohamed Saadi, Hao Zhang, Youde Hu, Yi Liu, Xinpeng Wang and Yi Tong

Nanomaterials, 2024, 14, 986
DOI: 10.3390/nano14110986

Emerging Fluorite-Structured Antiferroelectrics and Their Semiconductor Applications

Geun Hyeong Park, Dong Hyun Lee, Hyojun Choi, Taegyu Kwon, Yong Hyeon Cho, Se Hyun Kim and Min Hyuk Park

ACS Appl. Electron. Mater., 2023, 5, 642
DOI: 10.1021/acsaelm.2c01615

Seed layer effect on the phase evolution of the La-doped hafnium zirconium oxide with back-end-of-line compatibility

Dae Seon Kwon, Jasper Bizindavyi, Pradyumna Kumar Parida, Gourab De, Hyun-Cheol Kim, Olivier Richard, Paola Favia, Attilio Belmonte, Annelies Delabie, Laura Nyns, Gouri Sankar Kar, Jan Van Houdt and Mihaela Ioana Popovici

Applied Surface Science, 2026, 717, 164786
DOI: 10.1016/j.apsusc.2025.164786

Demonstration of High Ferroelectricity (P$_{{r}}$ ~ 29 $\mu$ C/cm2) in Zr Rich HfxZr1–xO2 Films

Dipjyoti Das, Venkateswarlu Gaddam and Sanghun Jeon

IEEE Electron Device Lett., 2020, 41, 34
DOI: 10.1109/LED.2019.2955198

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Thomas Mikolajick, Stefan Slesazeck, Min Hyuk Park and Uwe Schroeder

MRS Bull., 2018, 43, 340
DOI: 10.1557/mrs.2018.92

Ultrahigh Energy Storage Density in Superparaelectric‐Like Hf0.2Zr0.8O2 Electrostatic Supercapacitors

Haiyan Chen, Lei Liu, Zhongna Yan, Xi Yuan, Hang Luo and Dou Zhang

Advanced Science, 2023, 10
DOI: 10.1002/advs.202300792

Innovative Ultralow Thermal Budget ZrHfOx Ferroelectric Films with Low-Temperature Phase Transition for Next-Generation High-Speed Multifunctional Devices

Yongkai Liu, Tianyu Wang, Yifan Song, Kangli Xu, Ruihong Yuan, Zhenhai Li, Jiajie Yu, Jialin Meng, Hao Zhu, Qingqing Sun, David Wei Zhang and Lin Chen

Nano Lett., 2025, 25, 157
DOI: 10.1021/acs.nanolett.4c04654

Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing

Shigehisa Shibayama, Jotaro Nagano, Mitsuo Sakashita and Osamu Nakatsuka

Jpn. J. Appl. Phys., 2020, 59, SMMA04
DOI: 10.35848/1347-4065/ab80de

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering

Terence Mittmann, Monica Materano, Patrick D. Lomenzo, Min Hyuk Park, Igor Stolichnov, Matteo Cavalieri, Chuanzhen Zhou, Ching‐Chang Chung, Jacob L. Jones, Thomas Szyjka, Martina Müller, Alfred Kersch, Thomas Mikolajick and Uwe Schroeder

Adv Materials Inter, 2019, 6
DOI: 10.1002/admi.201900042

Modulating the microscopic lattice distortions through the Al-rich layers for boosting the ferroelectricity in Al:HfO2 nanofilms

Lulu Yao, Sambit Das, Xin Liu, Kai Wu, Yonghong Cheng, Vikram Gavini and Bing Xiao

J. Phys. D: Appl. Phys., 2022, 55, 455501
DOI: 10.1088/1361-6463/ac8f55

Deep learning of accurate force field of ferroelectric HfO2

Jing Wu, Yuzhi Zhang, Linfeng Zhang and Shi Liu

Phys. Rev. B, 2021, 103
DOI: 10.1103/PhysRevB.103.024108

Structure, performance regulation and typical device applications of HfO₂-based ferroelectric films

Guo-Liang Yuan, Chen-Hao Wang, Wen-Bin Tang, Rui Zhang and Xu-Bing Lu

Acta Phys. Sin., 2023, 72, 097703
DOI: 10.7498/aps.72.20222221

Orthorhombic ZrO2 thin films via atomic layer deposition from tris(dimethylamino)cyclopentadienyl zirconium and water

Basit Ali, Ramin Ghiyasi, Joona Pekkanen, Mika Lastusaari and Maarit Karppinen

Materials Today Communications, 2026, 115134
DOI: 10.1016/j.mtcomm.2026.115134

Engineering Strategies in Emerging Fluorite-Structured Ferroelectrics

Ju Yong Park, Dong Hyun Lee, Kun Yang, Se Hyun Kim, Geun Taek Yu, Geun Hyeong Park, Eun Been Lee, Kwang Ho Kim and Min Hyuk Park

ACS Appl. Electron. Mater., 2022, 4, 1369
DOI: 10.1021/acsaelm.1c00792

Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing

Herng Yau Yoong, Haijun Wu, Jianhui Zhao, Han Wang, Rui Guo, Juanxiu Xiao, Bangmin Zhang, Ping Yang, Stephen John Pennycook, Ning Deng, Xiaobing Yan and Jingsheng Chen

Adv Funct Materials, 2018, 28
DOI: 10.1002/adfm.201806037

Kinetical phase transition paths and phase stability in ferroelectric HfO2

Jiangheng Yang, Jiajia Liao, Jin Huang, Fei Yan, Min Liao and Yichun Zhou

Scripta Materialia, 2024, 242, 115953
DOI: 10.1016/j.scriptamat.2023.115953

Significant improvement of ferroelectricity and reliability in Hf0.5Zr0.5O2 films by inserting an ultrathin Al2O3 buffer layer

Haiyan Chen, Lin Tang, Leyang Liu, Yonghong Chen, Hang Luo, Xi Yuan and Dou Zhang

Applied Surface Science, 2021, 542, 148737
DOI: 10.1016/j.apsusc.2020.148737

Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxide

Maximilian Lederer, Pratik Bagul, David Lehninger, Konstantin Mertens, André Reck, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel and Lukas M. Eng

ACS Appl. Electron. Mater., 2021, 3, 4115
DOI: 10.1021/acsaelm.1c00590

Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode

Dao Wang, Yan Zhang, Jiali Wang, Chunlai Luo, Ming Li, Wentao Shuai, Ruiqiang Tao, Zhen Fan, Deyang Chen, Min Zeng, Jiyan Y. Dai, Xubing B. Lu and J.-M. Liu

Journal of Materials Science & Technology, 2022, 104, 1
DOI: 10.1016/j.jmst.2021.07.016

Electric field induced paraelectric-to- paraelectric phase transformations in Y2O3-Hf0.5Zr0.5O2 ceramics

Amit Kumar, Andy Fitch and Ajay Kumar Kalyani

Solid State Communications, 2026, 411, 116361
DOI: 10.1016/j.ssc.2026.116361

Grain boundary stabilization of fluorite ferroelectrics

Shiyu Wang, Hai Zhong, Siyi Song, Ang Gao, Qinghua Zhang, Dong Su, Kuijuan Jin, Chen Ge and Lin Gu

Nat. Mater., 2026
DOI: 10.1038/s41563-026-02533-6

Effect of top electrode on interfacial layer formation and polarization switching kinetics in post-deposition annealed Hf0.5Zr0.5O2 capacitors

Yu Bin Park, Tae Hyun Jung, Beomjun Kim, Jeonglyul Kim, Jung Kyu Lee, Sang Won An, Chang-Su Woo, Beomjong Kim, Hyung-Suk Jung, Hyobin Yoo and Sang Mo Yang

Current Applied Physics, 2026, 86, 11
DOI: 10.1016/j.cap.2026.02.004

Morphotropic Phase Boundary of Hf1–xZrxO2 Thin Films for Dynamic Random Access Memories

Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun and Cheol Seong Hwang

ACS Appl. Mater. Interfaces, 2018, 10, 42666
DOI: 10.1021/acsami.8b15576

Effect of Ce doping on ferroelectric HfO2 from first-principles: Implications for ferroelectric thin films and phase regulation

Yushui Tian, Yulu Zhou, Miao Zhao, Yifang Ouyang and Xiaoma Tao

Journal of Solid State Chemistry, 2023, 328, 124316
DOI: 10.1016/j.jssc.2023.124316

Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering

Alireza Kashir, Hyungwoo Kim, Seungyeol Oh and Hyunsang Hwang

ACS Appl. Electron. Mater., 2021, 3, 629
DOI: 10.1021/acsaelm.0c00671

Fabrication and characterization of HfxAl(1-x)Oy ceramic targets and thin films by RF sputtering

In Pyo Hong, Rui He and Chung Wung Bark

Ceramics International, 2024, 50, 30963
DOI: 10.1016/j.ceramint.2024.05.401

Insights into the ferroelectric orthorhombic phase formation in doped HfO2 thin films

Yichen Wen, Maokun Wu, Boyao Cui, Xuepei Wang, Yishan Wu, Yu-Chun Li, Sheng Ye, Pengpeng Ren, Hong-Liang Lu, Runsheng Wang, Zhigang Ji and Ru Huang

Journal of Applied Physics, 2024, 136
DOI: 10.1063/5.0226390

Electrode chemistry impact on retention performance of ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2−x) capacitors

Benjamin L. Aronson, Ece Gunay, Sebastian Calderon, Nikhat Khan, Samantha T. Jaszewski, Megan K. Lenox, Fernando Vega, Leonard Jacques, Helge H. Heinrich, Nikhil Shukla, Susan Trolier-McKinstry, Thomas E. Beechem, Elizabeth C. Dickey and Jon F. Ihlefeld

Journal of Applied Physics, 2026, 139
DOI: 10.1063/5.0308254

Structural Evolution of CeO ₂-HfO ₂ Thin Films Using Atomic-Scale Observation: Formation of Ferroelectric Phase and Domain Structure

Takahisa Shiraishi, Sujin Choi, Takanori Kiguchi and Toyohiko J. Konno

SSRN Journal, 2021
DOI: 10.2139/ssrn.3975653

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

Uwe Schroeder, Monica Materano, Terence Mittmann, Patrick D. Lomenzo, Thomas Mikolajick and Akira Toriumi

Jpn. J. Appl. Phys., 2019, 58, SL0801
DOI: 10.7567/1347-4065/ab45e3

Many routes to ferroelectric HfO2: A review of current deposition methods

Hanan Alexandra Hsain, Younghwan Lee, Monica Materano, Terence Mittmann, Alexis Payne, Thomas Mikolajick, Uwe Schroeder, Gregory N. Parsons and Jacob L. Jones

Journal of Vacuum Science & Technology A, 2022, 40
DOI: 10.1116/6.0001317

Ferroelectricity in HfO₂ and related ferroelectrics

Takao Shimizu

J. Ceram. Soc. Japan, 2018, 126, 667
DOI: 10.2109/jcersj2.18104

Contribution of oxygen vacancies to phase transition and ferroelectricity of Al:HfO2 films

Xin Liu, Lulu Yao, Weidong Zhao, Jiawei Wang and Yonghong Cheng

Nanotechnology, 2024, 35, 375702
DOI: 10.1088/1361-6528/ad53d4

Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides

Min Hyuk Park, Young Hwan Lee, Thomas Mikolajick, Uwe Schroeder and Cheol Seong Hwang

Adv Elect Materials, 2019, 5
DOI: 10.1002/aelm.201800522

Effect of Process Temperature on Density and Electrical Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Hak-Gyeong Kim, Da-Hee Hong, Jae-Hoon Yoo and Hee-Chul Lee

Nanomaterials, 2022, 12, 548
DOI: 10.3390/nano12030548

Ferroelectric and Dielectric Properties of Hf0.5Zr0.5O2 Thin Film Near Morphotropic Phase Boundary

Alireza Kashir and Hyunsang Hwang

Physica Status Solidi (a), 2021, 218
DOI: 10.1002/pssa.202000819

Low-Temperature Growth of Ferroelectric Hf0.5Zr0.5O2 Thin Films Assisted by Deep Ultraviolet Light Irradiation

Hyunjin Joh, Gopinathan Anoop, Won-June Lee, Dipjyoti Das, Jun Young Lee, Tae Yeon Kim, Hoon Kim, WooJun Seol, Jiwon Yeom, Sanghun Jeon, Seungbum Hong, Myung-Han Yoon and Ji Young Jo

ACS Appl. Electron. Mater., 2021, 3, 1244
DOI: 10.1021/acsaelm.0c01065

Examination of Ferroelectric Domain Dynamics in HZO Under Endurance Cycling Stress

Ryun-Han Koo, Wonjun Shin, Sangwoo Ryu, Seungwhan Kim, Gyuweon Jung, Sung-Tae Lee, Jae-Joon Kim, Daewoong Kwon and Jong-Ho Lee

IEEE Electron Device Lett., 2024, 45, 1016
DOI: 10.1109/LED.2024.3390090

Fluorite-structure antiferroelectrics

Min Hyuk Park and Cheol Seong Hwang

Rep. Prog. Phys., 2019, 82, 124502
DOI: 10.1088/1361-6633/ab49d6

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device

Hyungwoo Kim, Alireza Kashir, Seungyeol Oh, Hojung Jang and Hyunsang Hwang

Nanotechnology, 2021, 32, 315712
DOI: 10.1088/1361-6528/abfb9a

Origin of La Doping-Induced Endurance Improvement and Wake-up Effect Reduction in Ferroelectric HfO2 Thin Films

Tao Yu, Shining Geng, Binjian Zeng, Ge Wang, Zewen Xiao, Yichun Zhou and Min Liao

Phys. Rev. Applied, 2023, 20
DOI: 10.1103/PhysRevApplied.20.054052

Negative differential capacitance in ultrathin ferroelectric hafnia

Sanghyun Jo, Hyangsook Lee, Duk-Hyun Choe, Jung-Hwa Kim, Yun Seong Lee, Owoong Kwon, Seunggeol Nam, Yoonsang Park, Kihong Kim, Byeong Gyu Chae, Sangwook Kim, Seunghun Kang, Taehwan Moon, Hagyoul Bae, Jung Yeon Won, Dong-Jin Yun, Myoungho Jeong, Hyun Hwi Lee, Yeonchoo Cho, Kwang-Hee Lee, Hyun Jae Lee, Sangjun Lee, Kab-Jin Nam, Dongjin Jung, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Seongjun Park, Yunseok Kim, Eunha Lee and Jinseong Heo

Nat Electron, 2023, 6, 390
DOI: 10.1038/s41928-023-00959-3

Domains and domain dynamics in fluorite-structured ferroelectrics

Dong Hyun Lee, Younghwan Lee, Kun Yang, Ju Yong Park, Se Hyun Kim, Pothala Reddi Sekhar Reddy, Monica Materano, Halid Mulaosmanovic, Thomas Mikolajick, Jacob L. Jones, Uwe Schroeder and Min Hyuk Park

Applied Physics Reviews, 2021, 8
DOI: 10.1063/5.0047977

Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films

Jike Lyu, Ignasi Fina, Raul Solanas, Josep Fontcuberta and Florencio Sánchez

ACS Appl. Electron. Mater., 2019, 1, 220
DOI: 10.1021/acsaelm.8b00065

Intrinsic Defect Limit to the Growth of Orthorhombic HfO2 and (Hf,Zr)O2 with Strong Ferroelectricity: First‐Principles Insights

Jinchen Wei, Lilai Jiang, Menglin Huang, Yuning Wu and Shiyou Chen

Adv Funct Materials, 2021, 31
DOI: 10.1002/adfm.202104913

Achieving the large remanent polarization of top heavily doped Al:HfO2 nanofilms embedded with Al-rich interlayers and revealing the underlying phase transition mechanism from atomic structure modelling

Lulu Yao, Sambit Das, Haoliang Liu, Xin Liu, Nan Li, Kai Wu, Yonghong Cheng, Vikram Gavini and Bing Xiao

Thin Solid Films, 2025, 809, 140596
DOI: 10.1016/j.tsf.2024.140596

Stabilizing the Ferroelectric Phase of Hf0.5Zr0.5O2 Thin Films by Charge Transfer

Shu Shi, Tengfei Cao, Haolong Xi, Jiangzhen Niu, Xixiang Jing, Hanxin Su, Xiaojiang Yu, Ping Yang, Yichen Wu, Xiaobing Yan, He Tian, Evgeny Y. Tsymbal and Jingsheng Chen

Phys. Rev. Lett., 2024, 133
DOI: 10.1103/PhysRevLett.133.036202

Composition-dependent structure and bandgaps in HfxZr1−xO2 thin films

Xiaoman Yang, Tong Zhou, Enda Hua, Zhongliao Wang, Zhongliang Liu, Haifeng Wang and Qinzhuang Liu

Applied Physics Letters, 2024, 124
DOI: 10.1063/5.0197282

Crystal Phase Distribution and Ferroelectricity in Ultrathin HfO2–ZrO2 Bilayers

Martin E. McBriarty, Vijay K. Narasimhan, Stephen L. Weeks, Ashish Pal, Huazhi Fang, Trevor A. Petach, Apurva Mehta, Ryan C. Davis, Sergey V. Barabash and Karl A. Littau

Physica Status Solidi (b), 2020, 257
DOI: 10.1002/pssb.201900285

Epitaxial growth of Yb/Er co-doped HfO2 films with coexisting ferroelectric and luminescent properties

Jie Tu, Yingjia Li, Erxiang Tang, Xiaoyu Qiu, Xiang Xu, Zijian Chen, Yujie Zhou, Chen Zhou, Zhao Guan, Ni Zhong, Pinghua Xiang and Binbin Chen

Applied Physics Letters, 2025, 126
DOI: 10.1063/5.0264399

Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300 °C by inserting TiO2 interlayers

Yuanshen Qi, Xianbin Xu, Igor Krylov and Moshe Eizenberg

Applied Physics Letters, 2021, 118
DOI: 10.1063/5.0037887

Combined effects of the deposition temperature and metal electrodes on ferroelectric properties of atomic-layer-deposited Hf0.5Zr0.5O2 films

Deokjoon Eom, Jehoon Lee, Woohui Lee, Joohee Oh, Changyu Park, Jinyong Kim, Hyangsook Lee, Eunha Lee and Hyoungsub Kim

J. Phys. D: Appl. Phys., 2023, 56, 065301
DOI: 10.1088/1361-6463/acaf0a

A Brief Review on the Ferroelectric Fluorite-Structured Nanolaminate

Kun Yang, Ju Yong Park, Dong Hyun Lee, Se Hyun Kim, Geun Taek Yu, Geun Hyeong Park, Eun Been Lee, Je In Lee and Min Hyuk Park

Korean J. Met. Mater., 2021, 59, 849
DOI: 10.3365/KJMM.2021.59.12.849

Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors

Batzorig Buyantogtokh, Venkateswarlu Gaddam and Sanghun Jeon

Journal of Applied Physics, 2021, 129
DOI: 10.1063/5.0050535

BEOL-Compatible Annealing-Free HfxZr1-xO2 Ferroelectric Device and Investigation of Cycle-Dependent Evolution Mechanisms

Yongkai Liu, Aolin Yuan, Yifan Song, Ruihong Yuan, Pei Liu, Zhenhai Li, Ze Xu, Kangli Xu, Jiajie Yu, Jialin Meng, Chen Wang, Hao Zhu, Qingqing Sun, David Wei Zhang, Tianyu Wang and Lin Chen

IEEE Trans. Electron Devices, 2025, 72, 5422
DOI: 10.1109/TED.2025.3601559

Lanthanum doping induced structural changes and their implications on ferroelectric properties of Hf1−xZrxO2 thin film

Furqan Mehmood, Thomas Mikolajick and Uwe Schroeder

Applied Physics Letters, 2020, 117
DOI: 10.1063/5.0021007

Effects of growth orientations and epitaxial strains on phase stability of HfO2 thin films

Shi Liu and Brendan M. Hanrahan

Phys. Rev. Materials, 2019, 3
DOI: 10.1103/PhysRevMaterials.3.054404

Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films

Dong Hyun Lee, Geun Taek Yu, Ju Yong Park, Se Hyun Kim, Kun Yang, Geun Hyeong Park, Jin Ju Ryu, Je In Lee, Gun Hwan Kim and Min Hyuk Park

Acta Materialia, 2022, 222, 117405
DOI: 10.1016/j.actamat.2021.117405

Enhancement of Energy Storage and Efficiency in Antiferroelectric Hf᙮Zr᙮₋₁O₂ Supercapacitors Through Tailored Phase Engineering by Oxygen Vacancy

Zhiquan He, Yu Bai, Guanlin Li, Xuanxi Liu, Xiuyi Wang, Chuhao Yao, Pengfei Jiang, Tiancheng Gong, Wei Wei, Xiao Long, Xinzhong Zhu, Yuan Qiu, Heng Ye, Yuan Wang and Qing Luo

IEEE Electron Device Lett., 2025, 46, 1893
DOI: 10.1109/LED.2025.3599694

Thickness scaling of ferroelectric Hf0.5Zr0.5O2 films: How microstructural evolution drives leakage current amplification

I.A. Savichev, M.G. Kozodaev, S.N. Polyakov, E.N. Korobkin, S.V. Ilyev, I.G. Margolin, G.M. Zirnik, S.A. Gudkova, D.A. Vinnik and A.A. Chouprik

Journal of Alloys and Compounds, 2025, 1038, 182250
DOI: 10.1016/j.jallcom.2025.182250

Regulating phase transformation kinetics via redox reaction in ferroelectric Ge-doped HfO2

T. Yajima, T. Nishimura, S. Migita, T. Tanaka, K. Uchida and A. Toriumi

Applied Physics Letters, 2020, 117
DOI: 10.1063/5.0028620

Wake-up-mitigated giant ferroelectricity in Hf0.5Zr0.5O2 thin films through oxygen-providing, surface-oxidized W electrode

Kun Yang, Gi-Yeop Kim, Jin Joo Ryu, Dong Hyun Lee, Ju Yong Park, Se Hyun Kim, Geun Hyeong Park, Geun Taek Yu, Gun Hwan Kim, Si Young Choi and Min Hyuk Park

Materials Science in Semiconductor Processing, 2023, 164, 107565
DOI: 10.1016/j.mssp.2023.107565

Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO2 Thin Films towards General Parameters to Engineer the Ferroelectricity

Tianning Cui, Liping Zhu, Danyang Chen, Yuyan Fan, Jingquan Liu and Xiuyan Li

Electronics, 2022, 11, 2369
DOI: 10.3390/electronics11152369

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Yan Cheng, Zhaomeng Gao, Kun Hee Ye, Hyeon Woo Park, Yonghui Zheng, Yunzhe Zheng, Jianfeng Gao, Min Hyuk Park, Jung-Hae Choi, Kan-Hao Xue, Cheol Seong Hwang and Hangbing Lyu

Nat Commun, 2022, 13
DOI: 10.1038/s41467-022-28236-5

Improved Ferroelectric Properties of Hafnium Zirconium Oxide Solid Solution and Nanolaminate via Functional Capping Layer Engineering for Low-Power Memory Applications

Hyun-Cheol Kim, Mihaela Ioana Popovici, Gourab De, Dae Seon Kwon, Gwon Kim, Hendrik F. W. Dekkers, Laura Nyns, Attilio Belmonte, Annelies Delabie and Jan Van Houdt

ACS Appl. Energy Mater., 2026, 9, 1750
DOI: 10.1021/acsaem.5c03643

Ferroelectricity of pristine Hf0.5Zr0.5O2 films fabricated by atomic layer deposition

Luqiu 璐秋 Chen 陈, Xiaoxu 晓旭 Zhang 张, Guangdi 光迪 Feng 冯, Yifei 逸飞 Liu 刘, Shenglan 胜兰 Hao 郝, Qiuxiang 秋香 Zhu 朱, Xiaoyu 晓钰 Feng 冯, Ke 可 Qu 屈, Zhenzhong 振中 Yang 杨, Yuanshen 原深 Qi 祁, Yachin Ivry, Brahim Dkhil, Bobo 博博 Tian 田, Junhao 君浩 Chu 褚 and Chungang 纯刚 Duan 段

Chinese Phys. B, 2023, 32, 108102
DOI: 10.1088/1674-1056/accff3

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Changfan Ju, Binjian Zeng, Ziqi Luo, Zhibin Yang, Puqi Hao, Luocheng Liao, Qijun Yang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou and Min Liao

Journal of Materiomics, 2024, 10, 277
DOI: 10.1016/j.jmat.2023.05.013

Systematic studies of the effects of group-III dopants (La, Y, Al, and Gd) in Hf0.5Zr0.5O2 ferroelectrics by ab initio simulations

Liang Zhao, Jirong Liu and Yi Zhao

Applied Physics Letters, 2021, 119
DOI: 10.1063/5.0066169

Nanoelectromechanical resonators for gigahertz frequency control based on hafnia–zirconia–alumina superlattices

Troy Tharpe, Eitan Hershkovitz, Faysal Hakim, Honggyu Kim and Roozbeh Tabrizian

Nat Electron, 2023, 6, 599
DOI: 10.1038/s41928-023-00999-9

Fabrication of Ultrathin Ferroelectric Al0.7Sc0.3N Films under Complementary‐Metal‐Oxide‐Semiconductor Compatible Conditions by using HfN0.4 Electrode

Seung Kyu Ryoo, Kyung Do Kim, Wonho Choi, Panithan Sriboriboon, Seungjae Heo, Haengha Seo, Yoon Ho Jang, Jeong Woo Jeon, Min Kyu Yeom, Suk Hyun Lee, Han Sol Park, Yunseok Kim and Cheol Seong Hwang

Advanced Materials, 2025, 37
DOI: 10.1002/adma.202413295

Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets

Aleksandra A. Koroleva, Anna G. Chernikova, Sergei S. Zarubin, Evgeny Korostylev, Roman R. Khakimov, Maksim Yu. Zhuk and Andrey M. Markeev

ACS Omega, 2022, 7, 47084
DOI: 10.1021/acsomega.2c06237

A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance

Jon F. Ihlefeld, Samantha T. Jaszewski and Shelby S. Fields

Applied Physics Letters, 2022, 121
DOI: 10.1063/5.0129546

Experimental study of endurance characteristics of Al-doped HfO2 ferroelectric capacitor

Yejoo Choi, Jaemin Shin, Seungjun Moon, Jinhong Min, Changwoo Han and Changhwan Shin

Nanotechnology, 2023, 34, 185203
DOI: 10.1088/1361-6528/acb7fc

A MoS2 Hafnium Oxide Based Ferroelectric Encoder for Temporal‐Efficient Spiking Neural Network

Yu‐Chieh Chien, Heng Xiang, Yufei Shi, Ngoc Thanh Duong, Sifan Li and Kah‐Wee Ang

Advanced Materials, 2023, 35
DOI: 10.1002/adma.202204949

A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices

Min Hyuk Park, Han Joon Kim, Gwangyeop Lee, Jaehong Park, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Hyun Woo Park, Hye Jung Chang, Jung-Hae Choi and Cheol Seong Hwang

Applied Physics Reviews, 2019, 6
DOI: 10.1063/1.5118737

Search for Ferroelectric Binary Oxides: Chemical and Structural Space Exploration Guided by Group Theory and Computations

Rohit Batra, Huan Doan Tran, Brienne Johnson, Brandon Zoellner, Paul A. Maggard, Jacob L. Jones, George A. Rossetti and Rampi Ramprasad

Chem. Mater., 2020, 32, 3823
DOI: 10.1021/acs.chemmater.9b05324

Cryogenic electronics for high performance computing applications: A comprehensive review

Faisal Bashir, Haider Abbas, Arshid Nisar, Usman Isyaku Bature, Ali Alzahrani and Furqan Zahoor

Materials Today Physics, 2025, 59, 101960
DOI: 10.1016/j.mtphys.2025.101960

Effects of Zr content and annealing on ferroelectricity of as-grown crystalline Hf1-xZrxO2 thin films using Hf[Cp(NMe2)3] and Zr[Cp(NMe2)3] precursors via atomic layer deposition

Youkyoung Oh, Hyo-Bae Kim, Seung Won Lee, Min Ji Jeong, Tae Joo Park and Ji-Hoon Ahn

Ceramics International, 2022, 48, 25661
DOI: 10.1016/j.ceramint.2022.05.397

Impact of annealing temperature on the ferroelectric properties of W/Hf0.5Zr0.5O2/W capacitor

Dao Wang, Yan Zhang, Yongbin Guo, Zhenzhen Shang, Fangjian Fu and Xubing Lu

Chinese Phys. B, 2023, 32, 097701
DOI: 10.1088/1674-1056/aca9c6

Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO₂ Film by Fast Ramping and Fast Cooling Process

Lingwei Zhang, Giuk Kim, Sangho Lee, Hunbeom Shin, Youngjin Lim, Kang Kim, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn and Sanghun Jeon

IEEE Trans. Electron Devices, 2024, 71, 7398
DOI: 10.1109/TED.2024.3475308

Binary ferroelectric oxides for future computing paradigms

Min Hyuk Park, Daewoong Kwon, Uwe Schroeder and Thomas Mikolajick

MRS Bulletin, 2021, 46, 1071
DOI: 10.1557/s43577-021-00210-4

Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films

Young Hwan Lee, Seung Dam Hyun, Hae Jin Kim, Jun Shik Kim, Chanyoung Yoo, Taehwan Moon, Keum Do Kim, Hyeon Woo Park, Yong Bin Lee, Baek Su Kim, Jangho Roh, Min Hyuk Park and Cheol Seong Hwang

Adv Elect Materials, 2019, 5
DOI: 10.1002/aelm.201800436

Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

Wanwang Yang, Chenxi Yu, Haolin Li, Mengqi Fan, Xujin Song, Haili Ma, Zheng Zhou, Pengying Chang, Peng Huang, Fei Liu, Xiaoyan Liu and Jinfeng Kang

J. Semicond., 2023, 44, 053101
DOI: 10.1088/1674-4926/44/5/053101

Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization

Zhaomeng Gao, Weifeng Zhang, Qilan Zhong, Yonghui Zheng, Shuxian Lv, Qiqiao Wu, Yanling Song, Shengjie Zhao, Yunzhe Zheng, Tianjiao Xin, Yiwei Wang, Wei Wei, Xinqian Ren, Jianguo Yang, Chen Ge, Jiahua Tao, Yan Cheng and Hangbing Lyu

Device, 2023, 1, 100004
DOI: 10.1016/j.device.2023.100004

Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

Da Hee Hong, Jae Hoon Yoo, Won Ji Park, So Won Kim, Jong Hwan Kim, Sae Hoon Uhm and Hee Chul Lee

Nanomaterials, 2023, 13, 900
DOI: 10.3390/nano13050900

Future Materials for Beyond Si Integrated Circuits: A Perspective

Luigi Colombo, Salim El Kazzi, Mihaela Popovici, Gilles Delie, Dae Seon Kwon, Sean RC McMitchell and Christoph Adelmann

IEEE Trans. Mat. Electron Devices, 2024, 1, 178
DOI: 10.1109/TMAT.2024.3497835

Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films

Hsing-Yang Chen, Yu-Sen Jiang, Chun-Ho Chuang, Chi-Lin Mo, Ting-Yun Wang, Hsin-Chih Lin and Miin-Jang Chen

Nanotechnology, 2024, 35, 105201
DOI: 10.1088/1361-6528/ad0f52

Giant Near-Infrared Induced Polarization Change via a Long-Lived Hidden Phase of a Valence Tautomeric Complex

Wenwei Zheng, Shu-Qi Wu, Qirui Shui, Shinji Kanegawa, Sheng-Qun Su and Osamu Sato

J. Am. Chem. Soc., 2025, 147, 13953
DOI: 10.1021/jacs.5c02909

Special topic on ferroelectricity in hafnium oxide: Materials and devices

Thomas Mikolajick, Uwe Schroeder and Min Hyuk Park

Applied Physics Letters, 2021, 118
DOI: 10.1063/5.0054064

Growth kinetics of the ferroelectric Al-doped HfO2 thin films via synergistic effect of various essential factors

Yanhu Mao, Wanli Zhang, Lian Cui, Minghua Tang, Pengyu Su, Xiaojiang Long, Gang Li, Yongguang Xiao and Shaoan Yan

Ceramics International, 2021, 47, 4674
DOI: 10.1016/j.ceramint.2020.10.034

Atomic layer deposited HfZrO4-based memristive devices: annealing effect and multilevel storage capability

Rahul Ramesh, Spyros Stathopoulos, Sanjay Kumar, Hannah Levene, Deepika Yadav, Andreas Tsiamis and Themis Prodromakis

Front. Nanotechnol., 2026, 8
DOI: 10.3389/fnano.2026.1729291

Ferroelectric Compensation Effect of the Hard Electrode for the HfO2‐ZrO2 Superlattice Films at the Low‐Annealing Temperature

Chuqian Zhu, Na Bai, Yufan Wang, Huajun Sun, Lanqing Zou, Yunhui Yi, Jiyang Xu, Jiawang Ren, Junming Zhang, Sheng Hu, Kanhao Xue, Lei Ye, Weiming Cheng, Qiang He and Xiangshui Miao

Adv Elect Materials, 2025, 11
DOI: 10.1002/aelm.202400830

Thermodynamic control of ferroelectric-phase formation in HfxZr1−xO2 and ZrO2

Shigehisa Shibayama, Tomonori Nishimura, Shinji Migita and Akira Toriumi

Journal of Applied Physics, 2018, 124
DOI: 10.1063/1.5028181

Atomic layer deposition of HZO ferroelectric films beyond the upper thickness limit via tetragonal-phase nucleation engineering

Binjian Zeng, Xikang Li, Kang Zhou, Qijun Yang, Changfan Ju, Shuaizhi Zheng, Qiangxiang Peng, Qiong Yang, Yichun Zhou, Limei Jiang and Min Liao

Applied Physics Reviews, 2026, 13
DOI: 10.1063/5.0305962

Sub 5 Å-EOT HfₓZr1–x O₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process

Dipjyoti Das, Batzorig Buyantogtokh, Venkateswarlu Gaddam and Sanghun Jeon

IEEE Trans. Electron Devices, 2022, 69, 103
DOI: 10.1109/TED.2021.3131403

Defect Engineering to Achieve Wake‐up Free HfO2‐Based Ferroelectrics

Alireza Kashir, Seungyeol Oh and Hyunsang Hwang

Adv Eng Mater, 2021, 23
DOI: 10.1002/adem.202000791

Ferroelectricity in bulk hafnia

Thomas Mikolajick and Uwe Schroeder

Nat. Mater., 2021, 20, 718
DOI: 10.1038/s41563-020-00914-z

Metastable polar orthorhombic local structure of hydrothermally grown HfO2 nanocrystals

Guan-Wen Liu, Wasif Zaheer, Luis Carrillo and Sarbajit Banerjee

Cell Reports Physical Science, 2024, 5, 101818
DOI: 10.1016/j.xcrp.2024.101818

Oxygen diffusion coefficients in ferroelectric hafnium zirconium oxide thin films

Liron Shvilberg, Chuanzhen Zhou, Megan K. Lenox, Benjamin L. Aronson, Nicolas K. Lam, Samantha T. Jaszewski, Elizabeth J. Opila and Jon F. Ihlefeld

Applied Physics Letters, 2024, 124
DOI: 10.1063/5.0209502

A first-principles study on ferroelectric phase formation of Si-doped HfO2 through nucleation and phase transition in thermal process

Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto and Masaharu Kobayashi

Applied Physics Letters, 2020, 117
DOI: 10.1063/5.0035139

Multiple polarization orders in individual twinned colloidal nanocrystals of centrosymmetric HfO2

Hongchu Du, Christoph Groh, Chun-Lin Jia, Thorsten Ohlerth, Rafal E. Dunin-Borkowski, Ulrich Simon and Joachim Mayer

Matter, 2021, 4, 986
DOI: 10.1016/j.matt.2020.12.008

Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO2 on Silicon

Hanif Ali, Adityanarayan Pandey, Rowtu Srinu, Paritosh Meihar, Shubham Patil, Sandip Lashkare, Veeresh Deshpande and Udayan Ganguly

IEEE Trans. Electron Devices, 2023, 70, 6034
DOI: 10.1109/TED.2023.3319278

Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films

Kisung Chae, Jeongwoon Hwang, Evgueni Chagarov, Andrew Kummel and Kyeongjae Cho

Journal of Applied Physics, 2020, 128
DOI: 10.1063/5.0011547

Origin of ferroelectricity in magnesium-doped zinc oxide

Jiawei Huang, Yihao Hu and Shi Liu

Phys. Rev. B, 2022, 106
DOI: 10.1103/PhysRevB.106.144106

A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective

Ju Yong Park, Kun Yang, Dong Hyun Lee, Se Hyun Kim, Younghwan Lee, P. R. Sekhar Reddy, Jacob L. Jones and Min Hyuk Park

Journal of Applied Physics, 2020, 128
DOI: 10.1063/5.0035542

Engineering Metastability in Atomic Layer Deposition: Polymorph and Valence Control

Jihoon Jeon, Seung Ho Ryu, Seungwan Ye, Gwang Min Park and Seong Keun Kim

Small, 2026, 22
DOI: 10.1002/smll.202511297

HfO2-based ferroelectrics: From enhancing performance, material design, to applications

Haiyan Chen, Xuefan Zhou, Lin Tang, Yonghong Chen, Hang Luo, Xi Yuan, Chris R. Bowen and Dou Zhang

Applied Physics Reviews, 2022, 9
DOI: 10.1063/5.0066607

Ultrathin Sub-5-nm Hf₁₋ₓZrₓO₂ for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate

Shen-Yang Lee, Chia-Chin Lee, Yi-Shan Kuo, Shou-Wei Li and Tien-Sheng Chao

IEEE J. Electron Devices Soc., 2021, 9, 236
DOI: 10.1109/JEDS.2021.3056438

An Overview of Ferroelectric Hafnia and Epitaxial Growth

Jing Cao, Shu Shi, Yao Zhu and Jingsheng Chen

Physica Rapid Research Ltrs, 2021, 15
DOI: 10.1002/pssr.202100025

Regulating ferroelectricity in Hf0.5Zr0.5O2 thin films: Exploring the combined impact of oxygen vacancy and electrode stresses

Mingkai Bai, Peizhen Hong, Runhao Han, Junshuai Chai, Bao Zhang, Jingwen Hou, Wenjuan Xiong, Shuai Yang, Jianfeng Gao, Feng Luo and Zongliang Huo

Journal of Applied Physics, 2023, 134
DOI: 10.1063/5.0170657

Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C)

Saifei Dai, Junshuai Chai, Jiahui Duan, Jinjuan Xiang, Kai Han, Yanrong Wang, Hao Xu, Jing Zhang, Xiaolei Wang and Wenwu Wang

IEEE Trans. Electron Devices, 2024, 71, 5150
DOI: 10.1109/TED.2024.3418372

Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf₀.₅Zr₀.₅O₂ Utilizing Schottky Emission Current in Switchable Diode

Kyumin Lee, Sang-Ho Oh, Hojung Jang, Sunhyeong Lee, Byeong-Joo Lee and Hyunsang Hwang

IEEE Electron Device Lett., 2024, 45, 2078
DOI: 10.1109/LED.2024.3451968

Solution processed high performance ferroelectric Hf0.5Zr0.5O2 thin film transistor on glass substrate

Md. Mehedi Hasan, Chang Won Ahn, Tae Heon Kim and Jin Jang

Applied Physics Letters, 2021, 118
DOI: 10.1063/5.0035653

Low‐Temperature Nanosecond Laser Process of HZO‐IGZO FeFETs toward Monolithic 3D System on Chip Integration

Dongsu Kim, Heejae Jeong, Goeun Pyo, Su Jin Heo, Seunghun Baik, Seonhyoung Kim, Hong Soo Choi, Hyuk‐Jun Kwon and Jae Eun Jang

Advanced Science, 2024, 11
DOI: 10.1002/advs.202401250

Review on the Microstructure of Ferroelectric Hafnium Oxides

Maximilian Lederer, David Lehninger, Tarek Ali and Thomas Kämpfe

Physica Rapid Research Ltrs, 2022, 16
DOI: 10.1002/pssr.202200168

Boost of orthorhombic population with amorphous SiO2 interfacial layer—a DFT study

Yun-Wen Chen and C W Liu

Semicond. Sci. Technol., 2022, 37, 05LT01
DOI: 10.1088/1361-6641/ac5a5e

Visualizing Ferroelectric Uniformity of Hf1–xZrxO2 Films Using X-ray Mapping

Shu-Jui Chang, Chih-Yu Teng, Yi-Jan Lin, Tsung-Mu Wu, Min-Hung Lee, Bi-Hsuan Lin, Mau-Tsu Tang, Tai-Sing Wu, Chenming Hu, Ethan. Ying-Tsan Tang and Yuan-Chieh Tseng

ACS Appl. Mater. Interfaces, 2021, 13, 29212
DOI: 10.1021/acsami.1c08265