Yttrium Doping Stabilizes the Structure of Ni3(NO3)2(OH)4 Cathodes for Application in Advanced Ni-Zn Batteries

Abstract

Ni3(NO3)2(OH)4 has a high theoretical specific capacitance, low cost, and environmental friendliness, making it a promising electrode material. Specifically, Ni3(NO3)2(OH)4 electrodes have a larger layer spacing (c = 6.898 Å) than Ni(OH)2 electrodes since NO3– has a much larger ionic radius than OH–. The larger layer spacing stores more electrolyte ions, significantly improving the electrochemical activity of the electrodes. Additionally, the interlayer NO3– can enhance the Ni3(NO3)2(OH)4 structure stability. However, since Ni3(NO3)2(OH)4 has a higher molar mass than Ni(OH)2, it has a lower theoretical specific capacity. Consequently, Ni3(NO3)2(OH)4 has not been used in zinc-based alkaline batteries. Studies showed that doping could enhance the electrochemical performance of electrode materials. Therefore, this study used a simple solvothermal reaction to synthesize yttrium-doped Ni3(NO3)2(OH)4 (Y-Ni3(NO3)2(OH)4), assembling a Y-Ni3(NO3)2(OH)4//Zn battery for electrochemical testing. Y-Ni3(NO3)2(OH)4 served as the cathode in the battery. The analysis of Y-Ni3(NO3)2(OH)4 that yttrium (Y) doping increased the specific surface area and pore size of Ni3(NO3)2(OH)4 significantly. The increased specific surface area improved the active material utilization, and the abundant mesopores facilitated OH– transport, substantially enhancing the battery's specific capacity and energy density. Ultimately, the specific discharge capacity of the advanced Y-Ni3(NO3)2(OH)4//Zn battery reached 177.97 mAh/g at 4 A/g current density, nearly doubling the capacity of the earlier Ni3(NO3)2(OH)4//Zn battery (103.59 mAh/g).

Supplementary files

Article information

Article type
Paper
Submitted
09 Մյս 2024
Accepted
12 Հլս 2024
First published
08 Օգս 2024

Nanoscale, 2024, Accepted Manuscript

Yttrium Doping Stabilizes the Structure of Ni3(NO3)2(OH)4 Cathodes for Application in Advanced Ni-Zn Batteries

X. Feng, S. Zhang, J. Li, Y. Hu, R. Ge, Y. Shi, Y. Yao, B. Yin and T. Ma, Nanoscale, 2024, Accepted Manuscript , DOI: 10.1039/D4NR02011A

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