Issue 37, 2022

Diamond surface engineering for molecular sensing with nitrogen—vacancy centers

Abstract

Quantum sensing using optically addressable atomic-scale defects, such as the nitrogen-vacancy (NV) center in diamond, provides new opportunities for sensitive and highly localized characterization of chemical functionality. Notably, near-surface defects facilitate detection of the minute magnetic fields generated by nuclear or electron spins outside of the diamond crystal, such as those in chemisorbed and physisorbed molecules. However, the promise of NV centers is hindered by a severe degradation of critical sensor properties, namely charge stability and spin coherence, near surfaces (< ca. 10 nm deep). Moreover, applications in the chemical sciences require methods for covalent bonding of target molecules to diamond with robust control over density, orientation, and binding configuration. This forward-looking Review provides a survey of the rapidly converging fields of diamond surface science and NV-center physics, highlighting their combined potential for quantum sensing of molecules. We outline the diamond surface properties that are advantageous for NV-sensing applications, and discuss strategies to mitigate deleterious effects while simultaneously providing avenues for chemical attachment. Finally, we present an outlook on emerging applications in which the unprecedented sensitivity and spatial resolution of NV-based sensing could provide unique insight into chemically functionalized surfaces at the single-molecule level.

Graphical abstract: Diamond surface engineering for molecular sensing with nitrogen—vacancy centers

Article information

Article type
Review Article
Submitted
28 Մրտ 2022
Accepted
06 Օգս 2022
First published
01 Սպտ 2022
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2022,10, 13533-13569

Diamond surface engineering for molecular sensing with nitrogen—vacancy centers

E. Janitz, K. Herb, L. A. Völker, W. S. Huxter, C. L. Degen and J. M. Abendroth, J. Mater. Chem. C, 2022, 10, 13533 DOI: 10.1039/D2TC01258H

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