Achieving low dielectric constant and high thermal conductivity polymer composites by using larger POSS functionalized boron nitride nanosheets

Abstract

Low dielectric constant (low-k) polymer composites with high thermal conductivity hold significant potential for applications in high-frequency communication and high-power-density electronic devices. The incorporation of fillers with high thermal conductivity can effectively enhance the thermal conductivity of polymers, but it often leads to an increase in the k value. Herein, a series of novel nanofillers were developed by chemically grafting polyhedral oligomeric silsesquioxanes (POSS) with different cage sizes (i.e., T8, T10, and T12 POSS) onto the surface of boron nitride nanosheets. These fillers were then uniformly dispersed into poly(dicyclopentadiene) (PDCPD) via reactive blending, resulting in the fabrication of thermally conductive yet low-k polymer nanocomposites. The results demonstrate that increasing the filler content, particularly the POSS cage size, enhances the material’s free volume, resulting in a reduction in the k value. Additionally, the materials exhibit significantly improved thermal conductivity and comprehensive properties. Consequently, a material with low k value of 2.39, dielectric loss of 0.0035, thermal conductivity of 2.34 W m-1 K-1 (a remarkable enhancement by 780% compared to pure PDCPD), coefficient of thermal expansion of 48.1 ppm oC-1, excellent thermal stability, and hydrophobicity was achieved. This study not only provides new insights for addressing the well-known trade-off between low k and high thermal conductivity but also offers promising materials for future electronic packaging.

Supplementary files

Article information

Article type
Paper
Submitted
18 júl. 2024
Accepted
09 aug. 2024
First published
09 aug. 2024

J. Mater. Chem. A, 2024, Accepted Manuscript

Achieving low dielectric constant and high thermal conductivity polymer composites by using larger POSS functionalized boron nitride nanosheets

M. Nie, J. Wang, Q. Zhang, D. Han and Q. Fu, J. Mater. Chem. A, 2024, Accepted Manuscript , DOI: 10.1039/D4TA04966G

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