Issue 9, 2024

Control of positive and negative photo- and thermal-responses in a single PbI2@CH3NH3PbI3 micro/nanowire-based device for real-time sensing, nonvolatile memory, and logic operation

Abstract

CH3NH3PbI3 has shown great potential for photodetectors and photovoltaic devices due to its excellent positive response to visible light. However, its real-time response characteristics hinder its application in optical memory and logic operation; moreover, the presence of excessive PbI2 is a double-edged sword. Herein, we constructed a dual-terminal device using a single CH3NH3PbI3 micro/nanowire with two Ag electrodes, and then in situ introduced PbI2 quantum dots (QDs) as hole trap centres by thermal decomposition at 160 °C. An anomalous negative photoconductivity (NPC) effect for sub-bandgap light below the PbI2 bandgap is obtained. Importantly, an electrically erasable nonvolatile photomemory can be realized. Furthermore, the device also exhibits an abnormal positive thermal resistance (PTR)-related thermomemory effect, and the thermal-induced high-resistance state (HRS) can be erased by a large bias or an illumination of 365 nm super-bandgap UV light. Additionally, logical “OR” gate operations are achieved through a combination of 650 nm sub-bandgap light and a 70 °C temperature-induced HRS, as well as a large bias and 365 nm super-bandgap light-triggered low-resistance state. These effects are attributed to the excitation and injection of holes in QDs and structural defect traps. This multifunctional device, integrating real-time sensing, nonvolatile memory, and logical operation, holds significant potential for novel electronic and optoelectronic applications.

Graphical abstract: Control of positive and negative photo- and thermal-responses in a single PbI2@CH3NH3PbI3 micro/nanowire-based device for real-time sensing, nonvolatile memory, and logic operation

Article information

Article type
Communication
Submitted
22 sij 2024
Accepted
22 vlj 2024
First published
23 vlj 2024

Mater. Horiz., 2024,11, 2258-2270

Control of positive and negative photo- and thermal-responses in a single PbI2@CH3NH3PbI3 micro/nanowire-based device for real-time sensing, nonvolatile memory, and logic operation

R. Gou, S. Zhou, C. Shi, Q. Sun, Z. Huang, J. Zhao, Y. Xiao, S. Lei and B. Cheng, Mater. Horiz., 2024, 11, 2258 DOI: 10.1039/D4MH00070F

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