Issue 36, 2020

Enlightening gallium nitride-based UV photodetectors

Abstract

This article highlights the emerging demand for gallium nitride (GaN) semiconductor technology that offers superior optoelectronic properties making it suitable for highly efficient ultraviolet (UV) photodetection devices. An overview of the required physical mechanisms and a background review of the latest approaches for highly responsive GaN-based UV photodetectors are compiled and the future perspective for optoelectronic devices is discussed. It was proposed that the GaN subfield is directed towards integration with two-dimensional materials for futuristic applications. Finally, this article provides open questions for future researchers and suggests a direction for possible solutions to the problems faced during the development of highly efficient optoelectronic devices.

Graphical abstract: Enlightening gallium nitride-based UV photodetectors

Article information

Article type
Perspective
Submitted
07 जुलाई 2020
Accepted
29 जुलाई 2020
First published
31 जुलाई 2020

J. Mater. Chem. C, 2020,8, 12348-12354

Enlightening gallium nitride-based UV photodetectors

N. Aggarwal and G. Gupta, J. Mater. Chem. C, 2020, 8, 12348 DOI: 10.1039/D0TC03219K

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements