Issue 46, 2022

Significant improvement in high-temperature energy storage performance of polymer dielectrics via constructing a surface polymer carrier trap layer

Abstract

Polymer dielectrics are preferred materials for high-energy-storage metalized film capacitors. However, the state-of-the-art commercial capacitor dielectrics represented by biaxially oriented polypropylene (BOPP) can hardly fulfill the practical requirements of the harsh operating environments of electronics and electrical-power equipment. In this work, a facile, high-efficiency strategy is proposed for fabricating polymeric films with excellent high-temperature capacitive performance. This strategy involves coating the surface of BOPP films with parylene polymers by chemical vapor deposition. The addition of a parylene polymer layer with deep trap energy levels and high melting temperatures significantly improves the temperature resistance of BOPP and effectively suppresses leakage current, resulting in excellent capacitive properties at elevated temperatures and high electric fields. The maximum discharged energy density (Ue) of the modified BOPP films is 10.10 J cm−3 with a charge–discharge efficiency (η) > 90% at 30 °C, and it reaches 5.52 J cm−3 with an η of over 90% at 120 °C. This method offers unprecedented opportunities for the development of scalable polymer dielectrics with high energy storage and low loss at high temperatures due to its non-damaging nature, precise thickness control, low temperature, and readily scaled-up conformal deposition.

Graphical abstract: Significant improvement in high-temperature energy storage performance of polymer dielectrics via constructing a surface polymer carrier trap layer

Supplementary files

Article information

Article type
Paper
Submitted
14 सितम्बर 2022
Accepted
06 नवम्बर 2022
First published
07 नवम्बर 2022

J. Mater. Chem. A, 2022,10, 24611-24619

Significant improvement in high-temperature energy storage performance of polymer dielectrics via constructing a surface polymer carrier trap layer

J. Xiong, X. Fan, D. Long, B. Zhu, X. Zhang, J. Lu, Y. Xie and Z. Zhang, J. Mater. Chem. A, 2022, 10, 24611 DOI: 10.1039/D2TA07214A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements