Issue 38, 2017

Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure

Abstract

To enhance the low hole mobility (∼40 cm2 V−1 s−1) of InSe monolayer, a novel two-dimensional (2D) van der Waals heterostructure made of InSe and black phosphorus (BP) monolayers with high hole mobility (∼103 cm2 V−1 s−1) has been constructed and its structural and electronic properties are investigated using first-principles calculations. We find that the InSe/BP heterostructure exhibits a direct band gap of 1.39 eV and type-II band alignment with electrons (holes) located in the InSe (BP) layer. The band offsets of InSe and BP are 0.78 eV for the conduction band minimum and 0.86 eV for the valence band maximum, respectively. Surprisingly, the hole mobility in the InSe/BP heterostructure exceeds 104 cm2 V−1 s−1, which is one order of magnitude larger than the hole mobility of BP and three orders larger than that of the InSe monolayer. The electron mobility is also increased to 3 × 103 cm2 V−1 s−1. The physical reason has been analyzed deeply, and a universal method is proposed to improve the carrier mobility of 2D materials by forming heterostructures with them and other 2D materials with complementary properties. The InSe/BP heterostructure can thus be widely used in nanoscale InSe-based field-effect transistors, photodetectors and photovoltaic devices due to its type-II band alignment and high carrier mobility.

Graphical abstract: Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure

Article information

Article type
Paper
Submitted
17 अप्रैल 2017
Accepted
07 सितम्बर 2017
First published
08 सितम्बर 2017

Nanoscale, 2017,9, 14682-14689

Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure

Y. Ding, J. Shi, C. Xia, M. Zhang, J. Du, P. Huang, M. Wu, H. Wang, Y. Cen and S. Pan, Nanoscale, 2017, 9, 14682 DOI: 10.1039/C7NR02725G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements