Issue 31, 2016

Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells

Abstract

Recent progress has shown that low-temperature processed tin oxide (SnO2) is an excellent electron selective layer (ESL) material for fabricating highly efficient organic–inorganic metal-halide perovskite solar cells with a planar cell structure. Low-temperature processing and a planar cell structure are desirable characteristics for large-scale device manufacturing due to their associated low costs and processing simplicity. Here, we report that plasma-enhanced atomic layer deposition (PEALD) is able to lower the deposition temperature of SnO2 ESLs to below 100 °C and still achieve high device performance. With C60-self-assembled monolayer passivation, our PEALD SnO2 ESLs deposited at ∼100 °C led to average power conversion efficiencies higher than 18% (maximum of 19.03%) and 15% (maximum of 16.80%) under reverse voltage scan for solar cells fabricated on glass and flexible polymer substrates, respectively. Our results thus demonstrate the potential of the low-temperature PEALD process of SnO2 ESLs for large-scale manufacturing of efficient perovskite solar cells.

Graphical abstract: Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells

Supplementary files

Article information

Article type
Paper
Submitted
31 मई 2016
Accepted
09 जुलाई 2016
First published
11 जुलाई 2016

J. Mater. Chem. A, 2016,4, 12080-12087

Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells

C. Wang, D. Zhao, C. R. Grice, W. Liao, Y. Yu, A. Cimaroli, N. Shrestha, P. J. Roland, J. Chen, Z. Yu, P. Liu, N. Cheng, R. J. Ellingson, X. Zhao and Y. Yan, J. Mater. Chem. A, 2016, 4, 12080 DOI: 10.1039/C6TA04503K

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements