Issue 2, 2015

Soluble polycyclosilane–polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivity

Abstract

A polycyclosilane precursor was synthesized to develop soluble silicon materials and silicon thin films with optical properties at 193 nm, high silicon content, and etch selectivity for O2 and CFx plasmas. A new class of polycyclosilane–polysiloxane hybrid materials and their thin films exhibited good etch selectivity and good optical properties at 193 nm without organic absorbents.

Graphical abstract: Soluble polycyclosilane–polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivity

Supplementary files

Article information

Article type
Communication
Submitted
27 अगस्त 2014
Accepted
09 नवम्बर 2014
First published
12 नवम्बर 2014

J. Mater. Chem. C, 2015,3, 239-242

Author version available

Soluble polycyclosilane–polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivity

S. J. Park, H. M. Cho, M. E. Lee, M. Kim, K. Han, S. Hong, S. Lim, H. Lee, B. Hwang, S. K. Kim, S. Shim, P. Kang and M. Choi, J. Mater. Chem. C, 2015, 3, 239 DOI: 10.1039/C4TC01917B

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements