Issue 28, 2023

Electronic transport and polarization-dependent photoresponse in few-layered hafnium trisulfide (HfS3) nanoribbons

Abstract

We report on the electrical and optoelectronic characterization of field-effect transistor (FET) devices based on few-layered HfS3 nanoribbons that were mechanically exfoliated from bulk crystals. According to theoretical calculations, bulk HfS3 crystals require small energies for exfoliation along the (001) planes that are comparable to the cleavage energies of graphene layers from graphite. If measured in air, the devices show a p-type response, which is likely caused by physisorbed and chemisorbed oxygen species. In a vacuum, the devices exhibit n-type conductivity and a large photoresponse to white light and several lasers with wavelengths in the visible range of the spectrum. The device photocurrent exhibited a strong dependence on the direction of polarization, which is related to the highly anisotropic quasi-1D crystal structure of HfS3. Optical absorption spectroscopy indicates a direct optical band gap of about 2.3 eV and an indirect band gap of about 2 eV. The indirect gap is supported by the band structure that was calculated using density functional theory (DFT). According to the DFT results, direct and indirect band gaps are present in both monolayered and few-layered HfS3 crystals and decrease with an increase in the number of layers. The absence of strong photovoltaic charging in X-ray photoemission indicates mobile hole carriers. The effect supports the contention that in the presence of light, the photocarriers include both electrons and holes, hence enhancing the photocurrent of the devices. X-ray absorption spectroscopy indicates the S-p–Hf-d hybridization at the conduction band minimum, which is consistent with the calculated band structure.

Graphical abstract: Electronic transport and polarization-dependent photoresponse in few-layered hafnium trisulfide (HfS3) nanoribbons

Supplementary files

Article information

Article type
Paper
Submitted
03 מרץ 2023
Accepted
25 מאי 2023
First published
29 יונ 2023

J. Mater. Chem. C, 2023,11, 9425-9437

Author version available

Electronic transport and polarization-dependent photoresponse in few-layered hafnium trisulfide (HfS3) nanoribbons

A. Lipatov, J. Abourahma, G. Viswan, K. Acharya, T. R. Paudel, M. J. Loes, S. Bagheri, A. T. N'Diaye, E. Mishra, T. K. Ekanayaka, M. Zaz, J. Rodenburg, A. Dhingra, R. Streubel, P. A. Dowben and A. Sinitskii, J. Mater. Chem. C, 2023, 11, 9425 DOI: 10.1039/D3TC00773A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements