Issue 25, 2021

Fabrication of a γ-In2Se3/Si heterostructure phototransistor for heart rate detection

Abstract

A γ-In2Se3/Si heterostructure phototransistor with a broadened photoresponse has been developed, presenting a responsivity, specific detectivity and response speed of 10.24 A W−1, 8.63 × 1012 Jones and 0.76/0.85 ms (rise time/fall time) at 450 nm, respectively. The high responsivity could be attributed to the depressed dark current of the γ-In2Se3 nanofilm and the high gain arising from the gating effect of the phototransistor. Further analysis reveals that the relatively high responsivity and fast response speed facilitate the application of the device in real-time and accurate health monitoring, such as heart rate detection.

Graphical abstract: Fabrication of a γ-In2Se3/Si heterostructure phototransistor for heart rate detection

Supplementary files

Article information

Article type
Communication
Submitted
21 אפר 2021
Accepted
09 יונ 2021
First published
10 יונ 2021

J. Mater. Chem. C, 2021,9, 7888-7892

Fabrication of a γ-In2Se3/Si heterostructure phototransistor for heart rate detection

Y. Zhang, M. Wang, K. Cao, C. Wu, C. Xie, Y. Zhou and L. Luo, J. Mater. Chem. C, 2021, 9, 7888 DOI: 10.1039/D1TC01837J

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