Issue 5, 2020

Ultra-low thermal conductivity and high thermoelectric performance of two-dimensional triphosphides (InP3, GaP3, SbP3 and SnP3): a comprehensive first-principles study

Abstract

By performing first-principles calculations combined with the Boltzmann transport equation, we report a comprehensive study of the thermal and thermoelectric properties of monolayer triphosphides InP3, GaP3, SbP3 and SnP3. Firstly, we studied the structure and phonon dispersion, and discussed the long-range atomic interactions by analyzing the second-order interatomic force constants (IFCs). Next, we predicted the corresponding thermal conductivities of monolayer InP3, GaP3, SbP3 and SnP3 at 300 K to be 0.64 W m−1 K−1, 3.02 W m−1 K−1, 1.04 W m−1 K−1 and 0.48 W m−1 K−1, respectively. To study the thermoelectric properties, the carrier mobility and electron relaxation time of the four materials were predicted by the deformation potential theory method and explained by analyzing their energy band structures. Then, the Seebeck coefficient, electrical conductivity and thermoelectric figure of merit (ZT) at different temperatures were calculated by using the Boltzmann transport equation with relaxation time approximation. Finally, we predicted the maximum ZT values of InP3, GaP3, SbP3 and SnP3 to be up to 2.6, 0.9, 1.9 and 3.7 at 300 K and up to 4.6, 1.6, 3.5 and 6.1 at 500 K, respectively. With ultra-low thermal conductivity and high thermoelectric performance, monolayer triphosphides are considered as potential candidates for thermoelectric materials.

Graphical abstract: Ultra-low thermal conductivity and high thermoelectric performance of two-dimensional triphosphides (InP3, GaP3, SbP3 and SnP3): a comprehensive first-principles study

Supplementary files

Article information

Article type
Paper
Submitted
09 אוק 2019
Accepted
30 דצמ 2019
First published
31 דצמ 2019

Nanoscale, 2020,12, 3330-3342

Ultra-low thermal conductivity and high thermoelectric performance of two-dimensional triphosphides (InP3, GaP3, SbP3 and SnP3): a comprehensive first-principles study

Z. Sun, K. Yuan, Z. Chang, S. Bi, X. Zhang and D. Tang, Nanoscale, 2020, 12, 3330 DOI: 10.1039/C9NR08679J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements