Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

Abstract

Semiconductor nanowires are considered as one of the most promising candidates for next-generation devices due to their unique quasi-one-dimensional structures and novel physical properties. In recent years, advanced heterostructures have been developed by combining nanowires with low-dimensional structures such as quantum wells, quantum dots, and two-dimensional materials. Those heterodimensional structures overcome the limitations of homogeneous nanowires and show great potential in high-performance nano-optoelectronic devices. In this review, we summarize and discuss recent advances in fabrication, properties and applications of nanowire heterodimensional structures. Major heterodimensional structures including nanowire/quantum well, nanowire/quantum dot, and nanowire/2D-material are studied. Representative optoelectronic devices including lasers, single photon sources, light emitting diodes, photodetectors, and solar cells are introduced in detail. Related prospects and challenges are also discussed.

Graphical abstract: Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

Article information

Article type
Review Article
Submitted
07 אוג 2024
Accepted
22 אוק 2024
First published
22 אוק 2024

Nanoscale Horiz., 2024, Advance Article

Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

X. Yan, Y. Li and X. Zhang, Nanoscale Horiz., 2024, Advance Article , DOI: 10.1039/D4NH00385C

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