Issue 10, 2023

Halide perovskite photoelectric artificial synapses: materials, devices, and applications

Abstract

In recent years, there has been a research boom on halide perovskites (HPs) whose outstanding performance in photovoltaic and optoelectronic fields is obvious to all. In particular, HP materials find application in the development of artificial synapses. HP-based synapses have great potential for artificial neuromorphic systems, which is due to their outstanding optoelectronic properties, femtojoule-level energy consumption, and simple fabrication process. In this review, we present the physical properties of HPs and describe two types of synaptic devices including two-terminal (2T) memristors and three-terminal (3T) transistors. The HP layer in 2T memristors can realize the change in the device conductance through physical mechanisms dominated by ion migration. On the other hand, HPs in 3T transistors can be used as efficient light-absorbing layers and rely on some special device structures to provide reliable current changes. In the final section of the article, we discuss some of the existing applications of HP-based synapses and bottlenecks to be solved.

Graphical abstract: Halide perovskite photoelectric artificial synapses: materials, devices, and applications

Article information

Article type
Review Article
Submitted
16 נוב 2022
Accepted
07 פבר 2023
First published
07 פבר 2023

Nanoscale, 2023,15, 4653-4668

Halide perovskite photoelectric artificial synapses: materials, devices, and applications

Z. Xue, Y. Xu, C. Jin, Y. Liang, Z. Cai and J. Sun, Nanoscale, 2023, 15, 4653 DOI: 10.1039/D2NR06403K

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