Issue 10, 2010

Self-aligned nanolithography by selective polymer dissolution

Abstract

We report a novel approach to the fabrication of self-aligned nanoscale trench structures in a thin polymer layer covering on conductive materials. By passing AC current through a polymer-coated nanowire in the presence of an appropriate solvent, a self-aligned nanotrench is formed in the polymer overlayer as a result of accelerated dissolution while the rest of the device remains covered. Similar results have been achieved for polymer-coated graphene ribbons. Such polymer-protected devices in which only the active component is exposed should find important applications as electrical sensors in aqueous solutions, particularly in cases where parasitic ionic currents often obscure sensing signals.

Graphical abstract: Self-aligned nanolithography by selective polymer dissolution

Supplementary files

Article information

Article type
Paper
Submitted
09 יונ 2010
Accepted
31 יול 2010
First published
09 ספט 2010

Nanoscale, 2010,2, 2302-2306

Self-aligned nanolithography by selective polymer dissolution

H. Zhang, C. Wong, Y. Hao, R. Wang, X. Liu, F. Stellacci and J. T. L. Thong, Nanoscale, 2010, 2, 2302 DOI: 10.1039/C0NR00398K

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