Issue 35, 2021

Fully-printed flexible n-type tin oxide thin-film transistors and logic circuits

Abstract

In this study, we achieved fully-printed flexible n-type tin oxide (SnO2) thin-film transistors (TFTs) and logic inverters. The SnO2 transistors exhibit outstanding performance with high saturation mobility of 13.3 cm2 V−1 s−1, small subthreshold swing (SS) of 130 mV dec−1, large current on/off ratio (Ion/Ioff) of >105, low turn-on voltage (Von) of −0.04 V, and enhancement-mode operations (threshold voltage, Vth = 0.14 V). Moreover, the devices exhibited excellent electrical stability under positive bias stress (PBTS, ΔVth = 0.16 V) and negative bias stress (NBIS, ΔVth = −0.18 V) after 10000 s voltage bias tests. The thickness-dependent bandgap widening together with TFT performance in SnO2 thin films were also studied, illustrating that the nanometer-thin channel thickness played an important role in determining the switching performance of SnO2 TFTs. Furthermore, the fully-printed SnO2 TFTs exhibited robust mechanical flexibility with the minimum bending radius of 0.5 cm, promising for constructing advanced low-cost electronic devices and circuits.

Graphical abstract: Fully-printed flexible n-type tin oxide thin-film transistors and logic circuits

Supplementary files

Article information

Article type
Communication
Submitted
01 אפר 2021
Accepted
14 מאי 2021
First published
14 מאי 2021

J. Mater. Chem. C, 2021,9, 11662-11668

Fully-printed flexible n-type tin oxide thin-film transistors and logic circuits

K. Liang, H. Ren, D. Li, Y. Wang, Y. Tang, M. Zhao, H. Wang, W. Li and B. Zhu, J. Mater. Chem. C, 2021, 9, 11662 DOI: 10.1039/D1TC01512E

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