The Influence of Different Nanoscale Channel Lengths in Low-Temperature-Grown Lateral MoS2 Memristors

Danyun Wang, Daquan Yu, Hongyu Chen, Caiyuan Zhao, Xinyi Chen and Miao Lu

ACS Appl. Mater. Interfaces, 2025, 17, 69719
DOI: 10.1021/acsami.5c21337

Tuning of photoinduced resistive switching characteristics of MoS2/PVA photomemristor via ultrasonication

Krishma Anand, Ravneet Kaur and S.K. Tripathi

Journal of Alloys and Compounds, 2025, 1020, 179307
DOI: 10.1016/j.jallcom.2025.179307

Toward Advancement of Fabrication Techniques of Neuromorphic Computing Devices Based on 2D Materials

Shubham Umeshkumar Gupta, Malkeshkumar Patel, Naveen Kumar, László Pohl, Min‐Joon Park, Sung‐Min Youn, Chaewhan Jeong and Joondong Kim

Adv Materials Technologies, 2025, 10
DOI: 10.1002/admt.202500786

Controlled growth of Large-Area 2D palladium diselenide with tunable electronic properties for optoelectronics and artificial synapses devices

Mingqiang Liu, Xuefei Liu, Wenjun Xiao, Gang Wang, Degui Wang, Changsong Gao, Yan Wu, Zhen Wang, Abuduwayiti Aierken and Jinshun Bi

Journal of Colloid and Interface Science, 2025, 694, 137683
DOI: 10.1016/j.jcis.2025.137683

Near-infrared-detectable artificial synapses for advanced neuromorphic vision applications

Minjun Choi, Gwoncheol Choi, Seungbeom Lee, Tae-Woo Lee and Hea-Lim Park

J. Phys. Mater., 2025, 8, 042001
DOI: 10.1088/2515-7639/adf35a

Carbon-based memristors for resistive random access memory and neuromorphic applications

Fan Yang, Zhaorui Liu, Xumin Ding, Yang Li, Cong Wang and Guozhen Shen

Chip, 2024, 3, 100086
DOI: 10.1016/j.chip.2024.100086

Nanoions tuned two-dimensional van der Waals materials for information devices

Yanyu Zhang, Xiaojian Zhu, Runsheng Gao, Ziyi Zhang and Run-Wei Li

TIMS, 2026, 4, 100193
DOI: 10.59717/j.xinn-mater.2026.100193

Dielectric-Engineered Monolayer MoS2 Memtransistors for Brain-Inspired Computing with High Recognition Accuracy

Manisha Rajput, Sooyeon Hwang and Atikur Rahman

ACS Appl. Mater. Interfaces, 2025, 17, 55189
DOI: 10.1021/acsami.5c11139

Memory device based on MoS2-polyvinyl alcohol for simulating synaptic behavior

Qi Yuan, Yufei Wang and Yanmei Sun

Sensors and Actuators A: Physical, 2024, 371, 115285
DOI: 10.1016/j.sna.2024.115285

Optimization strategy of the emerging memristors: From material preparation to device applications

Kaiyun Gou, Yanran Li, Honglin Song, Rong Lu and Jie Jiang

iScience, 2024, 27, 111327
DOI: 10.1016/j.isci.2024.111327

Flexible memristors for next-generation electronics: materials, fabrication and applications

Soumyadip Paul, Chinmayee Mandar Mhaskar, René Weißing, Gaurav Pandey, Sangeeta Roy Chaudhuri, Sanjay Mathur and Ayan Roy Chaudhuri

Flex. Print. Electron., 2026, 11, 013002
DOI: 10.1088/2058-8585/ae4ca1

Dedicated and Reconfigurable Artificial Neurons and Synapses based on Two-Dimensional Materials for Efficient Neuromorphic Application

Danke Chen, Peizhi Yu, Yuning Li, Jingwei Shang, Haoyuan Wu, Xuan Yao, Xiaoqiu Tang, Chunlong Li, Mingqiang Zhu, Chang Gao, Jingye Sun, He Tian and Tao Deng

Nano-Micro Lett., 2026, 18
DOI: 10.1007/s40820-026-02139-2

Effects of voltage schemes on the conductance modulation of artificial synaptic device based on 2D hBN memristor: Its applications for pattern classifications

Yooyeon Jo, Gichang Noh, Eunpyo Park, Dae Kyu Lee, YeonJoo Jeong, Heerak Wi and Joon Young Kwak

Chaos, Solitons & Fractals, 2024, 187, 115390
DOI: 10.1016/j.chaos.2024.115390