Electrosynthesis of molecular memory elements

Pradeep Sachan, Anwesha Mahapatra, Lalith Adithya Sai Channapragada, Rajwinder Kaur, Shubham Sahay and Prakash Chandra Mondal

Chem. Sci., 2025, 16, 10990
DOI: 10.1039/D4SC08461F

Emerging van der Waals material CuInP2S6: physical properties, theories and applications

Tian-Xiao Xu, Xiao-Bing Guo, Dan Zhang, Qi-Jun Sun, Yan-Ping Jiang, Qiu-Xiang Liu and Xin-Gui Tang

J. Mater. Chem. A, 2024, 12, 31028
DOI: 10.1039/D4TA05024J

Arbitrary-ordered pulsed programming achieving 11 well-separated programming levels via a multilevel transistor–memristor series configuration

Jing-Ci Gao, Kuan-Han Lin, Wei-Lun Chen, Kai-Shin Hsu, Chi-Chein Chen and Jen-Sue Chen

J. Mater. Chem. C, 2026, 14, 1981
DOI: 10.1039/D5TC03399C

Effect of electron conduction on the read noise characteristics in ReRAM devices

K. Schnieders, C. Funck, F. Cüppers, S. Aussen, T. Kempen, A. Sarantopoulos, R. Dittmann, S. Menzel, V. Rana, S. Hoffmann-Eifert and S. Wiefels

APL Materials, 2022, 10
DOI: 10.1063/5.0109787

Review on Resistive Switching Devices Based on Multiferroic BiFeO3

Xianyue Zhao, Stephan Menzel, Ilia Polian, Heidemarie Schmidt and Nan Du

Nanomaterials, 2023, 13, 1325
DOI: 10.3390/nano13081325

Quantum Conductance in MoO3/TiO2 Heterojunction Memristors: Crafting Controlled Analog-to-Digital Transition for Multilevel Memory Applications

Girish Chandrashekar, Sreelakshmi Madhavanunni Rekha, S. Venkataprasad Bhat and Ramesh Thamankar

ACS Appl. Electron. Mater., 2025, 7, 6290
DOI: 10.1021/acsaelm.5c00341

Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation

Kyunghwan Min, Dongmyung Jung and Yongwoo Kwon

Sci Rep, 2021, 11
DOI: 10.1038/s41598-021-81896-z

Electrical conductivity in oxygen-substituted SrTiO3-δ films

M. Tyunina, M. Savinov and A. Dejneka

Applied Physics Letters, 2021, 119
DOI: 10.1063/5.0072225

Resistive switching studies in VO2 thin films

Abhimanyu Rana, Chuan Li, Gertjan Koster and Hans Hilgenkamp

Sci Rep, 2020, 10
DOI: 10.1038/s41598-020-60373-z

Dielectric Breakdown by Electric-field Induced Phase Separation

Dimitrios Fraggedakis, Mohammad Mirzadeh, Tingtao Zhou and Martin Z. Bazant

J. Electrochem. Soc., 2020, 167, 113504
DOI: 10.1149/1945-7111/aba552

Modeling Photodetection at the Graphene/Ag2S Interface

Davide Spirito, Beatriz Martín-García, Vaidotas Mišeikis, Camilla Coletti, Francesco Bonaccorso and Roman Krahne

Physica Rapid Research Ltrs, 2021, 15
DOI: 10.1002/pssr.202100120

Onset of electronic conductivity in nanometer thick films of yttria stabilized zirconia (YSZ) at high electric fields

J.L. Vazquez-Arce, H. Tiznado and R. Kirchheim

Acta Materialia, 2022, 229, 117826
DOI: 10.1016/j.actamat.2022.117826

Heterogeneous Integration of Graphene and HfO2 Memristors

Urška Trstenjak, Kalle Goß, Alexander Gutsche, Janghyun Jo, Marcus Wohlgemuth, Rafal E. Dunin‐Borkowski, Felix Gunkel and Regina Dittmann

Adv Funct Materials, 2024, 34
DOI: 10.1002/adfm.202309558

Impact of TID on the Analog Conductance and Training Accuracy of CBRAM-Based Neural Accelerator

P. Apsangi, N. Chamele, H. J. Barnaby, Y. Gonzalez-Velo, K. E. Holbert and M. N. Kozicki

IEEE Trans. Nucl. Sci., 2023, 70, 2572
DOI: 10.1109/TNS.2023.3318511

Onset of Electronic Conductivity in Nanometer Thick Films of Yttria Stabilized Zirconia (YSZ) at High Electric Fields

Reiner Kirchheim, Jorge Luis Vázquez Arce and Hugo Tiznado

SSRN Journal, 2021
DOI: 10.2139/ssrn.3981499

Effective Current-Driven Memory Operations for Low-Power ReRAM Applications

Albert Cirera, Blas Garrido, Antonio Rubio and Ioannis Vourkas

IEEE Access, 2023, 11, 51260
DOI: 10.1109/ACCESS.2023.3276825

Effect of conductance linearity of Ag-chalcogenide CBRAM synaptic devices on the pattern recognition accuracy of an analog neural training accelerator

Priyanka Apsangi, Hugh Barnaby, Michael Kozicki, Yago Gonzalez-Velo and Jennifer Taggart

Neuromorph. Comput. Eng., 2022, 2, 021002
DOI: 10.1088/2634-4386/ac6534

Investigation of the Temperature Dependence of Volt-Ampere Characteristics of a Thin-Film Si3N4 Memristor

Dmitry Mizginov, Oleg Telminov, Sergey Yanovich, Dmitry Zhevnenko, Fedor Meshchaninov and Evgeny Gornev

Crystals, 2023, 13, 323
DOI: 10.3390/cryst13020323

Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO x

Shimul Kanti Nath, Sanjoy Kumar Nandi, Shuai Li and Robert Glen Elliman

Nanotechnology, 2020, 31, 235701
DOI: 10.1088/1361-6528/ab7889

Multifunctional double active layers formed with electrochemically controlled nanoparticle dispersion for resistive switching memory arrays

Hee Won Suh, Dong Su Kim, Ji Hoon Choi, Hak Hyeon Lee, Kun Woong Lee, Sung Hyeon Jung, Won Seok Yang, Jeong Jae Kim, Ji Sook Yang, Ho Seong Lee and Hyung Koun Cho

Applied Surface Science, 2023, 608, 155206
DOI: 10.1016/j.apsusc.2022.155206

Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices

Finn Zahari, Eduardo Pérez, Mamathamba Kalishettyhalli Mahadevaiah, Hermann Kohlstedt, Christian Wenger and Martin Ziegler

Sci Rep, 2020, 10
DOI: 10.1038/s41598-020-71334-x

Effect of chemical doping on memristive behavior of VO2 microcrystals

Raju Naik B., Divya Verma and Viswanath Balakrishnan

Applied Physics Letters, 2022, 120
DOI: 10.1063/5.0075566

Filamentary switching of ReRAM investigated by in-situ TEM

Masashi Arita, Atsushi Tsurumaki-Fukuchi and Yasuo Takahashi

Jpn. J. Appl. Phys., 2020, 59, SG0803
DOI: 10.35848/1347-4065/ab709d

SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing

Muhammad Ismail, Chandreswar Mahata, Myounggon Kang and Sungjun Kim

Nanomaterials, 2023, 13, 2603
DOI: 10.3390/nano13182603

Nanosystems, Edge Computing, and the Next Generation Computing Systems

Ali Passian and Neena Imam

Sensors, 2019, 19, 4048
DOI: 10.3390/s19184048

Temperature-dependent resistive switching behavior of a hybrid semiconductor-oxide planar system

S. Majumder, K. Kumari and S. J. Ray

Appl. Phys. A, 2023, 129
DOI: 10.1007/s00339-023-06616-y

Characterization and Application of PVDF and Its Copolymer Films Prepared by Spin-Coating and Langmuir–Blodgett Method

Zerun Yin, Bobo Tian, Qiuxiang Zhu and Chungang Duan

Polymers, 2019, 11, 2033
DOI: 10.3390/polym11122033

Linear Potentiation in Filamentary Valence Change Mechanism With Sub-100 ps Pulses

Faisal Munir, Jari Klinkmann, Pascal Stasner, Siyuan Jia, Rainer Waser and Stefan Wiefels

IEEE Access, 2025, 13, 120762
DOI: 10.1109/ACCESS.2025.3586720

Ferroelectric van der Waals heterostructures of CuInP2S6 for non-volatile memory device applications

Patrick D Taylor, Sherif Abdulkader Tawfik and Michelle J S Spencer

Nanotechnology, 2023, 34, 065701
DOI: 10.1088/1361-6528/aca0a5

The dominant role of electrode‐interfaces in flash induced electronic conductivity of rutile single crystals

Seohyeon Jo, Rishi Raj and Devinder Yadav

J Am Ceram Soc., 2025, 108
DOI: 10.1111/jace.70034

Interfacial Resistive Switching by Multiphase Polarization in Ion-Intercalation Nanofilms

Huanhuan Tian and Martin Z. Bazant

Nano Lett., 2022, 22, 5866
DOI: 10.1021/acs.nanolett.2c01765

Evaluation Methods for ReRAM Potentiation on Sub-Nanosecond Timescales

Faisal Munir, Daniel Schön, Stephan Menzel, Pascal Stasner, Rainer Waser and Stefan Wiefels

IEEE Trans. Electron Devices, 2024, 71, 6691
DOI: 10.1109/TED.2024.3461676

Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K

Kolton Drake, Tonglin Lu, Md. Majumdar and Kristy Campbell

Micromachines, 2019, 10, 663
DOI: 10.3390/mi10100663

Methods of controlling operation modes in Pt/TaO x /Ta2O5/Pt resistive switching cells

Toshiki Miyatani, Yusuke Nishi and Tsunenobu Kimoto

Jpn. J. Appl. Phys., 2022, 61, SM1006
DOI: 10.35848/1347-4065/ac6b12

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

Regina Dittmann, Stephan Menzel and Rainer Waser

Advances in Physics, 2021, 70, 155
DOI: 10.1080/00018732.2022.2084006