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DOI: 10.1039/C6DT90202B (Correction) Dalton Trans., 2016, 45, 18750-18751

Correction: Ga[OSi(OtBu)3]3·THF, a thermolytic molecular precursor for high surface area gallium-containing silica materials of controlled dispersion and stoichiometry

James P. Dombrowski ac, Gregory R. Johnson b, Alexis T. Bell *bc and T. Don Tilley *ac
aDepartment of Chemistry, University of California, Berkeley, Berkeley, California 94720-1460, USA. E-mail: tdtilley@berkeley.edu
bDepartment of Chemical and Biomolecular Engineering, University of California, Berkeley, California 94720-1460, USA
cChemical Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA

Received 2nd November 2016 , Accepted 2nd November 2016

First published on 11th November 2016

Abstract

Correction for ‘Ga[OSi(OtBu)3]3·THF, a thermolytic molecular precursor for high surface area gallium-containing silica materials of controlled dispersion and stoichiometry’ by James P. Dombrowski et al., Dalton Trans., 2016, 45, 11025–11034.

The authors would like to amend the original text, which misinforms regarding the status of related molecular gallium siloxide chemistry, and in the correction this is clarified by the new wording and by citations 1–8. References 10–12 describe important details on previous work using gallium siloxide molecules as precursors to gallium oxide and gallium-containing silica materials which were excluded from the original text. These are critical issues since some gallium siloxide precursors are known to give only gallium oxide and the precursor described here generates gallium-containing silica by a low-temperature thermolysis. The nature of the precursor and the conditions for conversion to the material make a critical difference that is not conveyed in the original wording.

(1) On page 11025, the second sentence of the second paragraph should be:

“However, while complexes containing a Ga–O–Si linkage are well known,1–12 few molecular precursors have been used to generate gallium-containing materials by thermolysis.9–12”

(2) On page 11028, in the third full paragraph, the third sentence should be:

“As described above, there are few reports on the use of gallium siloxide complexes as thermolytic molecular precursors,9–12 and, to the authors’ knowledge, only Wada et al. describe the generation of gallium-silica materials by thermolysis of gallium siloxide molecular precursors (gallium silsesquioxane complexes), but this requires high temperatures for complete elimination of organics.11–12”

(3) On page 11028, in the third full paragraph, the last sentence should read:

“Therefore, development of a well-defined precursor for the low-temperature thermolytic formation of gallium-containing silicas has remained an unrealized goal.”

The following references should be added as included above:

Additional references

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The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

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