Atomic-level revelation of spontaneous polarization orientation and piezoelectricity in ε -Ga2O3

Yan Wang, Zhigao Xie, Yizhang Guan, Jiahe Cao, Yibo Zhang, Guofeng Hu, Yu Bai, Yew Hoong Wong, Guosong Zeng, Zhiqiang Huang and Chee Keong Tan

Applied Physics Letters, 2026, 128
DOI: 10.1063/5.0321241

Strain relaxation in α-(AlxGa1-x)₂O₃ thin films grown on M-plane and R-plane sapphire via metalorganic chemical vapor deposition

Chuang Zhang, Jiahe Cao, Yiying Zhang, Xunpeng Li, Yizhang Guan, Yan Wang, Yimin Liao, Zhigao Xie, Yibo Zhang, Shan Li, Weihua Tang, Guofeng Hu and Chee Keong Tan

Journal of Alloys and Compounds, 2025, 1039, 183079
DOI: 10.1016/j.jallcom.2025.183079

Effect of Selenium Doping on the Electronic Properties of β-Ga2O3 by First-Principles Calculations

Hanzhao Song, Zhigao Xie, Yimin Liao, Yan Wang and Chee-Keong Tan

J. Electron. Mater., 2024, 53, 6282
DOI: 10.1007/s11664-024-11292-6

Composition analysis of β-(In x Ga 1- x ) 2 O 3 thin films coherently grown on (010) β-Ga 2 O 3 via mist CVD

Hiroyuki Nishinaka, Yuki Kajita, Shoma Hosaka and Hiroki Miyake

Science and Technology of Advanced Materials, 2024, 25
DOI: 10.1080/14686996.2024.2414733

High-performance solar-blind UV photodetector based on Ti3C2Tx MXene/α-Ga2O3 heterojunction

Jiahe Cao, Yizhang Guan, Houwei Chen, Zhigao Xie, Yan Wang, Jierui Xue, Andeng Qu, Guofeng Hu, Weihua Tang, Zhiqiang Huang and Chee-Keong Tan

Applied Physics Letters, 2026, 128
DOI: 10.1063/5.0323532

Effect of Acceptor-Type Traps in GaN Buffer Layer on Current Collapse of ε-Ga2O3/GaN HEMTs

Andeng Qu, Zhigao Xie, Yan Wang, Guofeng Hu and Chee-Keong Tan

J. Electron. Mater., 2025, 54, 3086
DOI: 10.1007/s11664-025-11823-9

Tunable electronic properties of κ-(Al, In)2O3/Ga2O3 digital alloys via superlattice design

Jiahe Cao, Zhigao Xie, Yizhang Guan, Yan Wang, Jierui Xue, Zhiqiang Huang, Guosong Zeng and Chee-Keong Tan

Journal of Applied Physics, 2026, 139
DOI: 10.1063/5.0317487

Indium alloying in ε -Ga2O3 for polarization and interfacial charge tuning

Yan Wang, Yizhang Guan, Chuang Zhang, Jiahe Cao, Xuanyan Chen, Qiangqiang Ouyang, Yew Hoong Wong, Guofeng Hu and Chee Keong Tan

Applied Physics Letters, 2025, 126
DOI: 10.1063/5.0245828

Density Functional Theory Study of Polarization-Induced Electron Confinement by Dilute Boron Alloying in ε-Ga2O3 Nanometer-Thick Film for High Electron Mobility Transistor

Yan Wang, Jiahe Cao, Yimin Liao, Chuang Zhang, Zhigao Xie, Hanzhao Song, Jierui Xue, Andeng Qu, Yew Hoong Wong, Zengxia Mei and Chee Keong Tan

ACS Appl. Nano Mater., 2024, 7, 9337
DOI: 10.1021/acsanm.4c00717

Theoretical insights into the interface engineering of β-Ga2O3 devices with ferroelectric HfO2 gate dielectric: Impact of polarization direction

Jinhao Su, Zhaofu Zhang, Qingzhong Gui, Wei Yu, Xuhao Wan, Anyang Wang, Zeyuan Li, Ruyue Cao, John Robertson, Sheng Liu and Yuzheng Guo

Surfaces and Interfaces, 2025, 56, 105703
DOI: 10.1016/j.surfin.2024.105703

Investigation on the structural and electronic property of monoclinic Al2O3/β-Ga2O3 superlattice with varying layer periods

Jiahe Cao, Yan Wang, Chuang Zhang, Guofeng Hu, Weihua Tang, Guosong Zeng, Daniela Gogova and Chee-Keong Tan

Applied Physics Letters, 2025, 126
DOI: 10.1063/5.0252684

Sn-assisted epitaxial growth of high-crystallinity κ/ε-Ga2O3 on sapphire (0001) by low-pressure Mist-CVD

Yan Wang, Zhigao Xie, Yizhang Guan, Chuang Zhang, Yibo Zhang, Jiahe Cao, Zhehan Ying, Guofeng Hu and Chee Keong Tan

Applied Physics Letters, 2025, 127
DOI: 10.1063/5.0280118