Issue 29, 2021

Bias-tunable two-dimensional magnetic and topological materials

Abstract

The search for novel two-dimensional (2D) materials is crucial for the development of next generation technologies such as electronics, optoelectronics, electrochemistry and biomedicine. In this work, we designed a series of 2D materials based on endohedral fullerenes and revealed that many of them integrate different functions in a single system, such as ferroelectricity with large electric dipole moments, multiple magnetic phases with both strong magnetic anisotropy and high Curie temperature, and quantum spin Hall effect or quantum anomalous Hall effect with robust topologically protected edge states. We further proposed a new type of topological field-effect transistor. These findings provide a strategy for using fullerenes as building blocks for the synthesis of novel 2D materials which can be easily controlled with a local electric field.

Graphical abstract: Bias-tunable two-dimensional magnetic and topological materials

Supplementary files

Article information

Article type
Paper
Submitted
27 avr. 2021
Accepted
16 juin 2021
First published
17 juin 2021

Nanoscale, 2021,13, 12513-12520

Author version available

Bias-tunable two-dimensional magnetic and topological materials

J. Li and R. Wu, Nanoscale, 2021, 13, 12513 DOI: 10.1039/D1NR02641K

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