Issue 23, 2017

To probe the performance of perovskite memory devices: defects property and hysteresis

Abstract

Hybrid organic–inorganic perovskite materials offer a range of interesting characteristics that are suitable for optoelectronic devices, such as photovoltaics. Along with the fast rise in device performance, a current density–voltage (JV) hysteresis originating from defects and their movement has attracted intense attention, which renders challenges regarding the stability and reliability of the novel materials. Here, we carefully probe the effects of defects in perovskite materials and across interfaces within the device, in which bistable conductive states are achieved for the next generation of nonvolatile memory. The memory device shows an operating voltage as low as 0.25 V, and a decent ON/OFF ratio. More importantly, we correlate the defect density and hysteresis-index of different perovskite films with the corresponding memory device performance. The findings enrich our understanding of the working mechanism of perovskite memory devices, which will also benefit other organic–inorganic hybrid perovskite optoelectronics.

Graphical abstract: To probe the performance of perovskite memory devices: defects property and hysteresis

Supplementary files

Article information

Article type
Paper
Submitted
17 janv. 2017
Accepted
25 avr. 2017
First published
25 avr. 2017

J. Mater. Chem. C, 2017,5, 5810-5817

To probe the performance of perovskite memory devices: defects property and hysteresis

Z. Xu, Z. Liu, Y. Huang, G. Zheng, Q. Chen and H. Zhou, J. Mater. Chem. C, 2017, 5, 5810 DOI: 10.1039/C7TC00266A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements