Issue 6, 2024

Gradual degradation in InAs quantum dot lasers on Si and GaAs

Abstract

Reliable quantum dot lasers on silicon are a key remaining challenge to successful integrated silicon photonics. In this work, quantum dot (QD) lasers on silicon with and without misfit dislocation trapping layers are aged for 12 000 hours and are compared to QD lasers on native GaAs aged for 8400 hours. The non-trapping-layer (TL) laser on silicon degrades heavily during this time, but much more modest gradual degradation is observed for the other two devices. Electroluminescence imaging reveals relatively uniform gradual dimming for the aged TL laser on silicon. At the same time, we find nanoscale dislocation loop defects throughout the quantum dot-based active region of all three aged lasers via electron microscopy. The Burgers vector of these loops is consistent with Image ID:d3nr05311c-t1.gif. We suggest that the primary source of degradation, however, is the generation and migration of point defects that substantially enhance non-radiative recombination in the active region, the visible symptom of which is the formation of dislocation loops. To prevent this, we propose that laser fabrication should be switched from deeply etched to shallow etch ridges where the active region remains intact near the mesa. Additionally, post-growth annealing and altered growth conditions in the active region should be explored to minimize the grown-in point defect density.

Graphical abstract: Gradual degradation in InAs quantum dot lasers on Si and GaAs

Supplementary files

Article information

Article type
Paper
Submitted
21 oct. 2023
Accepted
27 déc. 2023
First published
22 janv. 2024
This article is Open Access
Creative Commons BY license

Nanoscale, 2024,16, 2966-2973

Gradual degradation in InAs quantum dot lasers on Si and GaAs

E. T. Hughes, C. Shang, J. Selvidge, D. Jung, Y. Wan, R. W. Herrick, J. E. Bowers and K. Mukherjee, Nanoscale, 2024, 16, 2966 DOI: 10.1039/D3NR05311C

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