Issue 2, 2024

Microelectromechanical system for in situ quantitative testing of tension–compression asymmetry in nanostructures

Abstract

Tension–compression asymmetry is a topic of current interest in nanostructures, especially in strain engineering. Herein, we report a novel on-chip microelectromechanical system (MEMS) that can realize in situ quantitative mechanical testing of nanostructures under tension–compression functions. The mechanical properties of three kinds of nanostructures fabricated by focused ion beam (FIB) techniques were systematically investigated with the presented on-chip testing system. The results declare that both Pt nanopillars and C nanowires exhibit plastic deformation behavior under tension testing, with average Young's moduli of 70.06 GPa and 58.32 GPa, respectively. However, the mechanical deformation mechanisms of the two nanostructures changed in compression tests. The Pt nanopillar exhibited in-plane buckling behavior, while the C nanowire displayed 3D twisting behavior with a maximum strain of 25.47%, which is far greater than the tensile strain. Moreover, asymmetric behavior was also observed in the C nanospring during five loading–unloading tension–compression deformation tests. This work provides a novel insight into the asymmetric mechanical properties of nanostructures, with potential applications in nanotechnology research.

Graphical abstract: Microelectromechanical system for in situ quantitative testing of tension–compression asymmetry in nanostructures

Supplementary files

Article information

Article type
Communication
Submitted
18 sept. 2023
Accepted
21 nov. 2023
First published
21 nov. 2023

Nanoscale Horiz., 2024,9, 254-263

Microelectromechanical system for in situ quantitative testing of tension–compression asymmetry in nanostructures

Y. Huang, K. Yin, B. Li, A. Zheng, B. Wu, L. Sun and M. Nie, Nanoscale Horiz., 2024, 9, 254 DOI: 10.1039/D3NH00407D

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements