Issue 6, 2023

Efficient and bright green InP quantum dot light-emitting diodes enabled by a self-assembled dipole interface monolayer

Abstract

The interfacial state between the hole transport layer (HTL) and quantum dots (QDs) plays a crucial role in the optoelectronic performance of light-emitting diodes. Herein, we reported an efficient and bright green indium phosphide (InP) QD-based light-emitting diode (LED) by introducing a self-assembled monolayer of 4-bromo-2-fluorothiophenol (SAM-BFTP) molecule to improve interfacial charge transport in LED devices. The molecular dipole layer at the interface of the QD layer and HTL not only reduces the energy barrier of holes injected into QDs through vacuum energy level shift but also inhibits the fluorescence quenching of QDs caused by the HTL. Moreover, copper ions doped into phosphomolybdic acid (Cu:PMA) is selected as the hole injection layer (HIL) into the device system based on the SAM-BFTP molecule, and as a result, a green InP QD LED (QLED) with a maximum external quantum efficiency (EQE) of 8.46% and a luminance of 18 356 cd m−2 was realized. This work can inform and underpin the future development of InP-based QLEDs with concurrent high efficiency and brightness.

Graphical abstract: Efficient and bright green InP quantum dot light-emitting diodes enabled by a self-assembled dipole interface monolayer

Supplementary files

Article information

Article type
Paper
Submitted
26 nov. 2022
Accepted
05 janv. 2023
First published
06 janv. 2023

Nanoscale, 2023,15, 2837-2842

Efficient and bright green InP quantum dot light-emitting diodes enabled by a self-assembled dipole interface monolayer

L. Li, Y. Luo, Q. Wu, L. Wang, G. Jia, T. Chen, C. Zhang and X. Yang, Nanoscale, 2023, 15, 2837 DOI: 10.1039/D2NR06618A

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