Issue 42, 2021

Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film

Abstract

Flexible aluminium nitride (AlN) films can enable the future preparation of carbon-based nitride devices. We report a novel diffusion–adsorption regulation growth method in the epitaxy of AlN on graphene for high-quality and transferable large-size AlN films. Then, the growth mode of AlN on graphene is summarized in turn as diffusion-dominated, combined-effect, adsorption-dominated and decomposition-dominated. A high-quality and transferable AlN epitaxial layer was obtained by regulating the combination of graphene and AlN. Finally, a flexible 3 × 3 cm2 AlN film with an RMS of 0.748 nm was achieved. The proposed growth mechanism fills the gap in the study of the growth mechanism of AlN on graphene, and will help to explore new methods for the preparation of carbon-based nitride devices based on van der Waals epitaxy-transfer printing, realize substrate selection that does not rely on epitaxial relationships, and provide a revolutionary technology for the development of high-efficiency flexible devices.

Graphical abstract: Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film

Supplementary files

Article information

Article type
Paper
Submitted
28 juil. 2021
Accepted
24 sept. 2021
First published
07 oct. 2021

CrystEngComm, 2021,23, 7406-7411

Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film

Y. Jia, H. Wu, J. Zhao, H. Guo, Y. Zeng, B. Wang, C. Zhang, Y. Zhang, J. Ning, J. Zhang, T. Zhang, D. Wang and Y. Hao, CrystEngComm, 2021, 23, 7406 DOI: 10.1039/D1CE00988E

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements