Issue 11, 2016

High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

Abstract

Ultrathin SnS nanobelts were synthesized via physical vapor deposition (PVD). Furthermore, high performance near-infrared (NIR) photodetectors based on SnS nanobelts showed an excellent photoresponsivity of 300 A W−1 under 800 nm light illumination with an external quantum efficiency of 4.65 × 104% and a detectivity of 6 × 109 Jones, as well as fast rise and decay times (τrise = 36 ms and τdecay = 7 ms), suggesting a promising future for the utilization of the SnS nanobelts in practical NIR light sensors.

Graphical abstract: High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

Supplementary files

Article information

Article type
Communication
Submitted
28 déc. 2015
Accepted
18 févr. 2016
First published
19 févr. 2016

J. Mater. Chem. C, 2016,4, 2111-2116

High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

X. Zhou, L. Gan, Q. Zhang, X. Xiong, H. Li, Z. Zhong, J. Han and T. Zhai, J. Mater. Chem. C, 2016, 4, 2111 DOI: 10.1039/C5TC04410C

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