Issue 40, 2014

Furan fused V-shaped organic semiconducting materials with high emission and high mobility

Abstract

We report a facile synthetic protocol for preparation of dinaphtho[2,3-b:2′,3′-d]furan (DNF–V) derivatives. DNF–V derivatives showed high emissive behaviour in solid. A solution-crystallized transistor based on alkylated DNF–V derivatives showed an excellent carrier mobility of up to 1.3 cm2 V−1 s−1, thereby proving to be a new solution-processable active organic semiconductor with high emission and high mobility.

Graphical abstract: Furan fused V-shaped organic semiconducting materials with high emission and high mobility

Supplementary files

Article information

Article type
Communication
Submitted
02 oct. 2013
Accepted
08 nov. 2013
First published
08 nov. 2013

Chem. Commun., 2014,50, 5342-5344

Furan fused V-shaped organic semiconducting materials with high emission and high mobility

K. Nakahara, C. Mitsui, T. Okamoto, M. Yamagishi, H. Matsui, T. Ueno, Y. Tanaka, M. Yano, T. Matsushita, J. Soeda, Y. Hirose, H. Sato, A. Yamano and J. Takeya, Chem. Commun., 2014, 50, 5342 DOI: 10.1039/C3CC47577H

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements