Optimizing InAsPSb/InAsP cladding structures to control carrier overflow and enhance emission in multiple quantum well LEDs

Dongwan Kim, Phuc Dinh Nguyen, Jiyeon Jeon, Thu Trang Thi Bui, Minkyeong Kim, Jungwon Yoon, Changsug Lee, Byong Sun Chun and Sang Jun Lee

Nanoscale, 2025, 17, 16622
DOI: 10.1039/D5NR01108F

Electroluminescent materials toward near ultraviolet region

Shuo Chen and Hui Xu

Chem. Soc. Rev., 2021, 50, 8639
DOI: 10.1039/D0CS01580F

High responsivity and high speed InGaN-based blue-light photodetectors on Si substrates

Jixing Chai, Deqi Kong, Sheng Chen, Liang Chen, Wengliang Wang and Guoqiang Li

RSC Adv., 2021, 11, 25079
DOI: 10.1039/D1RA04739F

Efficient carrier transport for 368 nm ultraviolet LEDs with a p-AlInGaN/AlGaN short-period superlattice electron blocking layer

Longfei He, Kang Zhang, Hualong Wu, Chenguang He, Wei Zhao, Qiao Wang, Shuti Li and Zhitao Chen

J. Mater. Chem. C, 2021, 9, 7893
DOI: 10.1039/D1TC02191E

Effect of graded Al content in the last quantum barrier on the luminescence properties of ultraviolet InGaN/AlGaN multiple quantum wells

Wei Liu, Junhua Gao and Jie Zhang

Micro and Nanostructures, 2023, 184, 207688
DOI: 10.1016/j.micrna.2023.207688

Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients

Jie Zhang, Wei Liu and Shuyuan Zhang

Crystals, 2021, 11, 1390
DOI: 10.3390/cryst11111390

Improved Optoelectronic Performance of InGaN/AlGaN Near-Ultraviolet LEDs: Effect of n-GaN Thickness

Abu Bashar Mohammad Hamidul Islam, Dong-Soo Shin, Joon Seop Kwak and Jong-In Shim

IEEE Trans. Electron Devices, 2026, 73, 460
DOI: 10.1109/TED.2025.3635074

Optimizing performance and energy consumption in GaN(n)/InxGa1-xN/GaN/AlGaN/GaN(p) light-emitting diodes by quantum-well number and mole fraction

N. Selmane, A. Cheknane, F. Khemloul, H. S. Hilal, M. H. S. Helal and N. Baydogan

DJNB, 2023, 18, 1557
DOI: 10.15251/DJNB.2023.184.1557

Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination

Rinat Yapparov, Cheyenne Lynsky, Shuji Nakamura, James S. Speck and Saulius Marcinkevičius

Appl. Phys. Express, 2020, 13, 122005
DOI: 10.35848/1882-0786/abc856

Engineering the Bandgap and Surface Structure of CsPbCl3 Nanocrystals to Achieve Efficient Ultraviolet Luminescence

Yunqin Zhang, Xiyue Cheng, Datao Tu, Zhongliang Gong, Renfu Li, Yingjie Yang, Wei Zheng, Jin Xu, Shuiquan Deng and Xueyuan Chen

Angew Chem Int Ed, 2021, 60, 9693
DOI: 10.1002/anie.202017370

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Shiqiang Lu, Jinchai Li, Kai Huang, Guozhen Liu, Yinghui Zhou, Duanjun Cai, Rong Zhang and Junyong Kang

Nanoscale Res Lett, 2021, 16
DOI: 10.1186/s11671-021-03557-4

Suppression of hole leakage by increasing thickness of the first AlGaN barrier layer for GaN/AlGaN ultraviolet light-emitting diode

Wei Liu, Shiwei Yuan and Xiaoya Fan

Physics Letters A, 2021, 408, 127471
DOI: 10.1016/j.physleta.2021.127471

Remote Online Two-Step Stress Lifetime Acceleration Test System for Ultraviolet Light-Emitting Diodes

Li-Hong Zhu, Qiu-Wei Zheng, Yu-Jiao Ruan, Wei-Jie Guo, Yu-Lin Gao, Zi-Quan Guo, Yue Lin, Ting-Zhu Wu, Zhong Chen and Yi-Jun Lu

IEEE Trans. Instrum. Meas., 2021, 70, 1
DOI: 10.1109/TIM.2021.3094627

Deterioration of near-UV GaN-based LEDs in seawater vapour

Yi Tai Chen, Bo Hong Lin, Ssu Han Lu, Zi Wei Li, Yu Sheng Tsai, Tai Ping Sun, YewChung Sermon Wu and Hsiang Chen

Results in Physics, 2020, 19, 103432
DOI: 10.1016/j.rinp.2020.103432

Recent progress in III-nitride nanosheets: properties, materials and applications

Kefeng Wu, Siyu Huang, Wenliang Wang and Guoqiang Li

Semicond. Sci. Technol., 2021, 36, 123002
DOI: 10.1088/1361-6641/ac2c26

Nanowire Template Assisted Epitaxy of Ultrawide Bandgap III-Nitrides on Si: Role of the Nanowire Template

Qihua Zhang, Jenaes Sivasundarampillai, Heemal Parimoo and Songrui Zhao

ACS Appl. Opt. Mater., 2023, 1, 652
DOI: 10.1021/acsaom.3c00023

High quality GaN tetrapodal structures hetero-integrated on 3D Si surfaces

Youngshik Cho, Min Soo Jeon, Hanmin Jang, Heung Soo Lee and Dong Rip Kim

Applied Surface Science, 2021, 565, 150584
DOI: 10.1016/j.apsusc.2021.150584

Lead‐Free Cesium Thulium Halide Perovskite Microcrystals for Near Ultraviolet Luminescence

Chuanli Wu, Xiaofei Qing, Wenwei Lai and Xiuxun Han

Small, 2023, 19
DOI: 10.1002/smll.202300538

Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties

Ali Olkun, Hüseyin Kaan Kaplan, Sertan Kemal Akay, Serhat Sarsici and Nursev Erdoğan

Materials Letters, 2024, 376, 137276
DOI: 10.1016/j.matlet.2024.137276

Enhancement of Short-Circuit Current Density in Superlattice-Based InGaN/GaN Solar Cells

Heng-sheng Shan, Yi-fan Song, Xiao-ya Li, Cheng-ke Li, Ming-hui Li and Hong-tao Jiang

ECS J. Solid State Sci. Technol., 2023, 12, 095004
DOI: 10.1149/2162-8777/acfbb7

A Comprehensive Review of Group-III Nitride Light-Emitting Diodes: From Millimeter to Micro-Nanometer Scales

Xinye Fan, Jiawang Shi, Yiren Chen, Guoqing Miao, Hong Jiang and Hang Song

Micromachines, 2024, 15, 1188
DOI: 10.3390/mi15101188

Highly efficient near ultraviolet LEDs using InGaN/GaN/AlxGa1-xN/GaN multiple quantum wells at high temperature on sapphire substrate

Mohd Ann Amirul Zulffiqal Md Sahar, Zainuriah Hassan, Sha Shiong Ng and Nur Atiqah Hamzah

Materials Science in Semiconductor Processing, 2023, 156, 107298
DOI: 10.1016/j.mssp.2022.107298

Enhancing luminescence in bio-cellulose derived carbon microcoils through europium incorporation: A pathway to high-performance UV luminophores

Zhijun Wang, Yijia Li, Zhongyun Ma, Hao Liu, Hao Chen, Peng He, Qi Liu and Feng Tao

Industrial Crops and Products, 2024, 222, 119959
DOI: 10.1016/j.indcrop.2024.119959

Sensitivity of indium molar fraction in InGaN quantum wells for near-UV light-emitting diodes

Muhammad Nawaz Sharif, Qamar Wali, Hameed ur Rehman, Zhongqiu Xing, Sajid Ullah Khan, Aoxiang Zhang, Ilkay Demir, Fang Wang and Yuhuai Liu

Micro and Nanostructures, 2022, 165, 207208
DOI: 10.1016/j.micrna.2022.207208

Novel staggered quantum well design and in-surfactant GaN buffer layer in UVA light emitting diode heterostructures

Nor Syafiqah Azmi, Muhammad Shahrul Nizam Suri, Noratiqah Yusop, Mohd Ann Amirul Zulffiqal Md Sahar, Mohd Anas Ahmad, Muhamad Ikram Md Taib, Mohd Nazri Abd Rahman, Muhammad Iznul Hisyam, Tan Swee Tiam, Ahmad Fakhrurrazi Ahmad Noorden, Mohammad Amirul Hairol Aman and Norzaini Zainal

Optical Materials, 2025, 162, 116934
DOI: 10.1016/j.optmat.2025.116934

A Review of Light-Emitting Diodes and Ultraviolet Light-Emitting Diodes and Their Applications

Trailokya Bhattarai, Abasifreke Ebong and Mohammad Raja

Photonics, 2024, 11, 491
DOI: 10.3390/photonics11060491

Strain‐Engineered Monolithic Multi‐Band LEDs for Simultaneous Short‐Wavelength and Mid‐Wavelength Infrared Emission

Hee Joon Jung, Dongwan Kim, Phuc Dinh Nguyen, Sangjun Kang, Jiyeon Jeon, Thu Trang Thi Bui, Jungwon Yoon, Minkyeong Kim, Changsug Lee, Robert Sinclair, In‐Ho Lee, Byong Sun Chun and Sang Jun Lee

Advanced Materials, 2026, 38
DOI: 10.1002/adma.202508332

Recent advances in the molecular designs of near ultraviolet emitters for efficient organic light emitting diodes

P. Keerthika, Ankit Kumar, Arthanareeswari Maruthapillai, Venkatramaiah Nutalapati and Rajendra Kumar Konidena

Journal of Photochemistry and Photobiology C: Photochemistry Reviews, 2025, 63, 100698
DOI: 10.1016/j.jphotochemrev.2025.100698

Leakage of holes induced by Si doping in the AlGaN first barrier layer in GaN/AlGaN multiple-quantum-well ultraviolet light-emitting diodes

Wei Liu, Shiwei Yuan and Xiaoya Fan

Journal of Luminescence, 2021, 231, 117806
DOI: 10.1016/j.jlumin.2020.117806

A review on GaN-based two-terminal devices grown on Si substrates

Yu Zhang, Chao Liu, Min Zhu, Yuliang Zhang and Xinbo Zou

Journal of Alloys and Compounds, 2021, 869, 159214
DOI: 10.1016/j.jallcom.2021.159214

Overcoming Asymmetric Carrier Injection in III-Nitride Light-Emitting Diodes through Defect Engineering

Yuxin Yang, Zhiming Shi, Shunpeng Lv, Hang Zang, Xiaobao Ma, Feng Zhang, Yan Yu, Peng Han, Ke Jiang, Xiaolan Yan, Su-Huai Wei, Xiaojuan Sun and Dabing Li

Phys. Rev. Lett., 2025, 135
DOI: 10.1103/kt15-x472

Enhanced size-dependent efficiency of InGaN/AlGaN near-ultraviolet micro-LEDs

Abu Bashar Mohammad Hamidul Islam, Tae Kyoung Kim, Yu-Jung Cha, Joosun Yun, June-O Song, Dong-Soo Shin, Jong-In Shim and Joon Seop Kwak

Applied Physics Letters, 2025, 126
DOI: 10.1063/5.0237557

Narrow-band n-GaN/n-Si isotype heterojunction photodiode: A simplified approach for photodiode development

Ali Olkun, Hüseyin Kaan Kaplan, Sertan Kemal Akay, Muhitdin Ahmetoğlu, Suat Pat and Nursev Erdoğan

Sensors and Actuators A: Physical, 2024, 374, 115466
DOI: 10.1016/j.sna.2024.115466

Quantum Efficiency Improvement of InGaN Near Ultraviolet LED Design by Genetic Algorithm

İrem ALP, Bilgehan Barış ÖNER, Esra EROĞLU and Yasemin ÇİFTCİ

Sakarya University Journal of Science, 2023, 27, 94
DOI: 10.16984/saufenbilder.1051252

Engineering the Bandgap and Surface Structure of CsPbCl3 Nanocrystals to Achieve Efficient Ultraviolet Luminescence

Yunqin Zhang, Xiyue Cheng, Datao Tu, Zhongliang Gong, Renfu Li, Yingjie Yang, Wei Zheng, Jin Xu, Shuiquan Deng and Xueyuan Chen

Angewandte Chemie, 2021, 133, 9779
DOI: 10.1002/ange.202017370

Designing p-region of AlGaN ultraviolet light-emitting diodes for the improved performance

Saad Rasheed, Muhammad Usman, Shazma Ali, Laraib Mustafa and Hamid Ali

Physica B: Condensed Matter, 2023, 659, 414865
DOI: 10.1016/j.physb.2023.414865

Adsorption properties of Al, Ga, and N related particles on GaN substrate surface by first principle calculations

Libin Zhang, Jiacheng Zhou, Bo Yang, Chengjun Zhang, Ting Qi, Yuqin Wu, Zhiyin Gan, Sheng Liu and Longchao Cao

Journal of Crystal Growth, 2022, 598, 126857
DOI: 10.1016/j.jcrysgro.2022.126857