Highly stable two-dimensional Ruddlesden–Popper perovskite-based resistive switching memory devices

Abstract

Resistive switching random-access memory (ReRAM) devices based on organic–inorganic halide perovskites (OIHPs) have emerged as a new class of data storage devices. Recently, two-dimensional (2D) OIHPs have attracted much attention for ReRAM applications because of their structural diversity and superior stability. Here, the RS characteristics of ReRAM devices fabricated utilizing pure 2D Ruddlesden–Popper (RP) perovskite crystals, namely (TEA)₂PbBr₄ and (TEA)₂PbI₄, are reported. The RS memory devices exhibit reliable and reproducible bipolar switching properties with high ON/OFF ratio (∼10⁴), excellent data retention of over 10⁴ s, and good endurance characteristics of 200 cycles. This study investigates temperature-dependent RS behaviors, elucidating the creation and annihilation of a conducting pathway in the presence of an external electric field. Additionally, the RS property of 2D RP perovskite-based memory devices is found to be retained over 45 days at ambient conditions under a relative humidity of 47% ± 4%. Our findings may accelerate the technological deployment of stable 2D perovskite-based RS memory devices for successful logic application.