Atomic layer deposition of oxide semiconductor thin films for transistor applications: a review

Inhong Hwang, Minki Choe, Dahui Jeon and In-Hwan Baek

J. Mater. Chem. C, 2024, 12, 18167
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Advancements and hurdles in contact engineering for miniaturized sub-micrometer oxide semiconductor devices

Joo Hee Jeong, Jeong Eun Oh, Dongseon Kim, Daewon Ha and Jae Kyeong Jeong

J. Mater. Chem. C, 2025, 13, 4861
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Recent progress in HfO2-based ferroelectric devices with oxide semiconductor channels: a comprehensive review

He Young Kang, Yun Ho Shin, Da Eun Kim, Dae Woong Kwon and Jae Kyeong Jeong

Nanoscale Adv., 2026
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Design of an Atomic Layer-Deposited In2O3/Ga2O3 Channel Structure for High-Performance Thin-Film Transistors

Jae Seok Hur, Joo Hee Jeong, Gwang-Bok Kim, Seong Hun Yoon, Jihyun Koh, Bong Jin Kuh and Jae Kyeong Jeong

ACS Appl. Mater. Interfaces, 2025, 17, 6541
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Optimizing the crystallinity of ZrO2 gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control

Hanseok Jeong, Soo Min Yoo, Minki Choe, In-Hwan Baek and Woojin Jeon

Sci Rep, 2025, 15
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Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory

Sang Won Chung, Seong Hun Yoon and Jae Kyeong Jeong

Commun Eng, 2026, 5
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The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs

Hongwei Tang, Dennis Lin, Subhali Subhechha, Adrian Chasin, Daisuke Matsubayashi, Michiel van Setten, Yiqun Wan, Harold Dekkers, Jie Li, Shruthi Subramanian, Zhuo Chen, Nouredine Rassoul, Yuchao Jiang, Jan Van Houdt, Valeri Afanas'Ev, Gouri Sankar Kar and Attilio Belmonte

IEEE Electron Device Lett., 2025, 46, 761
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Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors

Hoon Hahn Yoon, Jin Young Park, Yonas Tsegaye Megra, Ju Hwan Baek, Minuk Song, Deji Akinwande, Daewon Ha, Dong-Ho Kang and Hyeon-Jin Shin

npj 2D Mater Appl, 2025, 9
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Optimization of Atomic-Layer-Deposited Zinc–Tin-Oxide Thin-Film Transistors via Controlled Aluminum Doping

Jinheon Choi, Juneseong Choi, Yonghee Lee, Sukin Kang, Sahngik Aaron Mun, Jaewon Ham, Hyungjeung Kim, Shihyun Kim, Subin Moon and Cheol Seong Hwang

ACS Appl. Electron. Mater., 2025, 7, 5184
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Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges

Chi-Hoon Lee, Seong-Hwan Ryu, Taewon Hwang, Sang-Hyun Kim, Yoon-Seo Kim and Jin-Seong Park

Nano-Micro Lett., 2026, 18
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200-period Si/Si0.8Ge0.2 superlattice structure growth and characterization for vertical stacked DRAM

Xiaomeng Liu, Xiangsheng Wang, Xinhe Wang, Fan Yang, Hailing Wang, Yanpeng Song, Xinyou Liu, Ying Zhang, Han Wang, Wenhao Zhang, Zhenzhen Kong, Zhaoqiang Bai, Guilei Wang and Chao Zhao

Applied Physics Letters, 2025, 126
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Unraveling the Impact of Cation Composition on Atomic Layer Deposited Ultrathin In–Sn–O Field-Effect Transistors

Soojin Park, Gwang-Bok Kim, Jiwon Chae, Daewon Ha and Jae Kyeong Jeong

IEEE Trans. Electron Devices, 2025, 72, 6765
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Gate-Dielectric Engineering with an Ultrathin Silicon Oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories

Fabia F. Athena, Jonathan Hartanto, Matthias Passlack, Jack C. Evans, Jimmy Qin, Didem Dede, Koustav Jana, Shuhan Liu, Tara Peña, Eric Pop, Greg Pitner, Iuliana P. Radu, Paul C. McIntyre and H.-S. Philip Wong

Nano Lett., 2026
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High-Mobility IZO Thin-Film Transistors Enabled by Precise Hydrogen Control Using a SiO2–Al2O3 Supercycle via Plasma-Enhanced Atomic Layer Deposition

Sunghwan Park, Seong-In Cho, Hwa Young Kim, Sang-Hee Ko Park and Jong Beom Ko

ACS Appl. Mater. Interfaces, 2025, 17, 66801
DOI: 10.1021/acsami.5c12926

Investigation of Chlorine-Induced Damage in Oxide Semiconductor Transistors

Jae Won Na, Seungbin Lee, Hyeonhong Min, Gwanghyeon Jang, Minseop Song, I. Sak Lee, Jong-Heon Yang, Min Jung Kim, Kwun-Bum Chung and Si Joon Kim

ACS Appl. Electron. Mater., 2025, 7, 6128
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Tailoring Crystal Growth via Sn Incorporation for High-Performance ALD IGO FETs

Gwang-Bok Kim, Joo Hee Jeong, Soojin Park, Sunghyun Choi, Jiseong An, Kwangmin Park and Jae Kyeong Jeong

IEEE Electron Device Lett., 2025, 46, 1781
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Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications

Min Seok Kim, Sang Ho Lee, Jin Park, Seung Ji Bae, Jeong Woo Hong, Won Suk Koh, Gang San Yun, Jaewon Jang, Jin-Hyuk Bae and In Man Kang

Discover Nano, 2025, 20
DOI: 10.1186/s11671-025-04201-1