Resistive switching of the HfOx/HfO2 bilayer heterostructure and its transmission characteristics as a synapse

Tingting Tan, Yihang Du, Ai Cao, Yaling Sun, Hua Zhang and Gangqiang Zha

RSC Adv., 2018, 8, 41884
DOI: 10.1039/C8RA06230G

Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure

Jinshi Zhao, Ming Zhang, Shangfei Wan, Zhengchun Yang and Cheol Seong Hwang

ACS Appl. Mater. Interfaces, 2018, 10, 1828
DOI: 10.1021/acsami.7b16214

Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaOx Film

Yuting Chen, Yu Yan, Jianwen Wu, Chen Wang, Jun Ye Lin, Jin Shi Zhao and Cheol Seong Hwang

ACS Appl. Mater. Interfaces, 2020, 12, 10681
DOI: 10.1021/acsami.9b22687

The effect of high resistivity AlOδ layer on low-power consumption of TaOx based resistive switching memory

Jin Shi Zhao, Chen Wang, Yu Yan, Yu Ting Chen, Wen Tao Sun, Jun Ye Li, Xiang Yu Wang, Wei Mi, Dian You Song and Li Wei Zhou

Vacuum, 2020, 174, 109186
DOI: 10.1016/j.vacuum.2020.109186

Performance enhancement of TaOx resistive switching memory using graded oxygen content

B. Wang, K. H. Xue, H. J. Sun, Z. N. Li, W. Wu, P. Yan, N. Liu, B. Y. Tian, X. X. Liu and X. S. Miao

Applied Physics Letters, 2018, 113
DOI: 10.1063/1.5048098

A hardware friendly unsupervised memristive neural network with weight sharing mechanism

Zhiri Tang, Ruohua Zhu, Peng Lin, Jin He, Hao Wang, Qijun Huang, Sheng Chang and Qiming Ma

Neurocomputing, 2019, 332, 193
DOI: 10.1016/j.neucom.2018.12.049

Boolean and Sequential Logic in a One‐Memristor‐One‐Resistor (1M1R) Structure for In‐Memory Computing

Ya‐Xiong Zhou, Yi Li, Nian Duan, Zhuo‐Rui Wang, Ke Lu, Miao‐Miao Jin, Long Cheng, Si‐Yu Hu, Ting‐Chang Chang, Hua‐Jun Sun, Kan‐Hao Xue and Xiang‐Shui Miao

Adv Elect Materials, 2018, 4
DOI: 10.1002/aelm.201800229

Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application

Shuang Gao, Gang Liu, Qilai Chen, Wuhong Xue, Huali Yang, Jie Shang, Bin Chen, Fei Zeng, Cheng Song, Feng Pan and Run-Wei Li

ACS Appl. Mater. Interfaces, 2018, 10, 6453
DOI: 10.1021/acsami.7b19586

Bilayer Ohmic Electrode Engineering in TaOX ReRAM Devices

Godwin Paul, Tom Glint, Stephan Menzel and Vikas Rana

IEEE Electron Device Lett., 2025, 46, 1537
DOI: 10.1109/LED.2025.3585469

Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices

Tao Wan, Bo Qu, Haiwei Du, Xi Lin, Qianru Lin, Da-Wei Wang, Claudio Cazorla, Sean Li, Sidong Liu and Dewei Chu

Journal of Colloid and Interface Science, 2018, 512, 767
DOI: 10.1016/j.jcis.2017.10.113

Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfOx Devices

Wenxi Li, Fang Wang, Jingwei Zhang, Chuang Li, Junqing Wei, Jiaqiang Shen, Xin Shan, Tianling Ren, Jinshi Zhao, Zhitang Song and Kailiang Zhang

Physica Status Solidi (a), 2019, 216
DOI: 10.1002/pssa.201900555

Anatomy of filamentary threshold switching in amorphous niobium oxide

Shuai Li, Xinjun Liu, Sanjoy Kumar Nandi and Robert Glen Elliman

Nanotechnology, 2018, 29, 375705
DOI: 10.1088/1361-6528/aacee4

Generating randomness: making the most out of disordering a false order into a real one

Yaron Ilan

J Transl Med, 2019, 17
DOI: 10.1186/s12967-019-1798-2

Enhanced reliability through regulation of electrode resistance in indium tin oxide/HfO /TiN resistive memories

Chuang Li, Wenxi Li, Fang Wang, Jingwei Zhang, Jingsi Sun, Jiaqiang Shen, Kai Hu, Jinshi Zhao and Kailiang Zhang

Materials Science in Semiconductor Processing, 2020, 116, 105103
DOI: 10.1016/j.mssp.2020.105103

Reconfigurable and Efficient Implementation of 16 Boolean Logics and Full‐Adder Functions with Memristor Crossbar for Beyond von Neumann In‐Memory Computing

Yujie Song, Xingsheng Wang, Qiwen Wu, Fan Yang, Chengxu Wang, Meiqing Wang and Xiangshui Miao

Advanced Science, 2022, 9
DOI: 10.1002/advs.202200036

Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing

Muhammad Ismail, Umesh Chand, Chandreswar Mahata, Jamel Nebhen and Sungjun Kim

Journal of Materials Science & Technology, 2022, 96, 94
DOI: 10.1016/j.jmst.2021.04.025

Fully “Erase-free” Multi-Bit Operation in HfO2-Based Resistive Switching Device

Jin Joo Ryu, Kanghyeok Jeon, Seungmin Yeo, Geonhee Lee, Chunjoong Kim and Gun Hwan Kim

ACS Appl. Mater. Interfaces, 2019, 11, 8234
DOI: 10.1021/acsami.8b20035

Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption

Jinshi Zhao, Shuqin Guo, Jiacheng Li, Yingchen Li and Liwei Zhou

Applied Physics Letters, 2021, 118
DOI: 10.1063/5.0036730

Enhanced performance of self-selective RRAM devices in V/TaOx/Pt structure

Haoyu Xu, Hongli Sun, He Liu, Chenming Dong, Chunbo Li, Wei Mi, Di Wang, Linan He, Liwei Zhou and Jinshi Zhao

J. Phys. D: Appl. Phys., 2025, 58, 075104
DOI: 10.1088/1361-6463/ad9934

Controlling the thin interfacial buffer layer for improving the reliability of the Ta/Ta2O5/Pt resistive switching memory

Yichuan Wang, Yu Yan, Chen Wang, Yuting Chen, Junye Li, Jinshi Zhao and Cheol Seong Hwang

Applied Physics Letters, 2018, 113
DOI: 10.1063/1.5040430

Influence of electrolyte selection on performance of tantalum anodic oxide memristors

Ivana Zrinski, Alexey Minenkov, Cezarina Cela Mardare, Jan Philipp Kollender, Shaukat Ali Lone, Achim Walter Hassel and Andrei Ionut Mardare

Applied Surface Science, 2021, 565, 150608
DOI: 10.1016/j.apsusc.2021.150608

Self-compliance characteristics and switching degradation in TaO x -based memristors

Mingrui Jiang, Biao Wang, Kan-Hao Xue, Nian Liu, Huajun Sun, Hong Lu and Xiangshui Miao

Appl. Phys. Express, 2019, 12, 104003
DOI: 10.7567/1882-0786/ab42d0

Role and optimization of thermal rapid annealing in Ta/TaOx/Ru based resistive switching memory

Jinshi Zhao, Yingchen Li, Jiacheng Li and Liwei Zhou

Vacuum, 2021, 191, 110392
DOI: 10.1016/j.vacuum.2021.110392

Flexible Ta/TiO x /TaO x /Ru memristive synaptic devices on polyimide substrates

Jiacheng Li, Chenyang Hao, Shuqin Guo, Yingchen Li, Jiuzhou Ren, Liwei Zhou and Jinshi Zhao

Nanotechnology, 2021, 32, 335205
DOI: 10.1088/1361-6528/ac00e0