Recent progress on MnBi2Te4 epitaxial thin films as a platform for realising quantum anomalous Hall effect

Abstract

Since the first realisation of the quantum anomalous Hall effect (QAHE) in a dilute magnetic doped topological insulator thin film in 2013, the quantisation temperature has been limited to less than 1 K due to magnetic disorder in dilute magnetic systems. With magnetic moments ordered into the crystal lattice, the intrinsic magnetic topological insulator MnBi₂Te₄ has the potential to eliminate or significantly reduce magnetic disorder, and improve the quantisation temperature. Surprisingly, to date, the QAHE has yet to be observed in molecular beam epitaxy (MBE)-grown MnBi₂Te₄ thin films at zero magnetic field, and what leads to the difficulty in quantisation remains a mystery. Although bulk MnBi₂Te₄ and exfoliated flakes have been well studied, revealing both the QAH effect and axion insulator phases, experimental progress on MBE thin films has been slower. Understanding how the breakdown of QAHE occurs in MnBi₂Te₄ thin films and finding solutions that will enable mass-producing millimetre-size QAHE devices operating at elevated temperatures is required. In this mini-review, we will summarise recent studies on the electronic and magnetic properties of MBE MnBi₂Te₄ thin films and discuss mechanisms that could explain the failure of QAHE from the aspects of defects, electronic structure, magnetic order, and consequences of their delicate interplay. Finally, we propose several strategies for realising QAHE at elevated temperatures in MnBi₂Te₄ thin films.