Electrostatic modulation of thermoelectric transport properties of 2H-MoTe2

Abstract

Two-dimensional layered transition metal dichalcogenides are potential thermoelectric candidates with application in on-chip integrated nanoscale cooling and power generation. Here, we report a comprehensive experimental and theoretical study on the in-plane thermoelectric transport properties of thin 2H-MoTe₂ flakes prepared in field-effect transistor geometry to enable electrostatic gating and modulation of the electronic properties. The thermoelectric power factor is enhanced by up to 45% using electrostatic modulation. The in-plane thermal conductivity of 9.8 ± 3.7 W m⁻¹ K⁻¹ is measured using the heat diffusion imaging method in a 25 nm thick flake. First-principles calculations are used to obtain the electronic band structure, phonon band dispersion, and electron–phonon scattering rates. The experimental electronic properties are in agreement with theoretical results obtained within energy-dependent relaxation time approximation. The thermal conductivity is evaluated using both the relaxation time approximation and the full iterative solution to the phonon Boltzmann transport equation. This study establishes a framework to quantitively compare first-principle-based calculations with experiments in 2D layered materials.