Issue 48, 2021

Thermal atomic layer deposition of rhenium nitride and rhenium metal thin films using methyltrioxorhenium

Abstract

The growth of rhenium nitride and rhenium metal thin films is presented using atomic layer deposition (ALD) with the precursors methyltrioxorhenium and 1,1-dimethylhydrazine. Saturative, self-limiting growth was determined at 340 °C for pulse times of ≥4.0 s for methyltrioxorhenium and ≥0.1 s for 1,1-dimethylhydrazine. An ALD window was observed from 340 to 350 °C with a growth rate of about 0.60 Å per cycle. Films grown at 340 °C revealed a root mean square surface roughness of 2.7 nm for a 70 nm thick film and possessed a composition of ReN0.14 with low O and C content of 1.6 and 2.6 at%, respectively. Enhanced nucleation on in situ grown TiN, relative to thermal SiO2, enabled a conformality of 98% on high aspect ratio trenched structures. Subjecting the ReN0.14 thin films to thermal or chemical and thermal treatments reduced the nitrogen content to ≤1.6 at%, yielding a film purity of about 96 at% rhenium and resistivities as low as 51 μΩ cm. The Re metal film thicknesses on the trenched structures remained intact during the post-deposition annealing treatments and the films did not delaminate from the substrate surfaces.

Graphical abstract: Thermal atomic layer deposition of rhenium nitride and rhenium metal thin films using methyltrioxorhenium

Supplementary files

Article information

Article type
Paper
Submitted
13 okt 2021
Accepted
24 nov 2021
First published
24 nov 2021

Dalton Trans., 2021,50, 18202-18211

Author version available

Thermal atomic layer deposition of rhenium nitride and rhenium metal thin films using methyltrioxorhenium

S. Cwik, K. N. Woods, S. S. Perera, M. J. Saly, T. J. Knisley and C. H. Winter, Dalton Trans., 2021, 50, 18202 DOI: 10.1039/D1DT03454E

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