Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga2SSe monolayer

Baisheng Sa, Xiaotian Shen, Shuchang Cai, Zhou Cui, Rui Xiong, Chao Xu, Cuilian Wen and Bo Wu

Phys. Chem. Chem. Phys., 2022, 24, 15376
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Single-layer HfN2: symmetric scaling behavior in CMOS transistors

Xianghe Liu and Yuliang Mao

J. Mater. Chem. C, 2025, 13, 16628
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Promising ultra-short channel transistors based on OM2S (M = Ga, In) monolayers for high performance and low power consumption

Xueping Li, Peize Yuan, Lin Li, Ting Liu, Chenhai Shen, Yurong Jiang, Xiaohui Song, Jingbo Li and Congxin Xia

Nanoscale, 2023, 15, 356
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Quantum transport simulation of α-GeTe ferroelectric semiconductor transistors

Qiang Li, Zongmeng Yang, Xingyue Yang, Wenjing Zhou, Chen Yang, Xiaotian Sun, Shibo Fang and Jing Lu

J. Mater. Chem. C, 2025, 13, 568
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Sub-5 nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs

Xiao-Lu Duan, Yan-Dong Guo, Ye-Wei Chen, Yue Jiang, Hao-Ran Hu, Man-Jun Jiang, Xing-Yu Ma, Jie-Ling Hu, Cheng-Biao Lin, Fan Guo, Hong-Li Zeng and Xiao-Hong Yan

Nanoscale, 2026, 18, 6470
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Performance improvements in All-2D Te field effect transistor with layer-engineered homojunction using sputtering deposition

Min Jeong Kim, Ojun Kwon, Seyoung Oh, Eunjeong Cho, Wondeok Seo, Yeongeun Kwon, Shinhoi Kim, Minhee Kim, Kyungmin Lee, Minyoung Choi, Ah Ra Kim, Jongwon Yoon, Woojin Park and Byungjin Cho

Materials Science in Semiconductor Processing, 2026, 206, 110443
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Ab initio quantum transport simulations of the sub-5 nm gate-length two-dimensional β-CuI transistors for advanced nanoelectronics

Mudasser Husain, Younas Ahmed, Xingyue Yang, Zongmeng Yang, Jiahui Li, Jichao Dong, Linqiang Xu, Nasir Rahman, Shibo Fang and Jing Lu

Materials Today Nano, 2026, 33, 100774
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Bilayer GaN nanosheet: a potential transistor channel for next decade

Qiang Hu, Hong Li, Fengbin Liu and Jing Lu

Physics Letters A, 2025, 563, 131077
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Quantum transport simulation of 2D B4Cl4 in 5.0 nm node flexible MOSFETs

Zhanhai Li, Zhenhua Zhang, Shengde Liang and Xun Wang

Journal of Science: Advanced Materials and Devices, 2026, 11, 101104
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Designing sub-5 nm monolayer AlP MOSFETs

W.A. Abdul-Hussein, Falah H. Hanoon and Lafy F. Al-Badry

Micro and Nanostructures, 2023, 176, 207524
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Review on silicon carbide cutting technology

Jiayi Yue, Shujuan Li, Feilong Liu, Zhen Jia and Haitao Shi

J Mech Sci Technol, 2026
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SiX2 (X = S, Se) Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications

Saichao Yan, Kang Wang, Zhixin Guo, Yu-Ning Wu and Shiyou Chen

Nano Lett., 2024, 24, 6158
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Photodetector Based on Elemental Ferroelectric Black Phosphorus-like Bismuth

Qiang Li, Shibo Fang, Xingyue Yang, Zongmeng Yang, Qiuhui Li, Wenjing Zhou, Dahua Ren, Xiaotian Sun and Jing Lu

ACS Appl. Mater. Interfaces, 2024, 16, 63786
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Sub-5-nm Monolayer GaSe MOSFET with Ultralow Subthreshold Swing and High On -State Current: Dielectric Layer Effects

Xueping Li, Peize Yuan, Lin Li, Mengjie He, Jingbo Li and Congxin Xia

Phys. Rev. Applied, 2022, 18
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Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications

Linqiang Xu, Lianqiang Xu, Jun Lan, Yida Li, Qiuhui Li, Aili Wang, Ying Guo, Yee Sin Ang, Ruge Quhe and Jing Lu

ACS Appl. Mater. Interfaces, 2024
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Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices

Linqiang Xu, Lianqiang Xu, Qiuhui Li, Shibo Fang, Ying Li, Ying Guo, Aili Wang, Ruge Quhe, Yee Sin Ang and Jing Lu

ACS Appl. Electron. Mater., 2024, 6, 426
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Monolayer WS2 Sub-5 nm Transistor for Future Technology Nodes: A Theoretical Study

Xiaotian Sun, Shibo Fang, Ge Zhang, Linqiang Xu, Yee Sin Ang, Shujing Zhu, Qiang Li, Xingyue Yang, Zongmeng Yang, Junfeng Li, Weizhou Wang, Zhigang Song and Jing Lu

ACS Appl. Nano Mater., 2025, 8, 12594
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Combined effects of BET and PF on the mechanism and material removal in alkaline chemical mechanical polishing of InP

Qingzhu Zhang, Ming Sun, Wenwen Zheng, Jun Zheng and Yuewei Hu

Materials Science in Semiconductor Processing, 2026, 210, 110666
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Monolayer WSi2N4 : A promising channel material for sub-5-nm-gate homogeneous CMOS devices

Ying Li, Chunyu Qi, Xun Zhou, Linqiang Xu, Qiuhui Li, Shiming Liu, Chen Yang, Shiqi Liu, Lin Xu, Jichao Dong, Shibo Fang, Zongmong Yang, Yifan Chen, Xiaotian Sun and Jing Lu

Phys. Rev. Applied, 2023, 20
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Theoretical study of sub-5nm monolayer LiAlO2 field-effect transistor: Effects of underlap structure and high temperature

Yi Xiang, Le-Jun Wang, Hong-Lin Ma, Lei Hu, Zhi-Qiang Fan and Chun-Ming Yang

Vacuum, 2026, 246, 115028
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Investigation of thermal stress effects on subthreshold conduction in nanoscale p-FinFET from Multiphysics perspective

Huali Duan, Erping Li, Qinyi Huang, Da Li, Zhufei Chu, Jian Wang and Wenchao Chen

Journal of Applied Physics, 2024, 135
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High-throughput computational screening of two-dimensional oxides for high-performance electronic and optoelectronic devices

Zongmeng Yang, Xingyue Yang, Qiang Li, Qiuhui Li, Jichao Dong, Ying Li, Lay Kee Ang, Yee Sin Ang, Shibo Fang and Jing Lu

Phys. Rev. Applied, 2025, 24
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Scaling limits of monolayer AlN and GaN MOSFETs

Hong Li, Yuhang Liu, Shuai Sun, Fengbin Liu and Jing Lu

Applied Surface Science, 2023, 634, 157613
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High-performance and energy-efficient monolayer GaTe MOSFETs for advanced semiconductor devices

Jia-Yi Li, Xia-Fei Lei, Yong Zhang, Shi-Zhang Chen, Jing Feng, Xi Wu, Bo Chen and Feng Ning

Results in Physics, 2025, 79, 108519
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Ab initio quantum transport simulation of low-power and high-performance MOSFETs based on monolayer platinum diselenide

Hong Li, Jiahui Li, Shuai Sun, Fengbin Liu and Jing Lu

Surfaces and Interfaces, 2025, 73, 107550
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Sub-5-nm Monolayer Boron Pnictide MOSFETs for n - and p -Type High-Performance Applications

Hong Li, Yuhang Liu, Fengbin Liu and Jing Lu

Phys. Rev. Applied, 2023, 20
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Ultra-high on-current in two-dimensional Tl2O TFETs with tunneling width modulation

Chuyao Chen, Jialin Yang, Wenhan Zhou, Xuemin Hu, Tingting Guo and Shengli Zhang

Sci. China Mater., 2024, 67, 1661
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N - and P -type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors

Qiuhui Li, Tao Zheng, Lin Xu, Shibo Fang, Zongmeng Yang, Linqiang Xu, Ying Li, Baochun Wu, Xingyue Yang, Ruge Quhe, Guo Ying and Jing Lu

Phys. Rev. Materials, 2024, 8
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Self-Oriented Polycrystalline InP Nanowires Guided by Nanogrooves and Their Near-Infrared Photoresponse

Pinyun Ren, Zheyu Wang, Xiangtao Chen, Yujie Wang, Jing Wu, Wenhan Du, Qianying Zheng, Xianpei Ren and Jinyou Xu

Crystal Growth & Design, 2025, 25, 2456
DOI: 10.1021/acs.cgd.4c01686