Open Access Article
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Correction: Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface
Shouzhi
Xi
ab,
Wanqi
Jie
*ab,
Gangqiang
Zha
*ab,
Yanyan
Yuan
a,
Tao
Wang
ab,
Wenhua
Zhang
c,
Junfa
Zhu
c,
Lingyan
Xu
ab,
Yadong
Xu
ab,
Jie
Su
a,
Hao
Zhang
ab,
Yaxu
Gu
ab,
Jiawei
Li
a,
Jie
Ren
ab and
Qinghua
Zhao
ab
aState Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. E-mail: jwq@nwpu.edu.cn; zha_gq@nwpu.edu.cn
bKey Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, China
cNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
First published on 27th January 2016
Abstract
Correction for ‘Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
Due to a calculation error, the authors would like to replace Fig. 5 in the original article with the revised version shown below:
 | ||
| Fig. 5 Evolution of Te 4d and As 3d core levels from GaAs, CdTe, As–Te, and Ga–Te reactions at CdTe/GaAs heterointerface for various CdTe thicknesses measured by SRPES, obtained at normal emission with a photon energy of 90 eV. Black line: experiment results. Purple line: results of the best fit. Fitted with As 3d from GaAs (blue line), As 3d from Te–As reaction (gray line), Te 4d from CdTe (green line), and Te 4d from Ga–Te reaction (red line) components. | ||
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