Issue 3, 2024

Recent progress on defect-engineering in ferroelectric HfO2: The next step forward via multiscale structural optimization

Abstract

The discovery of unconventional scale-free ferroelectricity in HfO2-based fluorite thin films has attracted great attention in recent years for their promising applications in low-power logic and nonvolatile memories. The ferroelectricity of HfO2 is intrinsically originated from the widely accepted ferroelectric metastable orthorhombic Pca21 phase. In the last decade, defect-doping/solid solution has shown excellent prospects in enhancing and stabilizing the ferroelectricity via isovalent or aliovalent defect-engineering. Here, the recent advances in defect-engineered HfO2-based ferroelectrics are first reviewed, including progress in mono-ionic doping and mixed ion-doping. Then, the defect-lattice correlation, the point-defect promoted phase transition kinetics, and the interface-engineered dynamic behaviour of oxygen vacancy are summarized. In addition, thin film preparation and ion bombardment doping are summarized. Finally, the outlook and challenges are discussed. A multiscale structural optimization approach is suggested for further property optimization. This article not only covers an overview of the state-of-art advances of defects in fluorite ferroelectrics, but also future prospects that may inspire their further property-optimization via defect-engineering.

Graphical abstract: Recent progress on defect-engineering in ferroelectric HfO2: The next step forward via multiscale structural optimization

Article information

Article type
Review Article
Submitted
10 ago. 2023
Accepted
22 nov. 2023
First published
29 nov. 2023

Mater. Horiz., 2024,11, 626-645

Recent progress on defect-engineering in ferroelectric HfO2: The next step forward via multiscale structural optimization

F. Yan, Y. Wu, Y. Liu, P. Ai, S. Liu, S. Deng, K. Xue, Q. Fu and W. Dong, Mater. Horiz., 2024, 11, 626 DOI: 10.1039/D3MH01273E

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