Issue 22, 2016

2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics

Abstract

The remarkable properties of graphene have inspired great research interest in two-dimensional layered materials (2DLMs) with novel electronic and optical attributes. As a class of graphene-like 2DLMs, ultrathin group IIIA metal chalcogenides (GIIIAMCs, metal = In, Ga; chalcogen = S, Se, Te) have shown great potential in electronics and optoelectronics. In this review, we first introduce the crystal structures and their unique advantages in specific potential applications. Then, we summarize the progress in the fabrication of GIIIAMCs in the framework of top-down and bottom-up methods. Next, their recent achievements regarding enhanced field-effect transistor and photodetector applications are discussed in detail. In addition, the construction strategies of hybrid GIIIAMCs heterostructures and their applications in electronics and optoelectronics are presented. Finally, this review is concluded with some perspectives and an outlook for continued research.

Graphical abstract: 2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics

Article information

Article type
Highlight
Submitted
10 oct. 2015
Accepted
13 nov. 2015
First published
16 nov. 2015

CrystEngComm, 2016,18, 3968-3984

2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics

W. Huang, L. Gan, H. Li, Y. Ma and T. Zhai, CrystEngComm, 2016, 18, 3968 DOI: 10.1039/C5CE01986A

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