Issue 18, 2023

Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices

Abstract

A one-step, simple, scalable, reproducible, low-temperature, and in situ solvothermal deposition method has been established for the growth of Sb2S3 on FTO using [Sb{S2P{O(Pr)2}3] as a single source precursor without a binding agent. XRD, Raman, SAED, and HRTEM results revealed the crystalline orthorhombic stibnite phase. The sheaf-like Sb2S3 exhibited a band gap energy of 1.72 eV. The Sb2S3 film is uniform and well-adhered and is further developed as a novel resistive random-access memory material. The Ag/Sb2S3/FTO memristive device demonstrated low operating voltage and the performance of the device over multiple cycles revealed dependable bipolar resistive switching behaviour and an ON/OFF ratio of ca. 10.

Graphical abstract: Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices

Supplementary files

Article information

Article type
Paper
Submitted
01 may. 2023
Accepted
01 ago. 2023
First published
16 ago. 2023
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2023,4, 4119-4128

Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices

S. S. Harke, T. Zhang, R. Huang and C. Gurnani, Mater. Adv., 2023, 4, 4119 DOI: 10.1039/D3MA00205E

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