Themed collection Spotlight Collection: Atomic and Molecular Layer Deposition
Liquid atomic layer deposition as emergent technology for the fabrication of thin films
Liquid atomic layer deposition (LALD) has emerged as a complementary technology of atomic layer deposition (ALD) to help overcome some of the challenges currently faced from working in the gas-phase.
The chemistry of guanidinate complexes of the platinum group metals
In the present Perspective article, synthetic and structural aspects, reactivity studies and applications of platinum group metal complexes containing guanidinate ligands are discussed.
Effect of different oxide and hybrid precursors on MOF-CVD of ZIF-8 films
Vapor-phase fabrication of the metal–organic framework ZIF-8 through the conversion of precursors prepared by physical, atomic, and molecular layer deposition.
Synthesis of volatile, reactive coinage metal 5,5-bicyclic amidinates with enhanced thermal stability for chemical vapor deposition
Coinage metal bicyclic amidinates for chemical vapor deposition.
Water Vapor and Hydrogen Gas Diffusion Barrier Characteristics of Al2O3-Alucone Multi-layer Structures for Flexible OLED Display Applications
Atomic/molecular layer deposition of Ni-terephthalate thin films
Highly-stable PEN as gas-barrier substrate for flexible displays via atomic layer infiltration
Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine
Amorphous AlN films grown from TMA and MMH were obtained and investigated. The amount of impurities varied from 3 to 9 at% for carbon, and 4 to 12 at% for oxygen. The values of mechanical characteristics were ∼14 GPa (hardness) and ∼164 GPa (Young's modulus).
Highly conductive and stable Co9S8 thin films by atomic layer deposition: from process development and film characterization to selective and epitaxial growth
A new ALD process using easily synthesized CoCl2(TMEDA) and H2S enables deposition of ultrathin, highly conductive and thermally stable Co9S8 films selectively on SiO2 without growth on Si–H.
HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition
The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.
Quinizarin: a large aromatic molecule well suited for atomic layer deposition
Quinizarin is a well-suited molecule for obtaining strongly colored materials by atomic layer deposition.
About the importance of purge time in molecular layer deposition of alucone films
In MLD of alucone using trimethylaluminum (TMA) and ethylene glycol (EG), TMA is known to infiltrate into the MLD film taking very long to outgas. An insufficient purge can then lead to an additional CVD component in the overall growth.
Multi-metal coordination polymers grown through hybrid molecular layer deposition
Ternary coordination polymers deposited by hybrid molecular layer deposition (MLD) techniques are of interest as highly conformal, functional materials.
Novel hierarchical CuNiAl LDH nanotubes with excellent peroxidase-like activity for wide-range detection of glucose
Novel hierarchical CuNiAl layered double hydroxide (CuNiAl LDH) nanotubes were prepared with the help of atomic layer deposition (ALD) method and exhibited excellent peroxidase mimicking property.
A new metalorganic chemical vapor deposition process for MoS2 with a 1,4-diazabutadienyl stabilized molybdenum precursor and elemental sulfur
Crystalline MoS2 thin films are deposited via MOCVD using a new molybdenum precursor, 1,4-di-tert-butyl-1,4-diazabutadienyl-bis(tert-butylimido)molybdenum(VI) [Mo(NtBu)2(tBu2DAD)], and elemental sulfur.
Understanding KOtBu in atomic layer deposition – in situ mechanistic studies of the KNbO3 growth process
Providing a deeper understanding of alkali metal-containing ternary processes in ALD by in situ FT-IR and QCM mechanistic studies.
Composition-tuned metal–organic thin-film structures based on photoswitchable azobenzene by ALD/MLD
We demonstrate the fabrication of in-situ crystalline thin films of various azobenzene (AZO) based photoresponsive metal–organic structures using the atomic/molecular layer deposition (ALD/MLD) technique.
Molecular layer deposited alucone thin films from long-chain organic precursors: from brittle to ductile mechanical characteristics
We tailor mechanical properties of molecular-layer-deposited inorganic–organic films through control over the organic precursor length, relevant for battery applications.
First principles study of reactions in alucone growth: the role of the organic precursor
First principles investigation of the molecular mechanism of the growth of hybrid organic–inorganic thin films of aluminium alkoxides, known as “alucones”.
Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition
Novel zinc precursors were designed, synthesized and used for the deposition of ZnO thin films by ALD.
Homogeneous Fe2O3 coatings on carbon nanotube structures for supercapacitors
The combination of carbon nanotubes with transition metal oxides can exhibit complementary charge storage properties for use as electrode materials for next generation energy storage devices.
Atomic/molecular layer deposition and electrochemical performance of dilithium 2-aminoterephthalate
Crystalline Li-terephthalate and amino-functionalized Li-terephthalate thin film electrodes are fabricated from gaseous precursors with ALD/MLD to show that the electron-donating amino group lowers the redox potential.
Mesoporous ZnO thin films obtained from molecular layer deposited “zincones”
The synthesis of MLD-derived mesoporous ZnO with 20% of porosity is demonstrated and studied by advanced in situ characterization techniques.
Improving photoelectrochemical response of ZnO nanowire arrays by coating with p-type ZnO-resembling metal–organic framework
Superior photoelectrochemical performance of zinc oxide nanowire arrays is achieved by compactly coating MOF zinc glycolate with p-type conductivity.
On the role of micro-porosity in affecting the environmental stability of atomic/molecular layer deposited (ZnO)a(Zn–O–C6H4–O)b films
Correlation between the porosity and environmental stability of Zn-based hybrid multilayer films is studied by means of ellipsometric porosimetry.
Aluminum dihydride complexes and their unexpected application in atomic layer deposition of titanium carbonitride films
Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD).
The transformation behaviour of “alucones”, deposited by molecular layer deposition, in nanoporous Al2O3 layers
Wet and heat treatments of different alucones result in porous alumina with tuneable porosity and pore size.
About this collection
Atomic layer deposition (ALD) has been the fastest growing thin-film technology in the semiconductor industry for the last few decades, and is applied in photovoltaics systems and displays. The industrial applications naturally concern only few prototype materials (Al2O3, HfO2, ZnO, TiO2, etc.). However, in recent years the technique has been increasingly exploited towards new application domains and new materials, driving a continued demand for new precursors.
Molecular layer deposition (MLD) is a much less exploited counterpart of ALD for purely organic thin films. Particularly interesting though is the combination of ALD and MLD for hybrid inorganic-organic materials. This combined ALD/MLD technique was introduced in 2008 and it is now strongly emerging for various new MOF-like metal-organic materials and inorganic-organic multilayer structures which are believed to open up novel application possibilities.
This collection is guest edited by Dalton Transactions Associate Editor Prof. Maarit Karppinen (Aalto University) alongside Prof. Anjana Devi (Ruhr-University) and Prof. Jolien Dendooven (Ghent University)
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